Spontaneous Enhanced Visible-Light-Driven Photocatalytic Water Splitting on Novel Type-II GaSe/CN and Ga2SSe/CN vdW Heterostructures

DFT Investigation of a Direct Z-Scheme Photocatalyst for Overall Water Splitting: Janus Ga2SSe/Bi2O3 Van Der Waals Heterojunction

Constructing van der Waals heterojunctions with excellent properties has attracted considerable attention in the field of photocatalytic water splitting. In this study, four patterns, coined A, B, C, and D of Janus Ga2SSe/Bi2O3 van der Waals (vdW) heterojunctions with different stacking modes, were investigated using first-principles calculations. Their stability, electronic structure, and optical properties were analyzed in detail. Among these, patterns A and C heterojunctions demonstrate stable behavior and operate as direct Z-scheme photocatalysts, exhibiting band gaps of 1.83 eV and 1.62 eV. In addition, the suitable band edge positions make them effective for photocatalytic water decomposition. The built-in electric field across the heterojunction interface effectively inhibits electron-hole recombination, thereby improving the photocatalytic efficiency. The optical absorption coefficients show that patterns A and C heterojunctions exhibit higher light absorption intensity than Ga2SSe and Bi2O3 monolayers, spanning from the ultraviolet to visible range. Their corrected solar-to-hydrogen (STH) efficiencies are 13.60% and 12.08%, respectively. The application of hydrostatic pressure and biaxial tensile strain demonstrate distinct effects on photocatalytic performance: hydrostatic pressure preferentially enhances the hydrogen evolution reaction (HER), while biaxial tensile strain primarily improves the oxygen evolution reaction (OER). Furthermore, the heterojunctions exhibited enhanced optical absorption across the UV-visible spectrum with increasing hydrostatic pressure. Notably, a 1% tensile strain results in an improvement in visible light absorption efficiency. These results demonstrate that Ga2SSe/Bi2O3 heterojunctions hold great promise as direct Z-scheme photocatalysts for overall water splitting.

Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga2SSe heterostructures using first-principles calculations. Two stacking configurations, γ-GeSe/SGa2Se and γ-GeSe/SeGa2S, are explored, both exhibiting semiconducting behavior with type-II and type-I band alignments, respectively. Notably, our results show that the band alignment transition in these heterostructures can occur spontaneously by simply altering the stacking configuration, eliminating the need for external factors. Additionally, the electronic properties of these heterostructures are highly tunable with an applied electric field, further enabling transitions between type-I and type-II alignments. Specifically, a positive electric field induces a transition from type-II to type-I alignment in the γ-GeSe/SGa2Se heterostructure, while a negative field drives the reverse transition in the γ-GeSe/SeGa2S heterostructure. Our findings underscore the potential of γ-GeSe/Ga2SSe heterostructures for diverse applications, where the tunability of electronic properties is crucial for optimizing device performance.

Exploring the versatility of MoSe2/WS2 heterostructures

Two-dimensional materials and their combined heterostructures have paved the way for numerous next-generation electronic and optoelectronic applications. Herein, we performed first principles calculations to computationally design the MoSe2/WS2 heterostructure and consider its geometric structure, electronic properties and contact behavior, as well as the effects of the electric fields and strain. Our results show that the MoSe2/WS2 heterostructure is energetically, thermodynamically and mechanically stable. Depending on the stacking configurations, the MoSe2/WS2 heterostructure could form type-I or type-II band alignment. The versatility in contact behavior makes the MoSe2/WS2 heterostructure attractive in electronics and optoelectronics. The combination of the MoSe2/WS2 heterostructure also leads to an enhancement in the adsorption efficiency and the carrier mobility compared with the constituent components. More interestingly, our findings demonstrate that the electric field can induce the transition between type-I and type-II band alignments, as evident by the experimental measurement [J. Kistner-Morris, A. Shi, E. Liu, T. Arp, F. Farahmand, T. Taniguchi, K. Watanabe, V. Aji, C. H. Lui and N. Gabor, Nat. Commun., 2024, 15, 4075]. Additionally, we also find that strain can also induce the transition between type-I and type-II band alignments and lead to the transition from semiconductor to metal in the MoSe2/WS2 heterostructure. Our findings prove that the MoSe2/WS2 heterostructure holds significant potential for developing next-generation electronics.

