Substitution of Li for Cu in Cu2ZnSnS4: Toward Wide Band Gap Absorbers with Low Cation Disorder for Thin Film Solar Cells

Exceptional Thermoelectric Performance of Cu2(Zn,Fe,Cd)SnS4 Thin Films

High-quality Cu2(Zn,Fe,Cd)SnS4 (CZFCTS) thin films based on the parent CZTS were prepared by aerosol-assisted chemical vapor deposition (AACVD). Substitution of Zn by Fe and Cd significantly improved the electrical transport properties, and monophasic CZFCTS thin films exhibited a maximum power factor (PF) of ∼0.22 μW cm-1 K-2 at 575 K. The quality and performance of the CZFCTS thin films were further improved by postdeposition annealing. CZFCTS thin films annealed for 24 h showed a significantly enhanced maximum PF of ∼2.4 μW cm-1 K-2 at 575 K. This is higher than all reported values for single-phase quaternary sulfide (Cu2BSnS4, B = Mn, Fe, Co, Ni) thin films and even exceeds the PF for most polycrystalline bulk materials of these sulfides. Density functional theory (DFT) calculations were performed to understand the impact of Cd and Fe substitution on the electronic properties of CZTS. It was predicted that CZFCTS would have a smaller band gap than CZTS and a higher density of states (DoS) near the Fermi level. The thermal conductivity and thermoelectric figure of merit (zT) of the CZFCTS thin films have been evaluated, yielding an estimated maximum zT range of 0.18-0.69 at 550 K. The simple processing route and improved thermoelectric performance make CZFCTS thin films extremely promising for thermoelectric energy generation.

Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells

Li-alloying of Cu2ZnSn(S, Se)4 (CZTSSe) absorbers is widely accepted for its beneficial influence on the performance of CZTSSe-based thin film solar cells. Given the degraded morphology characteristic of absorbers synthesized in the presence of excess Li concentrations, it is speculated that Li may be best incorporated into the absorber after synthesis. Here, we report an innovative method to add Li to synthesized CZTSSe by an electrochemical treatment using a liquid electrolyte. Our approach decouples Li addition from absorber synthesis, allowing one to possibly overcome morphology issues associated with high Li concentration. We show that Li is thereby transferred to the absorber and is incorporated into the crystal lattice. The resulting Li concentration in the absorber can be easily controlled by the treatment parameters. Using liquid electrolytes allows a straightforward disassembly of the lithiation setup and hence the fabrication of solar cells after electrochemical treatment. Electrochemically lithiated solar cells reached power conversion efficiencies of up to 9.0%. Further optimization of this innovative method is required to reduce expected interface issues resulting from the electrochemical treatment to demonstrate a gain in the power conversion efficiency of the CZTSSe solar cells. Finally, our results indicate strong lateral Li diffusion, which deserves further investigation. Moreover, the method could be transferred to other material systems, such as Cu(In, Ga)Se2 (CIGS), and adapted to treat layers with other alkali elements such as Na.

Cu2ZnSnS4 monograin layer solar cells for flexible photovoltaic applications

Monograin powder technology is one possible path to developing sustainable, lightweight, flexible, and semi-transparent solar cells, which might be ideal for integration with various building and product elements. In recent years, the main research focus of monograin technology has centered around understanding the synthesis and optoelectronic properties of kesterite-type absorber materials. Among these, Cu2ZnSnS4 (CZTS) stands out as a promising solar cell absorber due to its favorable optical and electrical characteristics. CZTS is particularly appealing as its constituent elements are abundant and non-toxic, and it currently holds the record for highest power conversion efficiency (PCE) among emerging inorganic thin-film PV candidates. Despite its advantages, kesterite solar cells' PCE still falls significantly behind the theoretical maximum efficiency due to the large VOC deficit. This review explores various strategies aimed at improving VOC losses to enhance the overall performance of CZTS monograin layer solar cells. It was found that low-temperature post-annealing of CZTS powders reduced Cu-Zn disordering, increasing Eg by ∼100 meV and VOC values; however, achieving the optimal balance between ordered and disordered regions in kesterite materials is crucial for enhancing photovoltaic device performance due to the coexistence of ordered and disordered phases. CZTS alloying with Ag and Cd suppressed non-radiative recombination and increased short-circuit current density. Optimizing Ag content at 1% reduced CuZn antisite defects, but higher Ag levels compensated for acceptor defects, leading to reduced carrier density and decreased solar cell performance. Co-doping with Li and K resulted in an increased bandgap (1.57 eV) and improved VOC, but further optimization is required due to a relatively large difference between measured and theoretical VOC. Heterojunction modifications led to the most effective PCE improvement in CZTS-based solar cells, achieving an overall efficiency of 12.06%.

