Quantifying oxygen distortions in lithium-rich transition-metal-oxide cathodes using ABF STEM

Deep sub-angstrom resolution imaging by electron ptychography with misorientation correction

Superresolution imaging of solids is essential to explore local symmetry breaking and derived material properties. Electron ptychography is one of the most promising schemes to realize superresolution imaging beyond aberration correction. However, to reach both deep sub-angstrom resolution imaging and accurate measurement of atomic structures, it is still required for the electron beam to be nearly parallel to the zone axis of crystals. Here, we report an efficient and robust method to correct the specimen misorientation in electron ptychography, giving deep sub-angstrom resolution for specimens with large misorientations. The method largely reduces the experimental difficulties of electron ptychography and paves the way for widespread applications of ptychographic deep sub-angstrom resolution imaging.

Advances and Applications of Atomic-Resolution Scanning Transmission Electron Microscopy

Although scanning transmission electron microscopy (STEM) images of individual heavy atoms were reported 50 years ago, the applications of atomic-resolution STEM imaging became wide spread only after the practical realization of aberration correctors on field-emission STEM/TEM instruments to form sub-Ångstrom electron probes. The innovative designs and advances of electron optical systems, the fundamental understanding of electron–specimen interaction processes, and the advances in detector technology all played a major role in achieving the goal of atomic-resolution STEM imaging of practical materials. It is clear that tremendous advances in computer technology and electronics, image acquisition and processing algorithms, image simulations, and precision machining synergistically made atomic-resolution STEM imaging routinely accessible. It is anticipated that further hardware/software development is needed to achieve three-dimensional atomic-resolution STEM imaging with single-atom chemical sensitivity, even for electron-beam-sensitive materials. Artificial intelligence, machine learning, and big-data science are expected to significantly enhance the impact of STEM and associated techniques on many research fields such as materials science and engineering, quantum and nanoscale science, physics and chemistry, and biology and medicine. This review focuses on advances of STEM imaging from the invention of the field-emission electron gun to the realization of aberration-corrected and monochromated atomic-resolution STEM and its broad applications.

Ultra-high contrast STEM imaging for segmented/pixelated detectors by maximizing the signal-to-noise ratio

Atomic-resolution low-dose imaging for beam-sensitive materials is one of the most challenging topics in electron microscopy research. In this study, we theoretically developed a new scanning transmission electron microscopy (STEM) imaging technique by maximizing the signal-to-noise ratio of an obtainable image under the weak phase object approximation (WPOA), which we will call optimum bright-field (OBF) imaging. OBF images are obtained by processing multiple images acquired by segmented/pixelated detectors through complex frequency filtering. This method has been confirmed through a systematic image simulation to be highly dose-efficient. Furthermore, we experimentally demonstrate the high dose efficiency of the OBF technique by visualizing the atomic structure in a lithium-ion battery material using a high-speed segmented detector. Furthermore, it was shown that OBF imaging is usable for real-time imaging, which makes low-dose observations of beam-sensitive materials much easier to achieve.