1
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Abdukayumov K, Mičica M, Ibrahim F, Vojáček L, Vergnaud C, Marty A, Veuillen JY, Mallet P, de Moraes IG, Dosenovic D, Gambarelli S, Maurel V, Wright A, Tignon J, Mangeney J, Ouerghi A, Renard V, Mesple F, Li J, Bonell F, Okuno H, Chshiev M, George JM, Jaffrès H, Dhillon S, Jamet M. Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe 2 Probed by THz Spintronic Emission. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304243. [PMID: 38160244 DOI: 10.1002/adma.202304243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 11/09/2023] [Indexed: 01/03/2024]
Abstract
2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.
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Affiliation(s)
- Khasan Abdukayumov
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Martin Mičica
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Fatima Ibrahim
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Libor Vojáček
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Céline Vergnaud
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Alain Marty
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Jean-Yves Veuillen
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | - Pierre Mallet
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | | | | | - Serge Gambarelli
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Vincent Maurel
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Adrien Wright
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Jérôme Tignon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Juliette Mangeney
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Palaiseau, 91120, France
| | - Vincent Renard
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Florie Mesple
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Jing Li
- CEA, Leti, Université Grenoble Alpes, Grenoble, 38000, France
| | - Frédéric Bonell
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Hanako Okuno
- CEA, IRIG-MEM, Université Grenoble Alpes, Grenoble, 38000, France
| | - Mairbek Chshiev
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
- Institut Universitaire de France, Paris, 75231, France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Sukhdeep Dhillon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Matthieu Jamet
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
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2
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Guillet T, Galceran R, Sierra JF, Belarre FJ, Ballesteros B, Costache MV, Dosenovic D, Okuno H, Marty A, Jamet M, Bonell F, Valenzuela SO. Spin-Orbit Torques and Magnetization Switching in (Bi,Sb) 2Te 3/Fe 3GeTe 2 Heterostructures Grown by Molecular Beam Epitaxy. NANO LETTERS 2024; 24:822-828. [PMID: 38263950 DOI: 10.1021/acs.nanolett.3c03291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)2Te3 with 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of Jc ∼ 1010 A/m2, with minimal device-to-device variations compared to previous investigations involving traditional FMs.
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Affiliation(s)
- Thomas Guillet
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Regina Galceran
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Francisco J Belarre
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Belén Ballesteros
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Marius V Costache
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | | | - Hanako Okuno
- Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France
| | - Alain Marty
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Matthieu Jamet
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Frédéric Bonell
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain
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3
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Huang Q, Liu S, Yang T, Xie R, Cai L, Cao Q, Lü W, Bai L, Tian Y, Yan S. Current-Induced Magnetization Switching in Light-Metal-Oxide/Ferromagnetic-Metal Bilayers via Orbital Rashba Effect. NANO LETTERS 2023. [PMID: 38019659 DOI: 10.1021/acs.nanolett.3c03972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The orbital angular momentum (OAM) generation as well as its associated orbital torque is currently a matter of great interest in spin-orbitronics and is receiving increasing attention. In particular, recent theoretical work predicts that the oxidized light metal Cu can serve as an efficient OAM generator through its surface orbital Rashba effect. Here, for the first time, the crucial current-induced magnetic-field-free in-plane magnetization reversal is experimentally demonstrated in CoFeB/CuOx bilayers without any heavy elements. We show that the critical current density can be comparable to that of strong spin-orbit coupling systems with heavy metals (Pt and Ta) and that the magnetization reversal mechanism is governed by coherent rotation in the grains through the second-harmonic and magneto-optical Kerr effect measurements. Our results indicate that light metal oxides can play an equally important role as heavy metals in magnetization reversal, broadening the choice of materials for engineering spintronic devices.
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Affiliation(s)
- QiKun Huang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Senmiao Liu
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tianxiang Yang
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Ronghuan Xie
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Li Cai
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Qiang Cao
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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4
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Binda F, Fedel S, Alvarado SF, Noël P, Gambardella P. Spin-Orbit Torques and Spin Hall Magnetoresistance Generated by Twin-Free and Amorphous Bi 0.9 Sb 0.1 Topological Insulator Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304905. [PMID: 37568279 DOI: 10.1002/adma.202304905] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 07/28/2023] [Indexed: 08/13/2023]
Abstract
Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi1-x Sbx is a prominent topological insulator that has a high charge-to-spin conversion efficiency. However, the origin and magnitude of the SOTs induced by current-injection in Bi1-x Sbx remain controversial. Here, the investigation of the SOTs and spin Hall magnetoresistance resulting from charge-to-spin conversion in twin-free epitaxial layers of Bi0.9 Sb0.1 (0001) coupled to FeCo are investigated, and compared with those of amorphous Bi0.9 Sb0.1 . A large charge-to-spin conversion efficiency of 1 in the first case and less than 0.1 in the second is found, confirming crystalline Bi0.9 Sb0.1 as a strong spin-injector material. The SOTs and spin Hall magnetoresistance are independent of the direction of the electric current, indicating that charge-to-spin conversion in single-crystal Bi0.9 Sb0.1 (0001) is isotropic despite the strong anisotropy of the topological surface states. Further, it is found that the damping-like SOT has a non-monotonic temperature dependence with a minimum at 20 K. By correlating the SOT with resistivity and weak antilocalization measurements, charge-spin conversion is concluded to occur via thermally excited holes from the bulk states above 20 K, and conduction through the isotropic surface states with increasing spin polarization due to decreasing electron-electron scattering below 20 K.
