Zone-Folded Longitudinal Acoustic Phonons Driving Self-Trapped State Emission in Colloidal CdSe Nanoplatelet Superlattices

Induced Huge Optical Activity in Nanoplatelet Superlattice

Chiral superstructures with unique chiroptical properties that are not inherent in the individual units are essential in applications such as 3D displays, spintronic devices, biomedical sensors, and beyond. Generally, chiral superstructures are obtained by tedious procedures exploring various physical and chemical forces to break spatial symmetry during the self-assembly of discrete nanoparticles. In contrast, we herein present a simple and efficient approach to chiral superstructures by intercalating small chiral molecules into preformed achiral superstructures. As a model system, the chiral CdSe nanoplatelet (NPL) superlattice exhibits a giant and tunable optical activity with the highest g-factor reaching 3.09 × 10-2 to the excitonic transition of the NPL superlattice, nearly 2 orders of magnitude higher than that of the corresponding separated chiral NPLs. The theoretical analysis reveals that the chiral deformation in the NPL superlattice induced by the chiral perturbation of the small chiral molecules is critical to the observed huge optical activity. We anticipate that this research lays a foundation for understanding and applying chiral inorganic nanosystems.

Organic Ligand Engineering for Tailoring Electron-Phonon Coupling in 2D Hybrid Perovskites

In the emerging two-dimensional organic-inorganic hybrid perovskites, the electronic structures and carrier behaviors are strongly impacted by intrinsic electron-phonon interactions, which have received inadequate attention. In this study, we report an intriguing phenomenon of negative carrier diffusion induced by electron-phonon coupling in (2T)2PbI4. Theoretical calculations reveal that the electron-phonon coupling drives the band alignment in (2T)2PbI4 to alternate between type I and type II heterostructures. As a consequence, photoexcited holes undergo transitions between the organic ligands and inorganic layers, resulting in abnormal carrier transport behavior compared to other two-dimensional hybrid perovskites. These findings provide valuable insights into the role of electron-phonon coupling in shaping the band alignments and carrier behaviors in two-dimensional hybrid perovskites. They also open up exciting avenues for designing and fabricating functional semiconductor heterostructures with tailored properties.

Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride

Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emissions. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.

Lead-Free Chiral Perovskite for High Degree of Circularly Polarized Light Emission and Spin Injection

We report a zero-dimensional (0D) lead-free chiral perovskite (S-/R-MBA)4Bi2I10 with a high degree of circularly polarized light (CPL) emission. Our 0D lead-free chiral perovskite exhibits an average degree of circular polarization (DOCP) of 19.8% at 78 K under linearly polarized laser excitation, and the maximum DOCP can reach 25.8%, which is 40 times higher than the highest DOCP of 0.5% in all reported lead-free chiral perovskites to the best of our knowledge. The high DOCP of (S-/R-MBA)4Bi2I10 is attributed to the free exciton emission with a Huang-Rhys factor of 2.8. In contrast, all the lead-free chiral perovskites in prior reports are dominant by self-trapped exciton in which the spin relaxation reduces DOCP dramatically. Moreover, we realize the manipulation of the valley degree of freedom of monolayer WSe2 by using the spin injection of the 0D chiral lead-free perovskites. Our results provide a new perspective to develop lead-free chiral perovskite devices for CPL light source, spintronics, and valleytronics.

Unveiling sub-bandgap energy-level structures on machined optical surfaces based on weak photo-luminescence

Sub-bandgap defect energy levels (SDELs) introduced by the point defects located in surface defect areas are considered the main factors in decreasing laser-induced damage thresholds (LIDTs). The suppression of SDELs could greatly increase LIDTs. However, no available method could detect SDELs, limiting the characterization and suppression of SDELs. Herein, a self-designed photo-luminescence detection system is developed to explore the weak transient-steady photo-luminescence properties of machined surfaces. Based on the excitation laser wavelength dependence of photo-luminescence properties, a sub-bandgap energy-level structure (SELS) containing SDELs is unveiled for the first time. Based on the developed mathematical model for predicting LIDTs, the feasibility of the detection method was verified. In summary, this work provides a novel approach to characterize SDELs on machined surfaces. This work could construct electronic structures and explore the transition behaviors of electrons, which is vital to laser-induced damage. Besides, this work could predict the LIDTs of the machined surfaces based on their PL properties, which provides convenience for evaluating the LIDTs of various optical elements in industrial production. Moreover, this work provides a convenient method for raising the LIDTs of various optical elements through monitoring and suppressing the SDELs on machined surfaces.

Carriers, Quasi-particles, and Collective Excitations in Halide Perovskites

Halide perovskites (HPs) are potential game-changing materials for a broad spectrum of optoelectronic applications ranging from photovoltaics, light-emitting devices, lasers to radiation detectors, ferroelectrics, thermoelectrics, etc. Underpinning this spectacular expansion is their fascinating photophysics involving a complex interplay of carrier, lattice, and quasi-particle interactions spanning several temporal orders that give rise to their remarkable optical and electronic properties. Herein, we critically examine and distill their dynamical behavior, collective interactions, and underlying mechanisms in conjunction with the experimental approaches. This review aims to provide a unified photophysical picture fundamental to understanding the outstanding light-harvesting and light-emitting properties of HPs. The hotbed of carrier and quasi-particle interactions uncovered in HPs underscores the critical role of ultrafast spectroscopy and fundamental photophysics studies in advancing perovskite optoelectronics.

2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration

The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.

Self-trapped excitons in soft semiconductors

Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing properties and potential optoelectronic applications. STEs are formed from the lattice distortion induced by the strong electron (exciton)-phonon coupling in soft semiconductors upon photoexcitation, which features in broadband photoluminescence (PL) emission spectra with a large Stokes shift. Recently, significant progress has been achieved in this field but many remain challenges that need to be solved, including the understanding of the underlying physical mechanism, tuning of the performance, and device applications. Along these lines, for the first time, systematic experimental characterizations and advanced theoretical calculations are presented in this review to shed light on the physical mechanism. The possibility of tuning the STEs through multiple degrees of freedom is also presented, along with an overview of the STE-based emerged applications and future research perspectives.

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Yellow-green luminescence (YGL) competes with near-bandgap emission (NBE) for carrier recombination channels, thereby reducing device efficiency; yet uncovering the origin of YGL remains a major challenge. In this paper, nearly stress-free and low dislocation density self-assembled GaN microdisks were synthesized by Na-flux method. The YGL of GaN microdisks highly depend on their polar facets. Variable accelerating voltage/power CL, variable temperature PL, and Raman spectroscopy are further performed to clarify the origin of polarity dependence of GaN microdisk YGL behavior, which indicates its independence of dislocations, surface effects, stress, crystalline quality, and gallium vacancies. It was found that the incorporation ability of carbon impurities in the polar (0001) facet is greater than that in the semipolar (101̅1) facets, producing higher content of C_N or C_NO_N defects, resulting in a more pronounced YGL in the polar (0001) facet of GaN.