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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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Venanzi T, Graziotto L, Macheda F, Sotgiu S, Ouaj T, Stellino E, Fasolato C, Postorino P, Mišeikis V, Metzelaars M, Kögerler P, Beschoten B, Coletti C, Roddaro S, Calandra M, Ortolani M, Stampfer C, Mauri F, Baldassarre L. Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy. PHYSICAL REVIEW LETTERS 2023; 130:256901. [PMID: 37418733 DOI: 10.1103/physrevlett.130.256901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Accepted: 05/15/2023] [Indexed: 07/09/2023]
Abstract
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at K, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D^{'} peaks with respect to that measured in graphite. Comparing with fully ab initio theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two-dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.
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Affiliation(s)
- Tommaso Venanzi
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Lorenzo Graziotto
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Francesco Macheda
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
| | - Simone Sotgiu
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Taoufiq Ouaj
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Elena Stellino
- Department of Physics and Geology, University of Perugia, via Alessandro Pascoli, 06123 Perugia, Italy
| | - Claudia Fasolato
- Institute for Complex System, National Research Council (ISC-CNR), 00185 Rome, Italy
| | - Paolo Postorino
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Vaidotas Mišeikis
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
- Istituto Italiano di Tecnologia, Center for Nanotechnology Innovation @NEST, Piazza San Silvestro, 12-56126 Pisa, Italy
| | - Marvin Metzelaars
- Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
| | - Paul Kögerler
- Institute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany
| | - Bernd Beschoten
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Camilla Coletti
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
- Istituto Italiano di Tecnologia, Center for Nanotechnology Innovation @NEST, Piazza San Silvestro, 12-56126 Pisa, Italy
| | - Stefano Roddaro
- Department of Physics, University of Pisa, Largo B. Pontecorvo 3, I-56127 Pisa, Italy
| | - Matteo Calandra
- Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy
| | - Michele Ortolani
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
| | - Christoph Stampfer
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Francesco Mauri
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
| | - Leonetta Baldassarre
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, I-00185 Rome, Italy
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Poncé S, Royo M, Gibertini M, Marzari N, Stengel M. Accurate Prediction of Hall Mobilities in Two-Dimensional Materials through Gauge-Covariant Quadrupolar Contributions. PHYSICAL REVIEW LETTERS 2023; 130:166301. [PMID: 37154627 DOI: 10.1103/physrevlett.130.166301] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 01/24/2023] [Accepted: 04/03/2023] [Indexed: 05/10/2023]
Abstract
Despite considerable efforts, accurate computations of electron-phonon and carrier transport properties of low-dimensional materials from first principles have remained elusive. By building on recent advances in the description of long-range electrostatics, we develop a general approach to the calculation of electron-phonon couplings in two-dimensional materials. We show that the nonanalytic behavior of the electron-phonon matrix elements depends on the Wannier gauge, but that a missing Berry connection restores invariance to quadrupolar order. We showcase these contributions in a MoS_{2} monolayer, calculating intrinsic drift and Hall mobilities with precise Wannier interpolations. We also find that the contributions of dynamical quadrupoles to the scattering potential are essential, and that their neglect leads to errors of 23% and 76% in the room-temperature electron and hole Hall mobilities, respectively.
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Affiliation(s)
- Samuel Poncé
- Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain, Chemin des Étoiles 8, B-1348 Louvain-la-Neuve, Belgium
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Miquel Royo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/a, I-41125 Modena, Italy
- Centro S3, Istituto Nanoscienze-CNR, Via Campi 213/a, I-41125 Modena, Italy
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Massimiliano Stengel
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys, 23, 08010 Barcelona, Spain
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Macheda F, Barone P, Mauri F. Electron-Phonon Interaction and Longitudinal-Transverse Phonon Splitting in Doped Semiconductors. PHYSICAL REVIEW LETTERS 2022; 129:185902. [PMID: 36374700 DOI: 10.1103/physrevlett.129.185902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2022] [Revised: 06/17/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
We study the effect of doping on the electron-phonon interaction and on the phonon frequencies in doped semiconductors, taking into account the screening in the presence of free carriers at finite temperature. We study the impact of screening on the Fröhlich-like vertex and on the long-range components of the dynamical matrix, going beyond the state-of-the-art description for undoped crystals, thanks to the development of a computational method based on maximally localized Wannier functions. We apply our approach to cubic silicon carbide, where in the presence of doping the Fröhlich coupling and the longitudinal-transverse phonon splitting are strongly reduced, thereby influencing observable properties such as the electronic lifetime.
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Affiliation(s)
- Francesco Macheda
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy
| | - Paolo Barone
- CNR-SPIN, Area della Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, I-00133 Rome, Italy
- Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, 00185 Roma, Italy
| | - Francesco Mauri
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy
- Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, 00185 Roma, Italy
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