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Sharma M, Mazumder N, Ajayan PM, Deb P. Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:283001. [PMID: 38574668 DOI: 10.1088/1361-648x/ad3abf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.
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Affiliation(s)
- Monika Sharma
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
| | - Nirmal Mazumder
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, United States of America
| | - Pritam Deb
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
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Mohanty S, Deb P. Sign-flipping intrinsic anomalous Hall conductivity with Berry curvature tunability in a half-metallic ferromagnet NbSe 2-VSe 2 lateral heterostructure. NANOSCALE 2024. [PMID: 38618922 DOI: 10.1039/d3nr06266j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Single-layer half-metal magnets offer exciting scope in spin electronic quantum applications owing to improved spin transport, reduced interfacial resistance and streamlined device fabrication. Herein, we report the emergence of sign-flipping intrinsic anomalous Hall conductivity (AHC) as a result of changes in Berry curvature under an external electric field and half metallicity in a lateral heterostructure composed of centrosymmetric metallic monolayers 1T-NbSe2 and 1T-VSe2. The metallic monolayers 1T-NbSe2 and 1T-VSe2 laterally interfaced along the zigzag orientation break inversion symmetry at the interface and result in distinctive Berry curvature features. Furthermore, the half-metallic character was prominent with gapped states in the spin-up channel, while the spin-down state remained conductive; we observed the unique manifestation of sign-flipping intrinsic AHC at the Fermi level in addition to the electron- and hole-doped regions. This sign-flipping aspect of AHC at the Fermi level is of fundamental importance from the prospect of real-time device applications as it eliminates the necessity of supplementary actions, such as doping and strain engineering, which are traditionally employed to achieve AHC sign reversal. Additionally, a phase transition from half metal to metal occurs at a field of 0.5 V Å-1 and beyond. Half metallicity with sign switching AHC via external electric field makes the lateral NbSe2-VSe2 heterostructure a potential candidate for real-time energy-efficient low-power spintronic devices.
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Affiliation(s)
- Saransha Mohanty
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
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Konwar K, Kaushik SD, Babu PD, Chaturvedi A, Kumar D, Chakraborty R, Mukhopadhyay R, Sharma P, Lodha S, Sen D, Deb P. Integrative Modulation of Magnetic Resonance Transverse and Longitudinal Relaxivity in a Cell-Viable Bimagnetic Ensemble, γ-Fe 2O 3@ZnFe 2O 4. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:1793-1803. [PMID: 38181379 DOI: 10.1021/acs.langmuir.3c03049] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2024]
Abstract
The potential application of magnetic nanosystems as magnetic resonance imaging (MRI) contrast agents has been thoroughly investigated. This work seeks to attain robust MRI-contrast efficiency by designing an interacting landscape of a bimagnetic ensemble of zinc ferrite nanorods and maghemite nanoparticles, γ-Fe2O3@ZnFe2O4. Because of competing spin clusters and structural anisotropy triggered by isotropic γ-Fe2O3 and anisotropic ZnFe2O4, γ-Fe2O3@ZnFe2O4 undergoes the evolution of cluster spin-glass state as evident from the critical slowing down law. Such interacting γ-Fe2O3@ZnFe2O4 with spin flipping of 1.2 × 10-8 s and energy barrier of 8.2 × 10-14 erg reflects enhanced MRI-contrast signal. Additionally, γ-Fe2O3@ZnFe2O4 is cell-viable to noncancerous HEK 293 cell-line and shows no pro-tumorigenic activity as observed in MDA-MB-231, an extremely aggressive triple-negative breast cancer cell line. As a result, γ-Fe2O3@ZnFe2O4 is a feasible option for an MRI-contrast agent having longitudinal relaxivity, r1, of 0.46 s-1mM-1 and transverse relaxivity, r2, of 15.94 s-1mM-1, together with r2/r1 of 34.65 at 1.41 T up to a modest metal concentration of 0.1 mM. Hence, this study addresses an interacting isotropic/anisotropic framework with faster water proton decay in MR-relaxivity resulting in phantom signal amplification.
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Affiliation(s)
- Korobi Konwar
- Department of Physics, Tezpur University (Central University), Tezpur-784028, India
| | - Som Datta Kaushik
- UGC-DAE Consortium for Scientific Research, Mumbai Centre, R-5 Shed, Bhabha Atomic Research Centre, Mumbai 400085, India
| | - Peram Delli Babu
- UGC-DAE Consortium for Scientific Research, Mumbai Centre, R-5 Shed, Bhabha Atomic Research Centre, Mumbai 400085, India
| | | | - Dinesh Kumar
- Centre of Biomedical Research, SGPGIMS Campus, Lucknow 226014, India
| | - Rituraj Chakraborty
- Department of Molecular Biology and Biotechnology, Tezpur University (Central University), Tezpur784028, India
| | - Rupak Mukhopadhyay
- Department of Molecular Biology and Biotechnology, Tezpur University (Central University), Tezpur784028, India
| | - Pooja Sharma
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Debasis Sen
- Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India
| | - Pritam Deb
- Department of Physics, Tezpur University (Central University), Tezpur-784028, India
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