The separation of surface and bulk contributions in ELNES spectra

Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures

Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-Al₂O₃ substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks.

Planar growth of nanowire arrays involves interactions between materials that affect the electronic behavior of the effective heterojunction. Here, authors show how core curvature and cross-section morphology affect shell growth, demonstrating how strain at the core-shell interface induces electronic band modulations in ZnSe@ZnTe nanowires.

A "thickness series": weak signal extraction of ELNES in EELS spectra from surfaces

We report a new simple but effective method to extract the weak surface signals from a "thickness series" of recorded electron energy-loss spectra. Using precise thickness measurements and energy-loss near-edge structures measured at increasing thicknesses, we are able to extract the surface and bulk components in the series. The electronic structure and bonding information from SrTiO3 (001) reconstructed surfaces have been successfully obtained by applying this approach. This approach can be applied to study many other cases including absorbed monolayers and beam-sensitive interfaces.

Improvement of energy loss near edge structure calculation using Wien2k

The density functional theory (DFT) is a recognised method for the calculation of electronic properties of materials. As such it can also be used for the calculation of energy loss near edge structures. Some care has to be taken since the DFT is intended for ground state calculation. The effect of the core hole left by the excited electron is different in an insulator and in a metal and can be observed in both cases. For an insulator (MgO, Si), a supercell calculation is needed while in the case of copper, extremely good agreement with experiment can be obtained with a partial core hole calculation. In the particular case of the WIEN code (APW method) we show that calculation of low lying edges (Si L at 99eV) where the initial state is not strongly localised can only be done within the dipole approximation and with some care. Random alloys (CuNi) have been calculated previously using a supercell; we show that a particular version of the virtual crystal approximation gives promising results.