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der Waals heterostructure (vdWH) contacts. We demonstrate that the p-type Schottky formed by MoSH/WSi2N4 and MoHS/WSi2N4 has extremely low Schottky barrier heights (SBHs). Due to its excellent charge injection efficiency, Janus MoSH may be regarded as an effective metal contact for WSi2N4 semiconductors. Furthermore, the interfacial characteristics and electronic structure of Janus MoSH/WSi2N4 vdWHs can not only reduce/eliminate SBH, but also forms the transition from p-ShC to n-ShC type and from Schottky contact (ShC) to Ohmic contact (OhC) through the layer spacing and electric field. Our results can offer a fresh method for optoelectronic applications based on metal/semiconductor Janus MoSH/WSi2N4 vdW heterostructures, which have strong potential in optoelectronic applications.

First-principles studies on the electronic and contact properties of monolayer Ga2STe-metal contacts

Monolayer (ML) Janus III-VI compounds have attracted the use of multiple competitive platforms for future-generation functional electronics, including non-volatile memories, field effect transistors, and sensors. In this work, the electronic and interfacial properties of ML Ga2STe-metal (Au, Ag, Cu, and Al) contacts are systematically investigated using first-principles calculations combined with the non-equilibrium Green's function method. The ML Ga2STe-Au/Ag/Al contacts exhibit weak electronic orbital hybridization at the interface, while the ML Ga2STe-Cu contact exhibits strong electronic orbital hybridization. The Te surface is more conducive to electron injection than the S surface in ML Ga2STe-metal contact. Quantum transport calculations revealed that when the Te side of the ML Ga2STe is in contact with Au, Ag and Cu electrodes, p-type Schottky contacts are formed. When in contact with the Al electrode, an n-type Schottky contact is formed with an electron SBH of 0.079 eV. When the S side of ML Ga2STe is in contact with Au and Al electrodes, p-type Schottky contacts are formed, and when it is in contact with Ag and Cu electrodes, n-type Schottky contacts are formed. Our study will guide the selection of appropriate metal electrodes for constructing ML Ga2STe devices.

Z-scheme Al2SeTe/GaSe and Al2SeTe/InS van der Waals heterostructures for photocatalytic water splitting

Designing Z-scheme van der Waals (vdW) heterostructured photocatalysts is a promising strategy for developing highly efficient overall water splitting. Herein, by employing density functional theory calculations, we systematically investigated the stability, electronic structures, photocatalytic and optical properties of Al2SeTe, GaSe, and InS monolayers and their corresponding vdW heterostructures. Interestingly, electronic structures show that all vdW heterostructures have direct band gaps, which is conducive to the transition of electrons from the valence band to the conduction band. Notably, Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures possess large overpotentials for Z-scheme photocatalytic water splitting, as proved by the results of band edge positions and band structure bending. Moreover, these vdW heterostructures exhibit good optical absorption in ultraviolet and visible light regions. We believe that our findings will open a new avenue for the modulation and development of Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures for photocatalytic water splitting.

Mn-Modified ZnO Nanoflakes for Optimal Photoelectrochemical Performance Under Visible Light: Experimental Design and Theoretical Rationalization

Doping of zinc oxide (ZnO) with manganese (Mn) tunes midbandgap states of ZnO to enhance its optical properties and makes it into an efficient photoactive material for photoelectrochemical water splitting, waste removal from water, and other applications. We demonstrate that ZnO modified with 1 at. % Mn exhibits the best performance, as rationalized by experimental, structural, and optical characterization and theoretical analysis. ZnO doped with the optimal Mn content possesses improved light absorption in the visible region and minimizes charge carrier recombination. The doping is substitutional and creates midgap states near the valence band. Mn atoms break localized charge traps at oxygen vacancy sites and eliminate photoluminescence peaks associated with oxygen vacancies. The optimal performance of Mn-modified ZnO is demonstrated with the photodegradation of Congo red and photoelectrochemical water splitting.

