Beam displacement and blur caused by fast electron beam deflection

Fast imaging of millimeter-scale areas with beam deflection transmission electron microscopy

Serial section transmission electron microscopy (TEM) has proven to be one of the leading methods for millimeter-scale 3D imaging of brain tissues at nanoscale resolution. It is important to further improve imaging efficiency to acquire larger and more brain volumes. We report here a threefold increase in the speed of TEM by using a beam deflecting mechanism to enable highly efficient acquisition of multiple image tiles (nine) for each motion of the mechanical stage. For millimeter-scale areas, the duty cycle of imaging doubles to more than 30%, yielding a net average imaging rate of 0.3 gigapixels per second. If fully utilized, an array of four beam deflection TEMs should be capable of imaging a dataset of cubic millimeter scale in five weeks.

Cathodoluminescence Nanoscopy: State of the Art and Beyond

Cathodoluminescence (CL) nanoscopy is proven to be a powerful tool to explore nanoscale optical properties, whereby free electron beams achieve a spatial resolution far beyond the diffraction limit of light. With developed methods for the control of electron beams and the collection of light, the dimension of information that CL can access has been expanded to include polarization, momentum, and time, holding promise to provide invaluable insights into the study of materials and optical near-field dynamics. With a focus on the burgeoning field of CL nanoscopy, this perspective outlines the recent advancements and applications of this technique, as illustrated by the salient experimental works. In addition, as an outlook for future research, several appealing directions that may bring about developments and discoveries are highlighted.

Continuous illumination picosecond imaging using a delay line detector in a transmission electron microscope

Progress towards analysing transitions between steady states demands improvements in time-resolved imaging, both for fundamental research and for applications in information technology. Transmission electron microscopy is a powerful technique for investigating the atomic structure, chemical composition and electromagnetic properties of materials with high spatial resolution and precision. However, the extraction of information about dynamic processes in the ps time regime is often not possible without extensive modification to the instrument while requiring careful control of the operation conditions to not compromise the beam quality. Here, we avoid these drawbacks by combining a delay line detector with continuous illumination in a transmission electron microscope. We visualize the gyration of a magnetic vortex core in real space and show that magnetization dynamics up to frequencies of 2.3 GHz can be resolved with down to ∼122ps temporal resolution by studying the interaction of an electron beam with a microwave magnetic field. In the future, this approach promises to provide access to resonant dynamics by combining high spatial resolution with sub-ns temporal resolution.

SEM Nano: An Electron Wave Optical Simulation for the Scanning Electron Microscope

The simulation program “SEM Nano” is introduced to explain and visualize probe formation in field-emission scanning electron microscopes (SEMs). The program offers an easy and intuitive graphical user interface (GUI) to provide input in terms of understandable SEM parameters and visualization of the output. The simulations are based on wave optics treatment of the electron beam in the SEM column. Based on input parameters provided by the user, the spatial intensity distribution of electrons is calculated at the specimen by incorporating the effects of diffraction, aberrations, coherence, and noise. Given the specimen structure signal (So), the program has the capability to produce an image of the specimen using the electron probe intensity distribution. Finally, a feature is provided to reconstruct the electron probe intensity from the noisy image using a Wiener filter-based deconvolution.

Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads

In this work, we report the use of commercial gallium nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors. This was accomplished by taking advantage of the small form-factor, low-power dissipation, and high temperature compatibility of GaN field effect transistors (GaNFETs) to integrate pulsers directly into the loads to be switched, even under vacuum. This integration reduces parasitics to allow for faster switching and removes the requirement to impedance match the load to a transmission line by allowing for a lumped element approximation of the load even with subnanosecond switching. Depending on the chosen GaNFET and driver, these GaN pulsers are capable of generating pulses ranging from 100 to 650 V and 5 to 60 A in 0.25-8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by using a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. We test these circuits under vacuum and up to 120 °C to demonstrate their flexibility. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.