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Song M, Polakovic T, Lim J, Cecil TW, Pearson J, Divan R, Kwok WK, Welp U, Hoffmann A, Kim KJ, Novosad V, Li Y. Single-shot magnon interference in a magnon-superconducting-resonator hybrid circuit. Nat Commun 2025; 16:3649. [PMID: 40246844 PMCID: PMC12006324 DOI: 10.1038/s41467-025-58482-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2024] [Accepted: 03/24/2025] [Indexed: 04/19/2025] Open
Abstract
Magnon interference is a hallmark of coherent magnon interactions. In this work, we demonstrate single-shot magnon interference using up to four magnon pulses in two remotely coupled yttrium iron garnet spheres mediated by a coplanar superconducting resonator. By exciting one YIG sphere with injected microwave pulses, we achieve coherent energy exchange between the two spheres, facilitating their interference processes, including Rabi-like oscillation with a single pulse, constructive and destructive interference with two pulses, and interference peak sharpening with up to four pulses-analogous to diffraction grating in optical interference. The resulting interference patterns can be precisely controlled by changing the frequency detuning and time delay of the magnon pulses. The demonstration of time-domain coherent control of remote magnon interference opens new pathways for advancing coherent information processing through multi-operation, circuit-integrated hybrid magnonic networks.
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Affiliation(s)
- Moojune Song
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Tomas Polakovic
- Physics Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jinho Lim
- Department of Materials Science and Engineering and Materials Research Laboratory, Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Thomas W Cecil
- High Energy Physics Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - John Pearson
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Ralu Divan
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Wai-Kwong Kwok
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ulrich Welp
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Axel Hoffmann
- Department of Materials Science and Engineering and Materials Research Laboratory, Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA.
| | - Kab-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea.
| | - Valentine Novosad
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
| | - Yi Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
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Nishitani Y, Kaneko Y, Sekiguchi K. Magnetic field detection with single mode spin wave interference in asymmetric structure. Sci Rep 2025; 15:5653. [PMID: 39955317 PMCID: PMC11830009 DOI: 10.1038/s41598-025-89367-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2024] [Accepted: 02/05/2025] [Indexed: 02/17/2025] Open
Abstract
The magnetic field detection based on the interference phenomenon of surface-mode spin waves has been demonstrated in yttrium iron garnet (YIG) thin films, where the asymmetric arrangement of two excitation sources and one detection antenna allows for the field detection with a simple YIG strip structure that does not require microfabrication. The magnetic field can be detected by observing changes in the amplitude of the standing wave at the detection position, which result from alterations in the wavenumber of the excited spin wave caused by variations in the magnetic field. Time-domain measurements confirmed that the interference signal of the spin wave changed with the magnetic field. The induced electromotive force yielded a change of approximately 7 mV for a magnetic field change of ± 0.13 mT, resulting in a sensitivity of 24-25 V/T. The sinusoidal interference calculation using the wavenumber change due to a small magnetic field derived from the dispersion relation of spin waves agrees with the experimental results. This suggests that the mechanism of magnetic field detection is the wavenumber change due to the magnetic field.
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Affiliation(s)
- Yu Nishitani
- Technology Division, Panasonic Holdings Corporation, 3-1-1, Yagumonakamachi, Moriguchi, 570-8501, Osaka, Japan.
| | - Yukihiro Kaneko
- Technology Division, Panasonic Holdings Corporation, 3-1-1, Yagumonakamachi, Moriguchi, 570-8501, Osaka, Japan
| | - Koji Sekiguchi
- School of Engineering Science, Yokohama National University, 79-5 Tokiwadai, Yokohama, 240- 8501, Japan
- Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Yokohama, 240-8501, Japan
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Xue K, Victora RH. High data rate spin-wave transmitter. Sci Rep 2024; 14:23129. [PMID: 39367111 PMCID: PMC11452394 DOI: 10.1038/s41598-024-73957-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Accepted: 09/23/2024] [Indexed: 10/06/2024] Open
Abstract
Spin-wave devices have recently become a strong competitor in computing and information processing owing to their excellent energy efficiency. Researchers have explored magnons, the quanta of spin-waves, as an information carrier and significant progress has occurred in both excitation and computation. However, most transmission designs remain immature in terms of data rate and information complexity as they only utilize simple spin-wave pulses and suffer from signal distortion. In this work, using micromagnetic simulations, we demonstrate a spin-wave transmitter that operates reliably at a data rate of 4 Gbps over significant (multi-micron) distances with error rates as low as 10-14. Spin-wave amplitude is used to encode information. Carrier frequency and data rate are carefully chosen to restrict dispersion spreading, which is the main reason for signal distortion. We show that this device can be integrated into either pure-magnonic circuits or modern electronic networks. Our study reveals the potential for achieving an even higher data rate of 10 Gbps and also offers a comprehensive and logical methodology for performance tuning.
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Affiliation(s)
- Kun Xue
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - R H Victora
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
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Wang YZ, Zhang TY, Dong J, Chen P, Yu GQ, Wan CH, Han XF. Voltage-Controlled Magnon Transistor via Tuning Interfacial Exchange Coupling. PHYSICAL REVIEW LETTERS 2024; 132:076701. [PMID: 38427900 DOI: 10.1103/physrevlett.132.076701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 09/28/2023] [Accepted: 01/11/2024] [Indexed: 03/03/2024]
Abstract
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics, which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage (V_{g}) applied on a nonmagnetic metal and magnetic insulator (MI) interface that bent the energy band of the MI and then modulated the probability for conduction electrons in the nonmagnetic metal to tunnel into the MI, which can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt-Y_{3}Fe_{5}O_{12}-Pt sandwich was then experimentally realized with V_{g} modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at ±V_{g}) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.
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Affiliation(s)
- Y Z Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - T Y Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - J Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - P Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - G Q Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - C H Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - X F Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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