A multi-factor adjustable PtSe2/GaN van der Waals heterostructure with enhanced photocatalytic performance

Two-dimensional van der Waals heterostructures with multiple tunable approaches in electronic and optical properties are highly superior for photocatalysis and novel devices. By applying first-principles calculations, we systematically studied the electronic structure, optical absorption, carrier mobility and solar-to-hydrogen efficiency of PtSe2/GaN heterostructures, which are affected by different thicknesses, varying directions of polarization of the GaN nanosheets and applied mechanical strain of the whole system. The results indicate that these heterostructures exhibit thermodynamic stability at room-temperature (300 K), and most configurations have type-II band alignment, among which the heterostructure consisting of GaN trilayers and PtSe2 shows high visible-light absorption (1.71 × 105 cm-1) and ultra-wide range of pH values (pH = 0-14) for the photocatalytic water splitting reaction and exceedingly high overpotential for the hydrogen evolution reaction (3.375 eV). Simultaneously, being two of the most significant parameters of photocatalysis and devices, the carrier mobility and solar-to-hydrogen efficiency have also been calculated, respectively, reaching up to 1601 cm2 V-1 s-1 and 17.2%. Moreover, the photoelectrical properties can be highly tuned through further biaxial strain engineering; especially, the visible-light absorption can be enhanced to 2.85 × 105 cm-1 by applying 6% compression strain. Thus, the PtSe2/GaN heterostructure we proposed shows a broad prospect for photocatalytic water splitting.

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Following the successful experimental synthesis of single-layer metallic 1T-TaS₂ and semiconducting 2H-MoS₂, 2H-WSe₂, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures (vdWHs) contact. We show that 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ form n-type Schottky contact (n-ShC type) and p-type Schottky contact (p-ShC type) with ultralow Schottky barrier height (SBH), respectively. This indicates that 1T-TaS₂ can be considered as an effective metal contact with high charge injection efficiency for 2H-MoS₂, 2H-WSe₂ semiconductors. In addition, the electronic structure and interfacial properties of 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures can be transformed from n-type to p-type Schottky contact through the effect of layer spacing and the electric field. At the same time, the transition from Schottky contact to Ohmic contact can also occur by relying on the electric field and different interlayer spacing. Our results may provide a new approach for photoelectric application design based on metal/semiconductor 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures.

Transition metal anchored on red phosphorus to enable efficient photocatalytic H2 generation

Transition metal (TM) single atom catalysts (SACs) are of great potential for photocatalytic H₂ production because of their abundant catalytic active sites and cost-effectiveness. As a promising support material, red phosphorus (RP) based SACs are still rarely investigated. In this work, we have carried out systematic theoretical investigations by anchoring TM atoms (Fe, Co, Ni, Cu) on RP for efficient photocatalytic H₂ generation. Our density functional theory (DFT) calculations have revealed that 3d orbitals of TM locate close to the Fermi level to guarantee efficient electron transfer for photocatalytic performances. Compared with pristine RP, the introduction of single atom TM on the surface exhibit narrowed bandgaps, resulting in easier spatial separation for photon-generated charge carriers and an extended photocatalytic absorption window to the NIR range. Meanwhile, the H₂O adsorptions are also highly preferred on the TM single atoms with strong electron exchange, which benefits the subsequent water-dissociation process. Due to the optimized electronic structure, the activation energy barrier of water-splitting has been remarkably reduced in RP-based SACs, revealing their promising potential for high-efficiency H₂ production. Our comprehensive explorations and screening of novel RP-based SACs will offer a good reference for further designing novel photocatalysts for high-efficiency H₂ generation.

Enhancement of Photocatalytic and Photoelectrochemical Performance of ZnO by Mg Doping: Experimental and Density Functional Theory Insights

Doped ZnO nanostructures have shown great potential for solar energy applications. Considering the compatible ionic radius, Mg atoms can be doped into ZnO at different concentrations. The current work reports a combined experimental and density functional theory study on the influence of the Mg dopant concentration on ZnO performance simultaneously for photocatalytic dye removal and photoelectrochemical water splitting. Among all the samples, Mg(3)-ZnO (3 at. % Mg) exhibits superior sunlight-driven photocatalytic performance. The optimal Mg-ZnO shows an 8-fold increase in the photocatalytic activity compared to the pristine ZnO. Likewise, the most active photocatalyst shows high photoelectrochemical performance with a photocurrent response of 1.54 mA at the lowest onset potential, 11 times higher than the pristine ZnO. Tuning of the Mg content results in the generation of extra charge carriers and a reduced recombination rate, which are the crucial factors responsible for enhanced photocatalytic and photoelectrochemical performance.