Scalable Synthesis of Selenide Solid-State Electrolytes for Sodium-Ion Batteries

Solid-state sodium-ion batteries employing superionic solid-state electrolytes (SSEs) offer low manufacturing costs and improved safety and are considered to be a promising alternative to current Li-ion batteries. Solid-state electrolytes must have high chemical/electrochemical stability and superior ionic conductivity. In this work, we employed precursor and solvent engineering to design scalable and cost-efficient solution routes to produce air-stable sodium selenoantimonate (Na3SbSe4). First, a simple metathesis route is demonstrated for the production of the Sb2Se3 precursor that is subsequently used to form ternary Na3SbSe4 through two different routes: alcohol-mediated redox and alkahest amine-thiol approaches. In the former, the electrolyte was successfully synthesized in EtOH by using a similar redox solution coupled with Sb2Se3, Se, and NaOH as a basic reagent. In the alkahest approach, an amine-thiol solvent mixture is utilized for the dissolution of elemental Se and Na and further reaction with the binary precursor to obtain Na3SbSe4. Both routes produced electrolytes with room temperature ionic conductivity (∼0.2 mS cm-1) on par with reported performance from other conventional thermo-mechanical routes. These novel solution-phase approaches showcase the diversity and application of wet chemistry in producing selenide-based electrolytes for all-solid-state sodium batteries.

Sr(Ag1-x Lix )2 Se2 and [Sr3 Se2 ][(Ag1-x Lix )2 Se2 ] Tunable Direct Band Gap Semiconductors

Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid-state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two-dimensional Sr(Ag_1-x Li_x )₂ Se₂ layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag_1-x Li_x )₂ Se₂ with x up to 0.45. In addition, a new type of intergrowth compound [Sr₃ Se₂ ][(Ag_1-x Li_x )₂ Se₂ ] was synthesized upon further reaction of Sr(Ag_1-x Li_x )₂ Se₂ with SrSe. Both Sr(Ag_1-x Li_x )₂ Se₂ and [Sr₃ Se₂ ][(Ag_1-x Li_x )₂ Se₂ ] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag_1-x Li_x )₂ Se₂ can be precisely tuned via fine-tuning x that is controlled by only the flux ratio and temperature.

Mercurial possibilities: determining site distributions in Cu2HgSnS4 using 63/65Cu, 119Sn, and 199Hg solid-state NMR spectroscopy

Chalcogenides are an important class of materials that exhibit tailorable optoelectronic properties accessible through chemical modification. For example, the minerals kesterite, stannite, and velikite (Cu₂MSnS₄, where M = Zn, Cd, or Hg, respectively) are a series of Group 12 transition metal tin sulfides that readily exhibit optical bandgaps spanning the Shockley-Queisser limit; however, achieving consensus on their structure (space group I4̄ vs. I4̄2m) has been difficult. This study explores the average long-range and local structure of Cu₂HgSnS₄ and evaluates the parallels of M = Zn and Cd sister compounds using complementary X-ray diffraction and solid-state nuclear magnetic resonance (NMR) spectroscopy. The ^63/65Cu NMR spectra were acquired at multiple magnetic field strengths (B₀ = 7.05, 11.75, and 21.1 T) to assess the unique chemical shift anisotropy and quadrupolar coupling contributions. They reveal two inequivalent sets of Cu sites in Cu₂ZnSnS₄, in contrast to only one set of sites in Cu₂CdSnS₄ and Cu₂HgSnS₄, clarifying structural assignments previously proposed through X-ray diffraction methods. The presence of these Cu sites was further supported by DFT calculations. The ¹¹⁹Sn and ¹⁹⁹Hg NMR spectra suggest that an ordering phenomenon takes place in Cu₂HgSnS₄ when it undergoes annealing treatments. The trend in measured optical band gaps (1.5 eV for Cu₂ZnSnS₄, 1.2 eV for Cu₂CdSnS₄, and 0.9 eV for Cu₂HgSnS₄) was confirmed by electronic structure calculations, which show that the band gap narrows as the difference in electronegativity is diminished and that Hg-S bonds in Cu₂HgSnS₄ have greater covalent character.

