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Mei T, Liu W, Xu G, Chen Y, Wu M, Wang L, Xiao K. Ionic Transistors. ACS NANO 2024. [PMID: 38285731 DOI: 10.1021/acsnano.3c06190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2024]
Abstract
Biological voltage-gated ion channels, which behave as life's transistors, regulate ion transport precisely and selectively through atomic-scale selectivity filters to sustain important life activities. By this inspiration, voltage-adaptable ionic transistors that use ions as signal carriers may provide an alternative information processing unit beyond solid-state electronic devices. This review provides a comprehensive overview of the first generation of biomimetic ionic transistors, including their operating mechanisms, device architecture development, and property characterizations. Despite its infancy, significant progress has been made in the applications of ionic transistors in fields such as DNA detection, drug delivery, and ionic circuits. Challenges and prospects of full exploitation of ionic transistors for a broad spectrum of practical applications are also discussed.
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Affiliation(s)
- Tingting Mei
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Wenchao Liu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Guoheng Xu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Yuanxia Chen
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Minghui Wu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Li Wang
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Kai Xiao
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
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Pandey D, Bhattacharyya S, Ghosal S. Charge Selectivity of an Ionic Transistor. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:4571-4577. [PMID: 33825463 DOI: 10.1021/acs.langmuir.1c00177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The charge selective properties of a long planar nanochannel with an embedded finite uniformly charged section in the middle are studied. The probability flux of a single test ion initially confined to the inlet reservoir is determined by integrating the Smoluchowski equation using a previously published series solution for the Debye-Hückel potential in this geometry. The charge selective properties are characterized by a dimensionless quantity that we call the "fractional blockage". We study how the fractional blockage depends on the dimensionless parameters that characterize the charge state and channel geometry. In the limit of strongly overlapped wall Debye layers, analytical expressions for the fractional blockage are presented that are found to be in good agreement with numerically computed values in the appropriate asymptotic regimes. These results may be helpful in the design of nanofluidic devices that have a variety of applications.
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Affiliation(s)
- Doyel Pandey
- Department of Mathematics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Somnath Bhattacharyya
- Department of Mathematics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Sandip Ghosal
- Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Engineering Sciences and Applied Mathematics, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
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