Research progress of two-dimensional antimonene in energy storage and conversion

Since the first proposal of antimonene in 2015, extensive research attention has been drawn to its application in energy storage and conversion because of its excellent layered structure and fast ion diffusion properties. However, in contrast to the revolutionary expansion of antimonene-based energy devices, reviews on this topic that summarize and further guide the design of 2D antimonene for energy storage and conversion are rare. In this review, the structure, physicochemical properties, and popular synthesis approaches of antimonene are first summarised. Specifically, the rational design and application of antimonene in energy storage and conversion such as electrochemical batteries and supercapacitors, electrocatalytic hydrogen evolution reaction, electrocatalytic oxygen evolution reaction, electrocatalytic carbon dioxide reduction, photocatalytic reduction of organic pollution, photocatalytic reduction of carbon dioxide (CO₂), solar cells and photovoltaic devices are outlined. Finally, opportunities and challenges are presented to further advance the development and application of antimonene in energy conversion and storage.

The regulation of the withstand voltage performance of ZnO/GaN vertical heterostructures using external electric field and vacancy defects

The band gap of the heterostructure determines the withstand voltage. It is very important to regulate the band gap of heterojunctions and to investigate their electrical properties by applying external electric field. Based on density functional theory (DFT), ZnO/GaN vertical heterostructures with two stacking configurations (AB/BA and AB/AB, named H₁ and H₂, respectively) are constructed. The external electric field and vacancy defects of Zn, Ga, O and N atoms (V_Zn, V_Ga, V_O and V_N) are applied to analyze the electrical properties. The band gap can be tuned from 2.07 eV to 0 eV in H₁ and 1.53 eV-0 eV in H₂. As the electric field increases, H₁ has stronger withstand voltage (-0.84-0.56 V/Å) than H₂ (-0.26-0.26 V/Å). In addition, the structures deform obviously with the effect of vacancy defects, but remain stable. The presence of V_Ga and V_N enables H₁ and H₂ to exhibits metal conductivity and V_O change the band types of H₁ and H₂ from direct to indirect. The results of charge density difference (CDD) prove that a zero potential region and a weak electric field occur at the position of V_Zn and V_O, respectively. Likewise, the external electric field is applied to the defective heterostructures. The bandgap also exhibits strong tunability, and the heterostructure with V_O has the largest electric field modulation width. The above results indicate that ZnO/GaN exhibits excellent electrical properties with the influence of V_O, which represents potential applications in electronic devices.

A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application

The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (10⁴cm²V^-1s^-1), and strong visible to ultraviolet light absorption (10⁴-10⁵cm^-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.

Recycled Bifunctional Heterostructure Material: g-GaN/SnS for Photocatalytic Decomposition of Water and Efficient Detection of NO2

Recently, the energy crisis and environmental pollution problems have become increasingly severe. There is an urgent need to develop a class of multifunctional materials that can both produce clean energy and detect harmful gases. Herein, we propose a g-GaN/SnS heterostructure and explored its dual-optimal performance in photocatalytic hydrogen production and gas detection. Our results demonstrated that the g-GaN/SnS heterostructure has a suitable type II band alignment and excellent absorption in the visible range, which both indicate its potential application in photocatalysis. Furthermore, when the g-GaN/SnS heterostructure acted as a gas detection material, it was consistently susceptible to NO₂ gas molecules, according to charge transfer. Additionally, it has a very suitable material recovery time (∼0.5 h) when used for NO₂ detection, illustrating the recyclability of the material. Interestingly, the applied electric field of -0.4 V/Å can greatly increase the absorption coefficient in the visible range to 150% of the original. Also, the applied electric field of 0.6 V/Å can substantially enhance the gas detection sensitivity by 27% compared to the case without the electric field. Thus, the g-GaN/SnS heterostructure we proposed not only has the advantage of being bifunctional but also has the potential to be recycled.

