Electric-Field Tunable Magnetism in van der Waals Bilayers with A-Type Antiferromagnetic Order: Unipolar versus Bipolar Magnetic Semiconductor

High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe

The emerging two-dimensional (2D) Janus systems with broken symmetry provide a new platform for designing ultrathin multifunctional spintronic materials. Recently, based on experimental monolayer MnSe2, ferromagnetism was predicted in Janus MnXY (X ≠ Y = S, Se, Te) monolayers; however, they exhibit low Curie temperatures and small magnetic anisotropic energies. To improve the Curie temperature and magnetic anisotropy, herein, we systemically explore the stability and electronic and magnetic properties of Janus MnSeTe and MnSTe monolayers under strain and carrier-doping using first-principles calculations and Monte Carlo simulations. It is found that both MnSeTe and MnSTe monolayers possess robustly high spin polarization with rational strain and carrier-doping. Both tensile strain and hole doping strengthen the ferromagnetic super-exchange interactions of the two nearest Mn atoms mediated by chalcogen atoms and exceedingly improve the perpendicular magnetic anisotropic energies (by up to 3.1 meV per f.u. for MnSeTe and 2.0 meV per f.u. for MnSTe). The Te-5p intraorbital hybridizations contributed to the main magnetic anisotropy. More remarkably, the tensile strain and hole doping collectively increase the Curie temperatures of MnSeTe and MnSTe to above and near room temperature (345 and 290 K, respectively). The present study reveals that Janus MnSeTe and MnSTe monolayers with robustly high spin polarization, room-temperature ferromagnetism and large perpendicular magnetic anisotropy are promising candidates for ultrathin multifunctional spintronic materials. This study will be of great interest for further experimental and theoretical explorations of 2D Janus manganese dichalcogenides.

Electric Field-Controlled Magneto-Optical Kerr Effect in A-Type Antiferromagnetic Fe2CX2 (X = F, Cl) and Its Janus Monolayer

The magneto-optical Kerr effect (MOKE) is a powerful probe of magnetism and has recently gained new attention in antiferromagnetic (AFM) materials. Through extensive first-principles calculations and group theory analysis, we have identified Fe2CX2 (X = F, Cl) and Janus Fe2CFCl monolayers as ideal A-type collinear AFM materials with high magnetic anisotropy and Néel temperatures. By applying a vertical external electrical field (Ef) of 0.2 V/Å, the MOKE is activated for Fe2CF2 and Fe2CCl2 monolayers without changing their magnetic ground state, and the maximum Kerr rotation angles are 0.13 and 0.08°, respectively. Due to the out-of-plane spontaneous polarization, the intrinsic and nonvolatile MOKE is found in the Janus Fe2CFCl monolayer and the maximal Kerr rotation angle without external electronic field is 0.25°. Moreover, the intrinsic built-in electronic field also gives origin to more robust A-type AFM ordering and reversible Kerr angle against external Ef. Our study suggests that Ef is an effective tool for controlling MOKE in two-dimensional (2D) AFM materials. This research opens the possibility of related studies and applications in AFM spintronics.

Ultrafast Laser Control of Antiferromagnetic-Ferrimagnetic Switching in Two-Dimensional Ferromagnetic Semiconductor Heterostructures

Realizing ultrafast control of magnetization switching is of crucial importance for information processing and recording technology. Here, we explore the laser-induced spin electron excitation and relaxation dynamics processes of CrCl₃/CrBr₃ heterostructures with antiparallel (AP) and parallel (P) systems. Although an ultrafast demagnetization of CrCl₃ and CrBr₃ layers occurs in both AP and P systems, the overall magnetic order of the heterostructure remains unchanged due to the laser-induced equivalent interlayer spin electron excitation. More crucially, the interlayer magnetic order switches from antiferromagnetic (AFM) to ferrimagnetic (FiM) in the AP system once the laser pulse disappears. The microscopic mechanism underpinning this magnetization switching is dominated by the asymmetrical interlayer charge transfer combined with a spin-flip, which breaks the interlayer AFM symmetry and ultimately results in an inequivalent shift in the moment between two FM layers. Our study opens up a new idea for ultrafast laser control of magnetization switching in two-dimensional opto-spintronic devices.

Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Two-dimensional (2D) antiferromagnets have drawn great interest for absence of stray fields in antiferromagnetic (AFM) spintronics. However, it remains challenging to manipulate their spin polarization above room temperature for practical applications. Herein, a general strategy is reported to realize the control of spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on first-principles calculations, exemplified by transition metal monohalide MnCl and carbide MXenes Cr₂CX₂ (X = F, Cl, OH). It shows that 100% spin polarization can be induced around Fermi level with spin splitting gap related to the spatial distribution of spin density in real space. Meanwhile, the Neél temperature of 2D MnCl and Cr₂CF₂ remains above room temperature under external electric field up to 0.6 V/Å. This study exhibits the potential for application of 2D AFM semiconductors in electric-field-controlled spintronics.

Two-Dimensional Quaternary Transition Metal Sulfide CrMoA2S6 (A = C, Si, or Ge): A Bipolar Antiferromagnetic Semiconductor with a High Néel Temperature

Bipolar antiferromagnetic semiconductors (BAFSs) make up a class of spintronic materials, holding great promise for the manipulation of spin-polarized currents simply upon application of a voltage gate, but only a few two-dimensional (2D) BAFSs with a high Néel temperature (T_N) have been reported. Here, we report a family of magnetic quaternary MM'A₂S₆ (M = V, Cr, Mn, or Fe; M' = Nb, Mo, Tc, or Ru; A = C, Si, Ge, or Sn) nanosheets by isovalent alloying layered transitional metal trisulfides (MAS₃) based on first-principles calculations. Our results show that 2D CrMoA₂S₆ (A = C, Si, or Ge) nanosheets are BAFSs with band gaps ranging from 1.89 to 2.23 eV. Among them, 2D CrMoC₂S₆ has the highest T_N of 556 K with robust magnetism against carrier doping and external in-plane strain due to a strong delocalization superexchange interaction between the Cr³⁺ and Mo³⁺ cations. This study establishes that CrMoC₂S₆ is an ideal prototype platform for realizing electric control of spin polarization in 2D materials.

Enhanced Curie Temperature of Two-Dimensional Cr(II) Aromatic Heterocyclic Metal-Organic Framework Magnets via Strengthened Orbital Hybridization

Two-dimensional (2D) metal-organic frameworks (MOFs) with room-temperature magnetism are highly desirable but challenging due to the weak superexchange interaction between metal atoms. For this purpose, strengthening the hybridization between metal ion and organic linkage presents an experiment-feasible chemical solution to enhance the Curie temperature. Here, we report three 2D Cr(II) aromatic heterocyclic MOF magnets with enhanced Curie temperature by bridging Cr(II) ions with pyrazine, 1,4-diphosphinine, and 1,4-diarsenin linkers, i.e., Cr(pyz)₂, Cr(diphos)₂, and Cr(diarse)₂, and using first-principles calculations. Our results show that Cr(pyz)₂, Cr(diphos)₂, and Cr(diarse)₂ are ferrimagnetic semiconductors. In particular, the Curie temperature of Cr(pyz)₂ is estimated to be about 344 K and could be enhanced to 512 and 437 K in Cr(diphos)₂ and Cr(diarse)₂ by strengthening the hybridization between Cr ions and organic linkers via d-π* direct exchange interaction. This study presents a prototype to obtain room-temperature magnetism in 2D Cr(II)-based MOF magnets for nanoscale spintronics applications.

VSi2P4/FeCl2 van der Waals heterostructure: A two-dimensional reconfigurable magnetic diode

The reconfigurable magnetic tunnel diode has recently been proposed as a promising approach to decrease the base collector leakage currents. However, conventional bulk interfaces usually suffer from strong Fermi level...

Tuning magnetism at the two-dimensional limit: a theoretical perspective

The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.