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Qin JX, Shen CL, Li L, Liu H, Zhang WY, Yang XG, Shan CX. Broadband Negative Photoconductive Response in Carbon Nanodots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404694. [PMID: 38857532 DOI: 10.1002/adma.202404694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 05/13/2024] [Indexed: 06/12/2024]
Abstract
Due to the broadband response and low selectivity of external light, negative photoconductivity (NPC) effect holds great potential applications in photoelectric devices. Herein, different photoresponsive carbon nanodots (CDs) are prepared from diverse precursors and the broadband response from the NPC CDs are utilized to achieve the optoelectronic logic gates and optical imaging for the first time. In detail, the mcu-CDs which are prepared by the microwave-assisted polymerization of citric acid and urea possess the large specific surface area and abundant hydrophilic groups as sites for the adsorption of H2O molecules and thereby present a high conductivity in dark. Meanwhile, the low affinity of mcu-CDs to H2O molecules permits the light-induced desorption of H2O molecules by heat effect and thus endow the mcu-CDs with a low conductivity under illumination. The easy absorption and desorption of H2O molecules contribute to the extraordinary NPC of mcu-CDs. With the broadband NPC response in CDs, the optoelectronic logic gates and flexible optical imaging system are established, achieving the applications of "NOR" or "NAND" logic operations and high-quality optical images. These findings unveil the unique optoelectronic properties of CDs, and have the potential to advance the applications of CDs in optoelectronic devices.
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Affiliation(s)
- Jin-Xu Qin
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Cheng-Long Shen
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Lei Li
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Hang Liu
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Wu-You Zhang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Xi-Gui Yang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, China
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Wang L, Wang H, Liu J, Wang Y, Shao H, Li W, Yi M, Ling H, Xie L, Huang W. Negative Photoconductivity Transistors for Visuomorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403538. [PMID: 39040000 DOI: 10.1002/adma.202403538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Revised: 06/26/2024] [Indexed: 07/24/2024]
Abstract
Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance.
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Affiliation(s)
- Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Haotian Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - He Shao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KloFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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Ma S, Li G, Li Z, Wang T, Zhang Y, Li N, Chen H, Zhang N, Liu W, Huang Y. Negative Photoconductivity of Fe 3GeTe 2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305709. [PMID: 38207342 DOI: 10.1002/adma.202305709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 12/10/2023] [Indexed: 01/13/2024]
Abstract
Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.
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Affiliation(s)
- Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Tingyuan Wang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Ningning Li
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Haisheng Chen
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Nan Zhang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Weiwei Liu
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
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Jin G, Kim SH, Han HJ. Synthesis and Future Electronic Applications of Topological Nanomaterials. Int J Mol Sci 2023; 25:400. [PMID: 38203574 PMCID: PMC10779379 DOI: 10.3390/ijms25010400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/19/2023] [Accepted: 12/22/2023] [Indexed: 01/12/2024] Open
Abstract
Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.
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Affiliation(s)
- Gangtae Jin
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
| | - Seo-Hyun Kim
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
| | - Hyeuk-Jin Han
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
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Zhao S, Sun J, Yin Y, Guo Y, Liu D, Miao C, Feng X, Wang Y, Xu M, Yang ZX. In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity. J Phys Chem Lett 2021; 12:3046-3052. [PMID: 33739121 DOI: 10.1021/acs.jpclett.1c00540] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeSx shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 105 A·W-1 and detectivity of 1012 Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm-2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications.
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Affiliation(s)
- Shuai Zhao
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Guo
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Chengcheng Miao
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiao Feng
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yiming Wang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mingsheng Xu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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