A Cr2O3-doped graphene sensor for early diagnosis of liver cirrhosis: a first-principles study

Liver cirrhosis is among the leading causes of death worldwide. Because of its asymptomatic evolution, timely diagnosis of liver cirrhosis via non-invasive techniques is currently under investigation. Among the diagnostic methods employing volatile organic compounds directly detectable from breath, sensing of limonene (C₁₀H₁₆) represents one of the most promising strategies for diagnosing alcohol liver diseases, including cirrhosis. In the present work, by means of state-of-the-art Density Functional Theory calculations including the U correction, we present an investigation on the sensing capabilities of a chromium-oxide-doped graphene (i.e., Cr₂O₃-graphene) structure toward limonene detection. In contrast with other structures such as g-triazobenzol (g-C₆N₆) monolayers and germanane, which revealed their usefulness in detecting limonene via physisorption, the proposed Cr₂O₃-graphene heterostructure is capable of undergoing chemisorption upon molecular approaching of limonene over its surface. In fact, a high adsorption energy is recorded (∼-1.6 eV). Besides, a positive Moss-Burstein effect is observed upon adsorption of limomene on the Cr₂O₃-graphene heterostructure, resulting in a net increase of the bandgap (∼50%), along with a sizeable shift of the Fermi level toward the conduction band. These findings pave the way toward the experimental validation of such predictions and the employment of Cr₂O₃-graphene heterostructures as sensors of key liver cirrhosis biomarkers.

Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga2SSe heterostructures

In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga2SSe using first-principles calculations. Owing to the out-of-plane symmetry being broken, the BP/Ga2SSe vdWHs are divided into two different stacking patterns, which are BP/SGa2Se and BP/SeGa2S. Our results demonstrate that these stacking patterns are structurally and mechanically stable. The combination of single-layer BP and Janus Ga2SSe gives rise to an enhancement in the Young's modulus compared to the constituent monolayers. Furthermore, at the ground state, the BP/Ga2SSe vdWHs possess a type-I (straddling) band alignment, which is desired for next-generation optoelectronic applications. The interlayer separation and electric field are effectively used to tune the electronic features of the BP/Ga2SSe vdWH from the type-I to type-II band alignment, and from semiconductor to metal. Our findings show that the BP/Ga2SSe vdWH would be appropriate for next-generation multifunctional optoelectronic and photovoltaic devices.

Trade-off effect of 3d transition metal doped boron nitride on anchoring polysulfides towards application in lithium-sulfur battery

Sulfur cathodes in lithium-sulfur batteries (LSBs) suffer from the notorious "shuttle effect", low sulfur use ratio, and tardy transformation of lithium polysulfides (LiPSs), while using two-dimensional (2D) polar anchoring materials combined with single-atom catalysis is one of the promising methods to address these issues. Herein, the 3d transition metal (TM) doped 2D boron nitrides (BN), labeled as TM-BN, are studied for the anchoring and redox kinetics of LiPSs using first principles calculations. From the simulated results, the TM atom and adjacent N atoms are active adsorption sites for binding S atoms in LiPSs/S₈ and Li atoms in LiPSs, respectively. A negative d-band center closer to the Fermi level of TM-BN is key for enhancing the binding strength of TM-S and lowering the Li₂S decomposition energy barrier, while it deteriorates the activity of adjacent N atoms. Fortunately, the electrolyte environment has little effect on the superiority of the TM-BN for binding polysulfides/S₈, guaranteeing the sturdy anchor of polysulfides/S₈ in realistic conditions. The trade-off effect on the activities of TM and adjacent N atom sites in TM-BN for binding LiPSs highlights the excellence of Ti/V/Cr-BN as modification materials for LSB.

An analysis of Schottky barrier in silicene/Ga2SeS heterostructures by employing electric field and strain

Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga₂SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga₂SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.

Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi2N4 van der Waals Heterostructure

Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSi₂N₄, we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSi₂N₄ van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSi₂N₄ contact forms p-type Schottky contact (p-ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSi₂N₄ semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSi₂N₄ vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from p-ShC to n-ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSi₂N₄ vdW heterostructures.

