Mixed arsenic(III) bis(dimethyldithiocarbamato) derivatives with some oxygen and sulfur donor ligands

Cr2S3(Et2DTC) complex and [Cr2S3-MoS2(Et2DTC)] bilayer thin films: single source stationed fabrication, compositional, optical, microstructural and electrochemical investigation

Current investigation has for the first time synthesized chromium sulphide diethyldithiocarbamate [Cr₂S₃(Et₂DTC)] complex utilizing diethyldithiocarbamate (DDTC) utilizing single source precursor method. Thin films of bilayer chromium sulphide diethyldithiocarmate and molybdenum disulphide [Cr₂S₃-MoS₂(Et₂DTC)] were deposited on the fluorine doped tin oxide (FTO) substrate by physical vapour deposition (PVD). Synthesized complex and bilayer were characterized by Xray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectrophotometry (UV-Vis), and scanning electron microscopy (SEM) for exploration of the compositional, optical, crystalline and morphological parameters, respectively. FT-IR peaks expressed the chelation of [Cr₂S₃(Et₂DTC)] expressing interactions between chromium sulphide and the ligand. The band gaps obtained from Tauc plot were 3.89 (direct) and 3.38 eV (indirect), respectively for Cr₂S₃(Et₂DTC) complex. The direct and indirect band gap of 3.75 and 3.35 eV, respectively, were obtained for [Cr₂S₃-MoS₂(Et₂DTC)] bilayer thin films. Average crystallite size of 13 (hexagonal orientation) and 13.4 (orthorhombic orientation) nm and for Cr₂S₃(Et₂DTC) complex and [Cr₂S₃-MoS₂(Et₂DTC)] bilayer thin films expressed from XRD. SEM micrographs expressed cannular and rod protrusions for Cr₂S₃-DDTC complex and smoother and unvarnished surficial characteristics for [Cr₂S₃-MoS₂(Et₂DTC)] bilayer thin films corresponding to compactness and uniformity of the films. Furthermore, [Cr₂S₃-MoS₂(Et₂DTC)] also expressed remarkable electrochemical aspects of the current generation and operational stability of analysed through 5760 s at 100 mA analysed via linear sweep voltammetry and chronoamperometry. The fabricated films can be efficiently used in optoelectronic devices. Current work can be extended to the optimization of bilayer thin films fabrication for achieving an alleviation in the band gaps.