Hydrogen Sensing Properties of Thin NiO Films Deposited by RF Sputtering

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co₃O₄, and Cr₂O₃, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co₃O₄, and Cr₂O₃ thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co₃O₄, and Cr₂O₃ thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H₂, and NH₃) and oxidizing gases, such as CO₂, NO₂, and O₃, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes of Au/NiO/ZnO with a NiO interlayer prepared by radio-frequency magnetron sputtering

The rectifying characteristic of Au/ZnO Schottky diodes (SDs) was remarkably improved by introducing a NiO layer in-between the Au and ZnO layers. Compared with the Au/ZnO SDs, the introduction of the NiO layer significantly enhanced the rectification ratio from 1.38 to 1300, and reduced the ideality factor from 5.78 to 2.14. The NiO and ZnO layers were deposited on an indium-tin-oxide/glass substrate by radio-frequency magnetron sputtering. Secondary ion mass spectroscopy showed that Ni atoms diffused from NiO to ZnO, leading to a graded distribution of Ni in ZnO. X-ray diffraction demonstrated that the diffusion of Ni atoms increased the grain size and electron concentration of ZnO. X-ray photoelectron spectroscopy showed that the interstitial oxygen (O_i) atoms in NiO and ZnO compensated the oxygen vacancies (O_V) at the NiO/ZnO interface; the amount of O_V was significantly reduced, while O_i vanished at the interface. The band diagram revealed a potential drop in the bulk ZnO, owing to the graded distribution of Ni in ZnO, which accelerated the carriers, collected by the outer circuit. The carriers at the NiO/ZnO interface easily crossed over the barrier height, instead of being recombined by O_V, owing to the lower amount of O_V at the interface.