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Zhang Q, Zhang D, Liao Z, Cao YB, Kumar M, Poddar S, Han J, Hu Y, Lv H, Mo X, Srivastava AK, Fan Z. Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405418. [PMID: 39183527 DOI: 10.1002/adma.202405418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/22/2024] [Indexed: 08/27/2024]
Abstract
Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).
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Affiliation(s)
- Qianpeng Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zebing Liao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Bryan Cao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Mallem Kumar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Junchao Han
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Ying Hu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Hualiang Lv
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Abhishek Kumar Srivastava
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
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Wu X, Wang J, Tang C, Li L, Chen W, Wu Z, Zhu J, Li T, Song H, Bai X. Synergistic regulation effect of magnesium and acetate ions on structural rigidity for synthesizing an efficient and robust CsPbI 3 perovskite toward red light-emitting devices. Dalton Trans 2023; 52:2175-2181. [PMID: 36723095 DOI: 10.1039/d2dt03816a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
The structure of CsPbI3 nanocrystals (NCs) with excellent photoelectric properties easily collapses, which hinders their application in light-emitting diodes (LEDs). Herein, we accomplished the synthesis of efficient and stable CsPbI3 NCs by regulating structural rigidity under the synergistic effect of Mg2+ and AcO- ions. The introduced AcO- and Mg2+ ions increase surface steric hindrance and defect formation energy, which enhances the structural rigidity of the perovskite. As a result, the CsPbI3 NCs display an outstanding photoluminescence quantum yield of 95.7%, in conjunction with reduced defect state density, balanced carrier injection, and distinguished conductivity. Remarkably, the modified CsPbI3 NCs exhibit excellent stability under ambient conditions for 180 days and can even survive when the temperature reaches 150 °C. Given their enhanced structural rigidity, LEDs made from these modified CsPbI3 NCs exhibit a maximum luminance and an EQE of 3281 cd m-2 and 13.2%, respectively, which are significantly improved compared with those of unmodified CsPbI3 NC LEDs.
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Affiliation(s)
- Xiufeng Wu
- College of Physics, Liaoning University, Shenyang, China
| | - Jiwei Wang
- College of Physics, Liaoning University, Shenyang, China
| | - Chengyuan Tang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Lifang Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Wenda Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Jinyang Zhu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Tingting Li
- School of Materials Science and Engineering, Jilin Jianzhu University, Changchun, China.
| | - Hongwei Song
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
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