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Zhen J, Liu Y, Dong H, Zhang Z, Zhang S, Wang G, Zhou Y, Wan S, Chen B, Liu G. Pressure-induced disorder and nanosizing inhibits superconductivity in In 2Te 3. NANOTECHNOLOGY 2023; 35:05LT01. [PMID: 37871598 DOI: 10.1088/1361-6528/ad0602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 10/22/2023] [Indexed: 10/25/2023]
Abstract
The generation of disorder often gives rise to profound and irreversible physical phenomena. Here, we explore the influence of disorder on the superconducting properties of In2Te3through comprehensive high-pressure investigations. Building upon previous findings, we investigated the progressive suppression of superconductivity in In2Te3during the depressurization process: the increased disorder that ultimately leads to the complete disappearance of the superconducting state. Simultaneously, our high-pressure x-ray diffraction analysis reveals an irreversible structural phase transition. Furthermore, microstructure analysis using transmission electron microscopy clearly demonstrates both grain refinement and a substantial enhancement of disorder. These findings not only provide valuable insights into the mechanism by which disorder suppresses superconductivity, but also offer guidance for future advancements in the fabrication of atmospheric-pressure superconductors.
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Affiliation(s)
- Jiapeng Zhen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Ying Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Ziyou Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Shihui Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Gui Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Yan Zhou
- School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Shun Wan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
| | - Guanjun Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
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Zou B, Wang X, Zhou Y, Zhou Y, Wu Y, Xing T, He Y, Yang J, Chen Y, Ren P, Sun H. Optical Effect Modulation in Polarized Raman Spectroscopy of Transparent Layered α-MoO 3. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206932. [PMID: 36807515 DOI: 10.1002/smll.202206932] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 01/15/2023] [Indexed: 05/11/2023]
Abstract
Optical anisotropy, which is quantified by birefringence (Δn) and linear dichroism (Δk), can significantly modulate the angle-resolved polarized Raman spectroscopy (ARPRS) response of anisotropic layered materials (ALMs) by external interference. This work studies the separate modulation of birefringence on the ARPRS response and the intrinsic response by selecting transparent birefringent crystal α-MoO3 as an excellent platform. It is found that there are several anomalous ARPRS responses in α-MoO3 that cannot be reproduced by the real Raman tensor widely used in non-absorbing materials; however, they can be well explained by considering the birefringence-induced Raman selection rules. Moreover, the systematic thickness-dependent study indicates that birefringence modulates the ARPRS response to render an interference pattern; however, the amplitude of modulation is considerably lower than that by linear dichroism as occurred in black phosphorous. This weak modulation brings convenience to the crystal orientation determination of transparent ALMs. Combining the atomic vibrational pattern and bond polarizability model, the intrinsic ARPRS response of α-MoO3 is analyzed, giving the physical origins of the Raman anisotropy. This study employs α-MoO3 as an example, although it is generally applicable to all transparent birefringent ALMs.
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Affiliation(s)
- Bo Zou
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Xiaonan Wang
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Yu Zhou
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Yan Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Yanyan Wu
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Tiantian Xing
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Yang He
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Jinfeng Yang
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Yuxiang Chen
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Peng Ren
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
| | - Huarui Sun
- School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen, Shenzhen, Guangdong, 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, P. R. China
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