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

In the last few decades, the attention of scientific community has been driven toward the research on renewable energies. In particular, the photovoltaic (PV) thin-film technology has been widely explored to provide suitable candidates as top cells for tandem architectures, with the purpose of enhancing current PV efficiencies. One of the most studied absorbers, made of earth-abundant elements, is kesterite Cu₂ZnSnS₄ (CZTS), showing a high absorption coefficient and a band gap around 1.4-1.5 eV. In particular, thanks to the ease of band-gap tuning by partial/total substitution of one or more of its elements, the high-band-gap kesterite derivatives have drawn a lot of attention aiming to find the perfect partner as a top absorber to couple with silicon in tandem solar cells (especially in a four-terminal architecture). In this work, we report the effects of the substitution of tin with different amounts of germanium in CZTS-based solar cells produced with an extremely simple sol-gel process, demonstrating how it is possible to fine-tune the band gap of the absorber and change its chemical-physical properties in this way. The precursor solution was directly drop-cast onto the substrate and spread with the aid of a film applicator, followed by a few minutes of gelation and annealing in an inert atmosphere. The desired crystalline phase was obtained without the aid of external sulfur sources as the precursor solution contained thiourea as well as metal acetates responsible for the in situ coordination and thus the correct networking of the metal centers. The addition of KCl in dopant amounts to the precursor solution allowed the formation of well-grown compact grains and enhanced the material quality. The materials obtained with the optimized procedure were characterized in depth through different techniques, and they showed very good properties in terms of purity, compactness, and grain size. Moreover, solar-cell prototypes were produced and measured, exhibiting poor charge extraction due to heavy back-contact sulfurization as studied in depth and experimentally demonstrated through Kelvin probe force microscopy.

Enhancing the Areal Capacity and Stability of Cu2ZnSnS4 Anode Materials by Carbon Coating: Mechanistic and Structural Studies During Lithiation and Delithiation

The widespread use of energy storage technologies has created a high demand for the development of novel anode materials in Li-ion batteries (LIBs) with high areal capacity and faster electron-transfer kinetics. In this work, carbon-coated Cu₂ZnSnS₄ with a hierarchical 3D structure (CZTS@C) is used as an anode material for LIBs. The CZTS@C microstructures with enhanced electrical conductivity and improved Li-ion diffusivity exhibit high areal and gravimetric capacities of 2.45 mA h/cm² and 1366 mA h/g, respectively. The areal capacity achieved in the present study is higher than that of previously reported CZTS-based materials. Moreover, in situ X-ray diffraction results show that lithium ions are stored in CZTS through the insertion reaction, followed by the alloying and conversion reactions at ∼1 V. The structural evolution of Li₂S and Cu-Sn/Cu-Zn alloy phases occurs during the conversion and alloying reactions. The present work provides a cost-effective and simple method to prepare bulk CZTS and highlights the conformal carbon coating over CZTS, which can enhance the electrical and ionic conductivities of CZTS materials and increase the mass loading (1-2.3 mg/cm²). The improved stability and rate capability of CZTS@C anode materials can therefore be achieved.

Cubic Crystal Structure Formation and Optical Properties within the Ag-BII-MIV-X (BII = Sr, Pb; MIV = Si, Ge, Sn; X = S, Se) Family of Semiconductors

