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Wang Z, Dong X, Tang W, Wang ZL. Contact-electro-catalysis (CEC). Chem Soc Rev 2024; 53:4349-4373. [PMID: 38619095 DOI: 10.1039/d3cs00736g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Contact-electro-catalysis (CEC) is an emerging field that utilizes electron transfer occurring at the liquid-solid and even liquid-liquid interfaces because of the contact-electrification effect to stimulate redox reactions. The energy source of CEC is external mechanical stimuli, and solids to be used are generally organic as well as in-organic materials even though they are chemically inert. CEC has rapidly garnered extensive attention and demonstrated its potential for both mechanistic research and practical applications of mechanocatalysis. This review aims to elucidate the fundamental principle, prominent features, and applications of CEC by compiling and analyzing the recent developments. In detail, the theoretical foundation for CEC, the methods for improving CEC, and the unique advantages of CEC have been discussed. Furthermore, we outline a roadmap for future research and development of CEC. We hope that this review will stimulate extensive studies in the chemistry community for investigating the CEC, a catalytic process in nature.
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Affiliation(s)
- Ziming Wang
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100140, China.
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuanli Dong
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100140, China.
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wei Tang
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100140, China.
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100140, China.
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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Li T, Peiris CR, Aragonès AC, Hurtado C, Kicic A, Ciampi S, MacGregor M, Darwish T, Darwish N. Terminal Deuterium Atoms Protect Silicon from Oxidation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47833-47844. [PMID: 37768872 DOI: 10.1021/acsami.3c11598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltage characteristics are more stable than those measured on Si-H surfaces. At positive voltages, the Si-D stability appears to be related to the flat band potential of Si-D being more positive compared to Si-H surfaces, making Si-D surfaces less attractive to oxidizing OH- ions. The limited oxidation of Si-D surfaces at negative potentials is interpreted by the frequencies of the Si-D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si-D excited vibrational state significantly less than that of Si-H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them.
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Affiliation(s)
- Tiexin Li
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Chandramalika R Peiris
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Albert C Aragonès
- Departament de Ciència de Materials i Química Física, Universitat de Barcelona, Marti i Franquès 1, 08028 Barcelona, Spain
- Institut de Química Teòrica i Computacional (IQTC), Universitat de Barcelona, Diagonal 645, 08028 Barcelona, Spain
| | - Carlos Hurtado
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Anthony Kicic
- Occupation, Environment and Safety, School of Population Health, Curtin University, Bentley, Western Australia 6102, Australia
- Wal-Yan Respiratory Research Centre, Telethon Kids Institute, The University of Western Australia, Nedlands, Western Australia 6009, Australia
- Department of Respiratory and Sleep Medicine, Perth Children's Hospital, Nedlands, Western Australia 6009, Australia
- Centre for Cell Therapy and Regenerative Medicine, The University of Western Australia, Nedlands, Western Australia 6009, Australia
| | - Simone Ciampi
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Melanie MacGregor
- Flinders Institute for Nanoscale Science & Technology, Flinders University, Bedford Park, South Australia 5042, Australia
| | - Tamim Darwish
- National Deuteration Facility, Australian Nuclear Science and Technology Organisation (ANSTO), New Illawarra Road, Lucas Heights, New South Wales 2234, Australia
| | - Nadim Darwish
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
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Zhang J, Lin S, Wang ZL. Triboelectric Nanogenerator Array as a Probe for In Situ Dynamic Mapping of Interface Charge Transfer at a Liquid-Solid Contacting. ACS NANO 2023; 17:1646-1652. [PMID: 36602519 DOI: 10.1021/acsnano.2c11633] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Contact between water droplets with hydrophobic surfaces is a common phenomenon at functional interfaces, and it has been extensively studied. However, quantifying the charge transfer between the liquid-solid interfacial contacting, especially for the charge density distribution throughout the movement of liquid droplet on a dielectric surface, remains to be investigated. Here, we developed a pixeled droplet triboelectric nanogenerator (pixeled droplet-TENG) array with high-density electrode array as a probe for measuring the charge transfer at a liquid-solid interface when a water drop moves on the hydrophobic surface. To intuitively observe the charge transfer between the liquid-solid interface, we "imaged" the transferred charges along movement trajectory of a water droplet as it slides along a tilted solid surface at a spatial resolution of 0.4 mm and time sensitivity of 0.02 s. Our study shows that the transferred charges are not uniformly distributed along the path, which is possibly due to the two-step model of electron transfer and ion adsorbed on the solid surface, and thus the formation of an electric double layer will inevitably shield the net surface on the solid surface. Our study presents a probe technology with potential applications in surface chemistry, physics, material science, and cell biology.
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Affiliation(s)
- Jinyang Zhang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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