Nanowire polymer transfer for enhanced solar cell performance and lower cost

SILICON-CONTAINING OLIGOMERIC AZOINITIATORS IN THE SYNTHESIS OF BLOCK COPOLYMERS

A solvothermal synthetic pathway and functional polymer styabilizers was used for synthesis of fine silver structures of different architecture. Using polyvinylpyrrolidone as a stabilizer silver micronized wires with a diameter of 3,8–4,2 μm and aspect ratio of up to 30 were prepared. XRD technique was applied for qualitative determination of silver metal structures. New thermoresponse composite hydrogels with a structure of semi-IPNs were prepared from cross-linked polyvinyl alcohol, linear highly hydrophilic poly(2-ethyl-2-oxazoline) (PEtOx) and as-synthesized silver micro-sized wires. Effect of a structure and a composition of the polymer matrix, and inorganic anisotropic filler on structure arrangement of composite hydrogels were evaluated by DMA studies. A presence of linear hydrophilic PEtOx and anisotropic metal filler in PVA matrix reduces storage modulus Е’ from 275 to 222–230 MPa and increases loss modulus Е” up to 45,5 MPa at room temperature measurements that partially initiated by poor structuration ability of the composites under high solvation level of polymer matrices. Increasing temperature leads to redistribution of hydrogen bonds network and hybridization of PVA nad PEtOx macrochains and enhances energy dissipation ability of unfilled hydrogel. A filler due to conjugation with amine-functionalized PEtOx chains and its localization closed to a surface of metal supresses polymer-polymer interactions and elasticity parameters of composite matrix drops down. As a result, diffusion and permeability coefficients of composite hydrogels reaches 1,06–1,52·10–9 cm2/s and 0,83–1,09·10-9 g/(cm·s), respectively, that higher in comparison with cross-linked PVA matrices. A presence of hydrogen bonds of different energy in hydrogels provides an appearance of multiple relaxation transitions due to different macrochain mobility in a bulk of polymer matrix. Differences of temperature interval of LCTS for hydrogels were found from analysis Е”(T)/dT (62–70 °С) and Δχ(T)/dT (67–70 °С) dependencies are interrelated with kinetic pecularities of diffusion processes that are able to suppress a phase separation at the temperatures closed to LCTS. Phase inversion processes for hydrogel containing 5 % of PEtOx at LCTS are accompanied by desorption of 32–73 % of sorbate. Moreover, thermoresponsive properties of the hydrogels filled with metallic silver wires are higher than that of the unfilled semi-IPNs.

Boosting Power Conversion Efficiency of Quantum Dot-Sensitized Solar Cells by Integrating Concentrating Photovoltaic Concept with Double Photoanodes

Despite great efforts dedicated to enhance power conversion efficiency (PCE) of quantum dot-sensitized solar cells (QDSSCs) in the past two decades, the efficiency of QDSSCs is still far behind its theoretical value. The present approaches for improving PCE are mainly focused on tailoring the bandgap of QDs to broadening light-harvesting and optimizing interfaces of component parts. Herein, a new solar cell architecture is proposed by integrating concentrating solar cell (CPV) concept into QDSSCs with double photoanode design. The Cu2S mesh is used as a counter electrode and sandwiched between two photoanodes. This designed battery structure can increase the PCE by 260% compared with a single photoanode. With the most extensively used CdS/CdSe QD sensitizers, a champion PCE of 8.28% (Voc = 0.629 V, Jsc = 32.247 mA cm-2) was achieved. This is mainly due to the increase in Jsc due to the double photoanode design and adoption of the CPV concept. In addition, another reason is that concentrated sunshine illumination induced a photothermal effect, accelerating the preceding chemical reactions associated with the conversion of polysulfide species. The cell fabrication and design reported here provides a new insight for further development of QDSSCs.

Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse

We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H₂O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells.

Synthesis and Applications of III-V Nanowires

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.