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Affiliation(s)
- Federico Binda
- Department of Materials, ETH Zurich, CH-8093, Zurich, Switzerland
| | - Stefano Fedel
- Department of Materials, ETH Zurich, CH-8093, Zurich, Switzerland
| | | | - Paul Noël
- Department of Materials, ETH Zurich, CH-8093, Zurich, Switzerland
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5
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Xue X, Huang F, Hu G. Spin polarization in quantum point contact based on wurtzite topological quantum well. Phys Chem Chem Phys 2023; 25:26164-26171. [PMID: 37740355 DOI: 10.1039/d3cp02747c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
Manipulating spin polarization in wide-gap wurtzite semiconductors is crucial for the development of high-temperature spintronics applications. A topological insulator revealed recently in wurtzite quantum wells (QWs) provides a platform to mediate spin-polarized transport through the polarization field-driven topological edges and large Rashba spin-orbit coupling (SOC). Here, we propose a spin-polarized device in a quantum point contact (QPC) structure based on ZnO/CdO wurtzite topological QWs. The results show that the QPC width can sufficiently control the lateral spin-orbit coupling (SOC) as well as the band gap of the edge states through the quantum size effect. As a result, the spin-polarized conductance exhibits oscillation due to the spin precession, which can be controlled by adjusting the voltage imposed on the split gate. The QPC-induced large spin splitting is highly nonlinear and becomes strong close to the gap. The spin splitting of the edge states will be suppressed for QPC widths greater than 50 nm, and thus lead to an extremely long spin precession length. This QPC width-dependent lateral SOC effect provides an emerging electrical approach to manipulate spin-polarized electron transport in topological wurtzite systems.
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Affiliation(s)
- Xin Xue
- Department of Physics, Lvliang University, Lvliang 03300, China
| | - Fobao Huang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Gongwei Hu
- Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang, 443002, China.
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6
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Cullen JH, Atencia RB, Culcer D. Spin transfer torques due to the bulk states of topological insulators. NANOSCALE 2023; 15:8437-8446. [PMID: 37096561 DOI: 10.1039/d2nr05176a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Spin torques at topological insulator (TI)/ferromagnet interfaces have received considerable attention in recent years with a view towards achieving full electrical manipulation of magnetic degrees of freedom. The most important question in this field concerns the relative contributions of bulk and surface states to the spin torque, a matter that remains incompletely understood. Whereas the surface state contribution has been extensively studied, the contribution due to the bulk states has received comparatively little attention. Here we study spin torques due to TI bulk states and show that: (i) there is no spin-orbit torque due to the bulk states on a homogeneous magnetisation, in contrast to the surface states, which give rise to a spin-orbit torque via the well-known Edelstein effect. (ii) The bulk states give rise to a spin transfer torque (STT) due to the inhomogeneity of the magnetisation in the vicinity of the interface. This spin transfer torque, which has not been considered in TIs in the past, is somewhat unconventional since it arises from the interplay of the bulk TI spin-orbit coupling and the gradient of the monotonically decaying magnetisation inside the TI. Whereas we consider an idealised model in which the magnetisation gradient is small and the spin transfer torque is correspondingly small, we argue that in real samples the spin transfer torque should be sizable and may provide the dominant contribution due to the bulk states. We show that an experimental smoking gun for identifying the bulk states is the fact that the field-like component of the spin transfer torque generates a spin density with the same size but opposite sign for in-plane and out-of-plane magnetisations. This distinguishes them from the surface states, which are expected to give a spin density of a similar size and the same sign for both an in-plane and out-of-plane magnetisations.
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Affiliation(s)
- James H Cullen
- School of Physics, The University of New South Wales, Sydney 2052, Australia.
| | - Rhonald Burgos Atencia
- School of Physics, The University of New South Wales, Sydney 2052, Australia.
