Crystal Growth of Intermetallics from the Joint Flux: Exploratory Synthesis through the Control of Valence Electron Count

Intermetallic Compound Re2Ga9Ge with Re- and Ge-Embedded Gallium Clusters: Synthesis, Crystal Structure, Chemical Bonding, and Physical Properties

Transition metal-based endohedral cluster intermetallic compounds are interesting electron phases, which frequently exhibit superconductivity with a peculiar interplay between the critical temperature and valence electron count. We present a new Re-based endohedral gallium cluster compound, Re₂Ga₉Ge. Its unique crystal structure (P4₂/mmc space group, a = 8.0452(3) Å, c = 6.7132(2) Å) is built by two types of gallium polyhedra: monocapped Archimedean antiprisms centered by rhenium atoms and tetrahedra containing a main-group element inside. The analysis of chemical bonding shows the presence of localized pairwise interactions between the p-block elements and the formation of multicenter bonds with the participation of d-orbitals of rhenium. In the electronic band structure, the Fermi level is located in a narrow pseudogap indicating the optimum band filling and thus explaining the virtual absence of a homogeneity range. The compound exhibits Pauli paramagnetism and metallic properties with unexpectedly low thermal conductivity. A sharp anomaly observed on the magnetic susceptibility and resistivity curves presumably indicates the electronic phase transition accompanied by charge ordering at the characteristic temperature of T * = 271 K in zero magnetic field.

Endohedral cluster intermetallic superconductors: at the frontier between chemistry and physics

When a transition metal combines with an excess of a p-metal, the latter forms endohedral clusters with the number of vertices up to 14. These clusters are the building units of endohedral cluster intermetallic compounds. Although discovered a few decades ago, they have gained renewed interest due to their peculiar crystal and electronic structures and frequently observed superconducting properties. Advances over recent years reveal that endohedral cluster architectures are flexible enough, enabling chemical substitutions and the formation of a series of structurally related phases, where the same clusters can be arranged in different ways. Within the structural series, the superconducting-state parameters, including critical temperature and magnetic field, can be controlled and finely tuned. Herein, we present the most recent results in the chemical properties and superconductivity of endohedral cluster intermetallics and provide an outlook for the field.

Semiconducting and superconducting Mo–Ga frameworks: total energy and chemical bonding

The superconducting Mo₄Ga₂₁ structure type is derived from the electron-precise MoGa₄ cubic framework.

Micro-Scale Device-An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials: The Case of Semiconducting TaGeIr

An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase-TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts.

Endohedral Cluster Superconductors in the Mo-Ga-Sn System Explored by the Joint Flux Technique

Endohedral Ga cluster compounds feature nontrivial superconducting states including the two-gap superconductivity similar in nature to MgB₂. We use the joint flux synthetic technique to introduce Sn into the Ga matrix and tune the valence electron count in the two new endohedral cluster superconductors Mo₈Ga_41-xSn_x and Mo₄Ga_21-x-δSn_x with critical temperatures of T_c = 8.7 and 5.85 K, respectively. While the former compound is a derivative of the previously known Mo₈Ga₄₁ superconductor, where Sn atoms are enclosed inside the Sn@Ga₆ octahedral clusters, the latter is a new architecture built upon Mo@Ga₉Sn clusters, Ga@Ga₁₂ cuboctahedra, and Sn₄ squares. We show that this novel Mo₄Ga_21-x-δSn_x superconductor features strong electron-phonon coupling with the large ratio of 2Δ(0)/(k_BT_c) = 4.1 similar to that of the Mo₈Ga₄₁ superconductor with the closely related crystal structure.

From endohedral cluster superconductors to approximant phases: synthesis, crystal and electronic structure, and physical properties of Mo8Ga41-xZnx and Mo7Ga52-xZnx

Using the crystal-growth joint flux technique based on the combination of two aliovalent low-melt metals, gallium and zinc, we adjust the gross valence electron count in the Mo-Ga-Zn system and produce the Mo₈Ga_41-xZn_x and Mo₇Ga_52-xZn_x intermetallic compounds. Gradual reduction in the valence electron count first leads to the Zn for Ga substitution in the Mo₈Ga₄₁ endohedral cluster superconductor, accompanied by the formation of Zn-containing clusters in the crystal structure and by the gradual suppression of superconductivity. Mo₈Ga_41-xZn_x with x = 7.2(2) exhibits superconducting properties below T_C = 4 K, whereas there is no superconducting transition at temperatures above 2 K for the limiting composition of x = 11.3(2). Further, the Mo₇Ga_52-xZn_x phase is formed from the flux with a higher content of Zn. Mo₇Ga_52-xZn_x crystallizes in the Mo₇Sn₁₂Zn₄₀ structure type with a narrow homogeneity range and exhibits metallic behavior with no sign of superconductivity down to at least 1.8 K. Its experimental valence electron count of 2.9 e per atom is below that of endohedral gallium cluster superconductors. Electronic structures of Mo₈Ga_41-xZn_x and Mo₇Ga_52-xZn_x feature the opening of a pseudogap slightly below the Fermi level indicating the specific stability of these structure types at the valence electron count of 3.2 e per atom and 2.7 e per atom, respectively.

ReGaGe2: an intermetallic compound with semiconducting properties and localized bonding

ReGaGe2 is a new member of the family of intermetallic compounds with non-metallic properties. It displays highly localized covalent bonding patterns. Its electronic structure is governed by mixing of Re d orbitals with the s and p orbitals of Ga and Ge and features the Fermi level falling into the opened band gap, ensuring experimentally confirmed semiconducting properties.