Exchange Bias in Magnetic Topological Insulator Superlattices

Topological Surface State Annihilation and Creation in SnTe/Crx(BiSb)2-xTe3 Heterostructures

Topological surface states are a new class of electronic states with novel properties, including the potential for annihilation between surface states from two topological insulators at a common interface. Here, we report the annihilation and creation of topological surface states in the SnTe/Cr_x(BiSb)_2-xTe₃ (CBST) heterostructures as evidenced by magneto-transport, polarized neutron reflectometry, and first-principles calculations. Our results show that topological surface states are induced in the otherwise topologically trivial two-quintuple-layers thick CBST when interfaced with SnTe, as a result of the surface state annihilation at the SnTe/CBST interface. Moreover, we unveiled systematic changes in the transport behaviors of the heterostructures with respect to changing Fermi level and thickness. Our observation of surface state creation and annihilation demonstrates a promising way of designing and engineering topological surface states for dissipationless electronics.

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure-Bi₂ Te₃ /Ni₈₀ Fe₂₀ because of diffusion of Ni in Bi₂ Te₃ (Ni-Bi₂ Te₃ ). The AFM property of the Ni-Bi₂ Te₃ interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi₂ Te₃ layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni-Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi₂ Te₄ in the Ni-Bi₂ Te₃ interface layer. The Neél temperature of the Ni-Bi₂ Te₃ layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

Magnetic Topological Insulator Heterostructures: A Review

Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)₂ Te₃ films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.

Giant Vertical Magnetization Shift Caused by Field-Induced Ferromagnetic Spin Reconfiguration in Ni50Mn36Ga14 Alloy

Vertical magnetization shift (VMS) is a special type of exchange bias effect that may lead to a revolution in future ultrahigh-density magnetic recording technology. However, there are very few reports focusing on the performance of VMS due to the unclear mechanism. In this paper, a giant vertical magnetization shift (M_E) of 6.34 emu/g is reported in the Ni₅₀Mn₃₆Ga₁₄ alloy. The VMS can be attributed to small ferromagnetic ordered regions formed by spin reconfiguration after field cooling, which are embedded in an antiferromagnetic matrix. The strong cooling-field dependence, temperature dependence, and training effect all corroborate the presence of spin reconfiguration and its role in the VMS. This work can enrich VMS research and increase its potential in practical applications as well.