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Geng WR, Guo X, Zhu YL, Ma D, Tang YL, Wang YJ, Wu Y, Hong Z, Ma XL. Observation of multi-order polar radial vortices and their topological transition. Nat Commun 2025; 16:2804. [PMID: 40118847 PMCID: PMC11928551 DOI: 10.1038/s41467-025-58008-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2024] [Accepted: 03/10/2025] [Indexed: 03/24/2025] Open
Abstract
Topological states have garnered enormous interest in both magnetic and ferroelectric materials for promising candidates of next-generation information carriers. Especially, multi-order topological structures with modulative topological charges are promising for multi-state storage. Here, by engineering boundary conditions, we directly observe the self-assembly two-order ferroelectric radial vortices in high-density BiFeO3 nanostructures. The as-observed two-order radial vortex features a doughnut-like out-of-plane polarization distribution and four-quadrant in-plane distribution, with the topological charge of Q = 0. Systematic dimensional control of the BiFeO3 nanostructures reveals size-dependent stabilization of distinct topological states, from elementary one-order to complex three-order radial vortices, which is further rationalized by phase-field simulations. The transition between different topological states with various topological charges is also realized under an external electric field. This study opens up an avenue for generating configurable polar topological states, offering potential advancements in designing high-performance multi-state memory devices.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Xiangwei Guo
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Hunan University of Science and Technology, Xiangtan, 411201, China
| | - Desheng Ma
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14850, USA
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yongjun Wu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Zijian Hong
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area (Guangdong), Shenzhen, 510290, China.
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Geng WR, Zhu YL, Zhu MX, Tang YL, Zhao HJ, Lei CH, Wang YJ, Wang JH, Jiang RJ, Liu SZ, San XY, Feng YP, Zou MJ, Ma XL. Dipolar wavevector interference induces a polar skyrmion lattice in strained BiFeO 3 films. NATURE NANOTECHNOLOGY 2025; 20:366-373. [PMID: 39821139 DOI: 10.1038/s41565-024-01845-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 12/04/2024] [Indexed: 01/19/2025]
Abstract
Skyrmions can form regular arrangements, so-called skyrmion crystals (SkXs). A mode with multiple wavevectors q then describes the arrangement. While magnetic SkXs, which can emerge in the presence of Dzyaloshinskii-Moriya interaction, are well established, polar skyrmion lattices are still elusive. Here we report the observation of polar SkXs with a well-defined double-q state in ultrathin BiFeO3 films on LaAlO3. The compressive strain induced by the LaAlO3 substrate yields a dipolar topological texture with a periodic arrangement of skyrmions. The square-like superstructure with a lattice constant of 2.68 nm features a periodic modulation of polarization fields and topological charge density. The film furthermore exhibits an enhanced electromechanical response with an increased converse piezoelectric coefficient (d33) compared with SkX-free films. Transmission electron microscopy experiments in combination with phase-field simulations indicate that the dipole skyrmion texture results from the interference of two orthogonal single-q dipole patterns. We anticipate that the interference of multiple wavevectors may lead to a diversity of topological crystals with a variety of symmetries and lattice constants.
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Affiliation(s)
- W R Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China
| | - Y L Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Hunan University of Science and Technology, Xiangtan, China
| | - M X Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Y L Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - H J Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, China
| | - C H Lei
- Department of Physics and Engineering, University of Scranton, Scranton, PA, USA
| | - Y J Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - J H Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - R J Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - S Z Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - X Y San
- Hebei Key Laboratory of Optic-electronic Information and Materials, The College of Physics Science and Technology, Hebei University, Baoding, China
| | - Y P Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China
| | - M J Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China
| | - X L Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area (Guangdong), Shenzhen, China.
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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Microstructure and physical properties of ε-Fe2O3 thin films fabricated by pulsed laser deposition. Micron 2022; 163:103359. [DOI: 10.1016/j.micron.2022.103359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/23/2022] [Accepted: 09/26/2022] [Indexed: 11/17/2022]
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Geng WR, Guo X, Ge HL, Tang YL, Zhu Y, Wang Y, Wu B, Zou MJ, Feng YP, Ma XL. Real-Time Transformation of Flux-Closure Domains with Superhigh Thermal Stability. NANO LETTERS 2022; 22:8892-8899. [PMID: 36331549 DOI: 10.1021/acs.nanolett.2c02969] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Polar topologies have received extensive attention due to their exotic configurations and functionalities. Understanding their responsive behaviors to external stimuli, especially thermal excitation, is highly desirable to extend their applications to high temperature, which is still unclear. Here, combining in situ transmission electron microscopy and phase-field simulations, the thermal dynamics of the flux-closure domains were illuminated in PbTiO3/SrTiO3 multilayers. In-depth analyses suggested that the topological transition processes from a/c domains to flux-closure quadrants were influenced by the boundary conditions of PbTiO3 layers. The symmetrical boundary condition stabilized the flux-closure domains at higher temperature than in the asymmetrical case. Furthermore, the reversible thermal responsive behaviors of the flux-closure domains displayed superior thermal stability, which maintained robust up to 450 °C (near the Curie temperature). This work provides new insights into the dynamics of polar topologies under thermal excitation and facilitates their applications as nanoelectronics under extreme conditions.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiangwei Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Hua-Long Ge
- School of Materials and Energy, Yunnan University, Kunming, 650091, People's Republic of China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Yinlian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
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Feng YP, Jiang RJ, Zhu YL, Tang YL, Wang YJ, Zou MJ, Geng WR, Ma XL. Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO 3 films. RSC Adv 2022; 12:20423-20431. [PMID: 35919158 PMCID: PMC9280779 DOI: 10.1039/d2ra03584g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 06/30/2022] [Indexed: 12/02/2022] Open
Abstract
High-index perovskite ferroelectric thin films possess excellent dielectric permittivity, piezoelectric coefficient, and exotic ferroelectric switching properties. They also exhibit complications in the ferroelastic domains, misfit dislocations, and strain-relaxation behaviors. Exploring the relationship of the ferroelastic domains and misfit dislocations may be of benefit for promoting the high-quality growth of these thin films. Here, the strain field of the ferroelastic domains and misfit dislocations in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 epitaxial thin films were investigated by advanced aberration-corrected (scanning) transmission electron microscopy (TEM) combined with geometry phase analysis (GPA). Two types of misfit dislocations with projected Burgers vectors of a[001] or a[100] on the (010) plane were elucidated, whose strain fields included in-plane strain and lattice rotation coupled with the c domains above them. Besides, it was demonstrated that the coupling was kept inside the PbTiO3 films when the film thickness was increased. Furthermore, the polarization rotation was observed in both narrow c domains and around the misfit dislocation cores, which may be attributed to the flexoelectric effect. These results are expected to provide useful information for understanding the nucleation and propagation mechanism of ferroelastic domains and for further modifying the growth of high-index ferroelectric thin films. The strain coupling of misfit dislocations and ferroelastic domains is revealed in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 films and flexoelectric-induced polarization rotation is observed around the misfit dislocation cores.![]()
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Affiliation(s)
- Y. P. Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - R. J. Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Y. L. Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Y. L. Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Y. J. Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - M. J. Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - W. R. Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - X. L. Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou 730050, China
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