Quaternary chalcogenide semiconductors are promising materials for energy conversion and nonlinear optical applications, with properties tunable primarily by varying the elemental composition and crystal structure. Here, we first analyze the connections among several cubic crystal structure types, as well as the orthorhombic Ag₂PbGeS₄-type structure, reported for select members within the Ag-B^II-M^IV-X (B^II = Sr, Pb; M^IV = Si, Ge, Sn; X = S, Se) compositional space. Focusing on the Ag-Pb-Si-S and Ag-Sr-Sn-S systems, we show that one structure type, with the formulas Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, is favored. We have prepared powder and single-crystal samples of Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, showing that each takes on the noncentrosymmetric cubic space group I4̅3d and is isostructural to the previously reported compound Ag₂Sr₃Ge₂Se₈. Through hybrid density functional theory calculations, these cubic compounds are demonstrated to be (quasi-)direct band gap semiconductors with high densities of states at the band maxima. The band-gap energies are measured by reflectance spectroscopy as 1.95(3) and 2.66(4) eV for Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, respectively. We further measure the optical properties and show the electronic band structures of three other isostructural A^I-B^II-M^IV-X-type materials, i.e., Ag₂Sr₃Si₂S₈, Ag₂Sr₃Ge₂S₈, and Ag₂Sr₃Ge₂Se₈, showing that the band gaps can be predictably tuned by element substitution. Detailed visual analyses of the different structures and of their relationships with other members of the Ag-B^II-M^IV-X compositional family provide a basis for a broader understanding of the structure formation and optoelectronic properties within the quaternary chalcogenide semiconductor family.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Electronics of Anion Hot Injection-Synthesized Te-Functionalized Kesterite Nanomaterial

Metal chalcogenides such as copper zinc tin sulfide (CZTS) have been intensively studied as potential photovoltaic cell materials, but their viability have been marred by crystal defects and low open circuit potential (V_oc) deficit, which affected their energy conversion efficiency. Strategies to improve on the properties of this material such as alloying with other elements have been explored and have yielded promising results. Here, we report the synthesis of CZTS and the partial substitution of S with Te via anion hot injection synthesis method to form a solid solution of a novel kesterite nanomaterial, namely, copper zinc tin sulfide telluride (CZTSTe). Particle-size analyzed via small angle X-ray scattering spectroscopy (SAXS) confirmed that CZTS and CZTSTe materials are nanostructured. Crystal planes values of 112, 200, 220 and 312 corresponding to the kesterite phase with tetragonal modification were revealed by the X-ray diffraction (XRD) spectroscopic analysis of CZTS and CZTSTe. The Raman spectroscopy confirmed the shifts at 281 cm⁻¹ and 347 cm⁻¹ for CZTS, and 124 cm⁻¹, 149 cm⁻¹ and 318 cm⁻¹ for CZTSTe. High degradation rate and the production of hot electrons are very detrimental to the lifespan of photovoltaic cell (PVC) devices, and thus it is important to have PVC absorber layer materials that are thermally stable. Thermogravimetric analysis (TGA) analysis indicated a 10% improvement in the thermal stability of CZTSTe compared to CZTS at 650 °C. With improved electrical conductivity, low charge transfer resistance (R_ct) and absorption in the visible region with a low bandgap energy (E_g) of 1.54 eV, the novel CZTSTe nanomaterials displayed favorable properties for photovoltaics application.

Liquid phase assisted grain growth in Cu2ZnSnS4 nanoparticle thin films by alkali element incorporation

We present a route where organic ligand-free, KCl-functionalized Cu₂ZnSnS₄ nanoparticles grow into large, dense grains during annealing in nitrogen/sulfur atmosphere.

New Insight of Li-Doped Cu2ZnSn(S,Se)4 Thin Films: Li-Induced Na Diffusion from Soda Lime Glass by a Cation-Exchange Reaction

In our recent report (ACS Appl. Mater. Interfaces 2016, 8, 5308), Li⁺ ions had been successfully incorporated into the lattice of the selenized Cu₂ZnSn(S,Se)₄ thin film on a quartz substrate by substituting equivalent Cu⁺ ions, and Li⁺ ions was also found to have the little effect on the crystal growth and defect passivation. To further improve the cell performance of Li-doped CZTSSe devices, we conducted the same experiments on the sodium-rich soda-lime glass (SLG) substrate in this study, instead of sodium-free quartz substrate. Surprisingly, only trace amounts of Li (Li/Cu molar ratio ∼1 × 10^-4) were detected in the final CZTSSe thin films; meanwhile, a large amount of sodium was present on the surface and at the grain boundaries of the selenized thin films. A Li/Na exchange mechanism is used to explain this phenomenon. Only on the sodium-free substrate can Li⁺ ions enter the CZTSSe host lattice, and doping Li⁺ ions on the SLG substrate are nearly identical to doping Na⁺ ions.