Source shot noise mitigation in focused ion beam microscopy by time-resolved measurement

Shot noise-mitigated secondary electron imaging with ion count-aided microscopy

Modern science is dependent on imaging on the nanoscale, often achieved through processes that detect secondary electrons created by a highly focused incident charged particle beam. Multiple types of measurement noise limit the ultimate trade-off between the image quality and the incident particle dose, which can preclude useful imaging of dose-sensitive samples. Existing methods to improve image quality do not fundamentally mitigate the noise sources. Furthermore, barriers to assigning a physically meaningful scale make the images qualitative. Here, we introduce ion count-aided microscopy (ICAM), which is a quantitative imaging technique that uses statistically principled estimation of the secondary electron yield. With a readily implemented change in data collection, ICAM substantially reduces source shot noise. In helium ion microscopy, we demonstrate 3[Formula: see text] dose reduction and a good match between these empirical results and theoretical performance predictions. ICAM facilitates imaging of fragile samples and may make imaging with heavier particles more attractive.

Simultaneous secondary electron microscopy in the scanning transmission electron microscope with applications for in situ studies

Scanning/transmission electron microscopy (STEM) is a powerful characterization tool for a wide range of materials. Over the years, STEMs have been extensively used for in situ studies of structural evolution and dynamic processes. A limited number of STEM instruments are equipped with a secondary electron (SE) detector in addition to the conventional transmitted electron detectors, i.e. the bright-field (BF) and annular dark-field (ADF) detectors. Such instruments are capable of simultaneous BF-STEM, ADF-STEM and SE-STEM imaging. These methods can reveal the 'bulk' information from BF and ADF signals and the surface information from SE signals for materials <200 nm thick. This review first summarizes the field of in situ STEM research, followed by the generation of SE signals, SE-STEM instrumentation and applications of SE-STEM analysis. Combining with various in situ heating, gas reaction and mechanical testing stages based on microelectromechanical systems (MEMS), we show that simultaneous SE-STEM imaging has found applications in studying the dynamics and transient phenomena of surface reconstructions, exsolution of catalysts, lunar and planetary materials and mechanical properties of 2D thin films. Finally, we provide an outlook on the potential advancements in SE-STEM from the perspective of sample-related factors, instrument-related factors and data acquisition and processing.

Figuring Method of High Convergence Ratio for Pulsed Ion Beams Based on Frequency-Domain Parameter Control

The continuous phase plate (CPP) provides excellent beam smoothing and shaping impacts in the inertial confinement fusion application. However, due to the features of its dispersion, its surface gradient is frequently too large (>2 μm/cm) to process. When machining a large gradient surface with continuous ion beam figuring (IBF), the acceleration of the machine motion axis cannot fulfill the appropriate requirements, and the machining efficiency is further influenced by the unavoidable extra removal layer. The pulsed ion beam (PIB) discretizes the ion beam by incorporating frequency-domain parameters, resulting in a pulsed beam with a controlled pulse width and frequency and avoiding the extra removal layer. This research evaluates the processing convergence ability of IBF and PIB for the large gradient surface using simulation and experiment. The findings reveal that PIB offers obvious advantages under the same beam diameter. Compared with the convergence ratio (γ = 2.02) and residuals (RMS = 184.36 nm) of IBF, the residuals (RMS = 27.48 nm) of PIB are smaller, and the convergence ratio (γ = 8.47) is higher. This work demonstrates that PIB has better residual convergence in large gradient surface processing. It is expected to realize ion beam machining with a higher convergence ratio.

Image-histogram-based secondary electron counting to evaluate detective quantum efficiency in SEM

Scanning electron microscopy is a powerful tool for nanoscale imaging of organic and inorganic materials. An important metric for characterizing the limits of performance of these microscopes is the Detective Quantum Efficiency (DQE), which measures the fraction of emitted secondary electrons (SEs) that are detected by the SE detector. However, common techniques for measuring DQE approximate the SE emission process to be Poisson distributed, which can lead to incorrect DQE values. In this paper, we introduce a technique for measuring DQE in which we directly count the mean number of secondary electrons detected from a sample using image histograms. This technique does not assume Poisson distribution of SEs and makes it possible to accurately measure DQE for a wider range of imaging conditions. As a demonstration of our technique, we map the variation of DQE as a function of working distance in the microscope.

Source shot noise mitigation in focused ion beam microscopy by time-resolved measurement

Focused ion beam microscopy suffers from source shot noise - random variation in the number of incident ions in any fixed dwell time - along with random variation in the number of detected secondary electrons per incident ion. This multiplicity of sources of randomness increases the variance of the measurements and thus worsens the trade-off between incident ion dose and image accuracy. Repeated measurement with low dwell time, without changing the total ion dose, is a way to introduce time resolution to this form of microscopy. Through theoretical analyses and Monte Carlo simulations, we show that three ways to process time-resolved measurements result in mean-squared error (MSE) improvements compared to the conventional method of having no time resolution. In particular, maximum likelihood estimation provides reduction in MSE or reduction in required dose by a multiplicative factor approximately equal to the secondary electron yield. This improvement factor is similar to complete mitigation of source shot noise. Experiments with a helium ion microscope are consistent with the analyses and suggest accuracy improvement for a fixed source dose by a factor of about 4.