- Facultad de Ingenierías, Departamento de Ciencias Básicas, Universidad del Sinú, Cra.1w No. 38-153, 4536534, Montería, Córdoba 230002, Colombia
| | - Dimitrie Culcer
- School of Physics, The University of New South Wales, Sydney 2052, Australia.
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7
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Yu R, Cao JF, Meng XY, Zhu FY, Li JQ, Qu GX, Huang YB, Wang Y, Tai RZ. Highly Tunable Charge-Spin Conversion in Topological Insulator Cr 0.08-(Bi 0.37Sb 0.63) 1.92Te 3 via Ferroelectric Polarization. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48171-48178. [PMID: 36251523 DOI: 10.1021/acsami.2c09778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Topological insulators possess strong spin-orbit coupling, which potentially presents efficient charge-spin interconversion. The effective manipulation of this conversion plays a central role in spin-based device applications and is attracting increasing attention nowadays. In this study, by constructing a multifunctional hybrid device Cr-BST/Py/PMN-PT and applying spin-torque ferromagnetic resonance measurement, continuously controllable charge-spin conversion efficiency and even the enhancement of its value up to about 450% are realized via regulation of the ferroelectric polarization in the topological insulator Cr-BST. The band structure of Cr-BST characterized by angle-resolved photoelectron spectroscopy measurement presents an apparent Dirac-like state located at the large band gap of the bulk state near the Fermi level, which indicates a surface state-dominated contribution to the charge-spin conversion. Further investigation via density functional theory on the electronic structure of BST verifies that the controllable conversion efficiency dominantly originates from the evolution of the band structure under strain modulation. These findings demonstrate TIs as one of the promising materials for the charge-spin interconversion and its regulation, which are instructive for low-dissipation spintronics devices.
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Affiliation(s)
- Rui Yu
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Jie Feng Cao
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Xiang Yu Meng
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Fang Yuan Zhu
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Jun Qin Li
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Ge Xing Qu
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, China
| | - Yao Bo Huang
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Yong Wang
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
| | - Ren Zhong Tai
- Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai201204, China
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8
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Choi WY, Arango IC, Pham VT, Vaz DC, Yang H, Groen I, Lin CC, Kabir ES, Oguz K, Debashis P, Plombon JJ, Li H, Nikonov DE, Chuvilin A, Hueso LE, Young IA, Casanova F. All-Electrical Spin-to-Charge Conversion in Sputtered Bi xSe 1-x. NANO LETTERS 2022; 22:7992-7999. [PMID: 36162104 DOI: 10.1021/acs.nanolett.2c03429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies are easily neglected or underestimated. Here, we demonstrate all-electrical spin-to-charge conversion in BixSe1-x nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.
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Affiliation(s)
- Won Young Choi
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Isabel C Arango
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Van Tuong Pham
- Univ. Grenoble Alpes, CNRS, Institut Neel, F-38000 Grenoble, France
| | - Diogo C Vaz
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Inge Groen
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Emily S Kabir
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Kaan Oguz
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | | | - John J Plombon
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Hai Li
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Dmitri E Nikonov
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Ian A Young
- Components Research, Intel Corp., Hillsboro, Oregon 97124, United States
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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9
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Huang Q, Guan C, Fan Y, Zhao X, Han X, Dong Y, Xie X, Zhou T, Bai L, Peng Y, Tian Y, Yan S. Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering. ACS NANO 2022; 16:12462-12470. [PMID: 35866710 DOI: 10.1021/acsnano.2c03756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.
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Affiliation(s)
- Qikun Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Chaoshuai Guan
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yibo Fan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Han
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Dong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xuejie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Tie Zhou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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10
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Two-dimensional materials prospects for non-volatile spintronic memories. Nature 2022; 606:663-673. [PMID: 35732761 DOI: 10.1038/s41586-022-04768-0] [Citation(s) in RCA: 47] [Impact Index Per Article: 23.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Accepted: 04/19/2022] [Indexed: 01/12/2023]
Abstract
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
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Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet. Nat Commun 2021; 12:6491. [PMID: 34795211 PMCID: PMC8602386 DOI: 10.1038/s41467-021-26453-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 09/27/2021] [Indexed: 12/03/2022] Open
Abstract
Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities. Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological antiferromagnet Mn3Sn.
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Tang W, Liu H, Li Z, Pan A, Zeng Y. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100847. [PMID: 34323390 PMCID: PMC8456225 DOI: 10.1002/advs.202100847] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.
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Affiliation(s)
- Wei Tang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Haoliang Liu
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Zhe Li
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Yu‐Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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