Commensurate Assembly of C60 on Black Phosphorus for Mixed-Dimensional van der Waals Transistors

2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C₆₀ molecular crystals. Transmission electron microscopy and theoretical analysis of the C₆₀ /BP vdW heterostructure clearly confirm that the BP template results in oriented C₆₀ assembly with higher-order commensurism. Lateral and vertical devices with C₆₀ /BP junctions are fabricated via a lithography-free clean process, which allows one to investigate the ideal electrical properties of pristine C₆₀ /BP junctions. Effective tuning of the C₆₀ /BP junction barrier from 0.2 to 0.5 eV and maximum on-current density higher than 10⁴  mA cm^-2 are achieved with graphite/C₆₀ /BP vertical vdW transistors. Due to the formation of high-quality C₆₀ film and the semitransparent graphite top-electrode, the vertical transistors show high photoresponsivities up to ≈100 A W^-1 as well as a fast response time under visible light illumination.

Boosting the photocatalytic H2 evolution activity of type-II g-GaN/Sc2CO2 van der Waals heterostructure using applied biaxial strain and external electric field

Two-dimensional (2D) van der Waals (vdW) heterostructures are a new class of materials with highly tunable bandgap transition type, bandgap energy and band alignment. Herein, we have designed a novel 2D g-GaN/Sc2CO2 heterostructure as a potential solar-driven photocatalyst for the water splitting process and investigate its catalytic stability, interfacial interactions, and optical and electronic properties, as well as the effects of applying an electric field and biaxial strain using first-principles calculation. The calculated lattice mismatch and binding energy showed that g-GaN and Sc2CO2 are in contact and may form a stable vdW heterostructure. Ab initio molecular dynamics and phonon dispersion simulations show thermal and dynamic stability. g-GaN/Sc2CO2 has an indirect bandgap energy with appropriate type-II band alignment relative to the water redox potentials. Meanwhile, the interfacial charge transfer from g-GaN to Sc2CO2 can effectively separate electron-hole pairs. Moreover, a potential drop of 3.78 eV is observed across the interface, inducing a built-in electric field pointing from g-GaN to Sc2CO2. The heterostructure shows improved visible-light optical absorption compared to the isolated g-GaN and Sc2CO2 monolayers. Our study demonstrates that tunable electronic and structural properties can be realised in the g-GaN/Sc2CO2 heterostructure by varying the electric field and biaxial strain. In particular, the compressive strain and negative electric field are more effective for promoting hydrogen production performance. Since it is challenging to tune the electric field and biaxial strain experimentally, our research provides strategies to boost the performance of MXene-based heterojunction photocatalysts in solar harvesting and optoelectronic devices.

Structural, Electronic and Optical Properties of four α-Se-based Heterostructures with Hyperbolic Characteristics

The physical properties and potential applications of two-dimensional (2D) materials can be effectively modulated and enriched by constructing van der Waals heterostructures (VDWHs) with two or more 2D monolayer materials....

Boost the large driving photovoltages for overall water splitting in direct Z-scheme heterojunctions by interfacial polarization

Using direct Z-scheme heterojunction photocatalysts has been regarded as one of the most effective methods to separate photogenerated carriers for photocatalytic redox reactions of water splitting.

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Two-dimensional chalcogenides could play an important role to solve the short channel effect and extend the Moore's law in the post-Moore's era due to the excellent performances in the spintronics...

Enhanced H2 Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field

Lightweight two-dimensional materials are being studied for hydrogen storage applications due to their large surface area. The characteristics of hydrogen adsorption on the h-BN bilayer under the applied electric field were investigated. The overall storage capacity of the bilayer is 6.7 wt % from our theoretical calculation with E _ads of 0.223 eV/H₂. The desorption temperature to remove the adsorbed H₂ molecules from the surface of the h-BN bilayer system in the absence of an external electric field is found to be ∼176 K. With the introduction of an external electric field, the E _ads lies in the range of 0.223-0.846 eV/H₂ and the desorption temperature is from 176 to 668 K. Our results show that the external electric field enhances the average adsorption energy as well as the desorption temperature and thus makes the h-BN bilayer a promising candidate for hydrogen storage.

Achieving an Ohmic contact in graphene-based van der Waals heterostructures by intrinsic defects and the inner polarized electric field of Janus AlGaSSe

The Schottky barrier height is mainly affected by the synergistic action of the inner polarization electric field of Janus AlGaSSe and the 2D/2D heterostructure.