1
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Liu S, Zerhoch J, Heindl MW, Zhang C, Kodalle T, Sun K, Shcherbakov A, Bodnar S, Miah M, Gholipoor M, Jandl C, Pöthig A, Ballmann J, Sharp ID, Müller-Buschbaum P, Sutter-Fella CM, Paetzold UW, Deschler F. Orientation-Driven Chirality Funnels in Chiral Low-Dimensional Lead-Halide Perovskite Heterostructures. J Am Chem Soc 2025; 147:16681-16693. [PMID: 40302536 DOI: 10.1021/jacs.5c05172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2025]
Abstract
Chiral hybrid metal-halide perovskites show low-symmetry crystal structures, large Rashba splitting, spin-filtering, and strong chiroptical activity. Circular dichroism and circularly polarized photoluminescence have been investigated in chiral perovskites with increasingly distorted chiral structures. Here, we report the fabrication of chiral (R/S)-EBAPbI3 (EBA = α-ethylbenzylamine) single crystals, which possess highly distorted octahedral structures with a high angle variance value of ∼68 degree2. Using control in the fabrication conditions, we transfer chiral single crystals to thin films and achieve different crystal orientation preferences that induce tunable chiroptical properties to their heterostructures with PbI2 nanodomains, which we characterize with in situ X-ray diffraction and grazing-incidence wide-angle X-ray scattering measurements. Using transient chiroptical spectroscopies, we resolve photoexcited charge carrier dynamics and chirality transfer processes in such heterostructures down to cryogenic temperatures. We observe rapid carrier transfer along the in-plane (002) facets in chiral perovskite phases to PbI2 nanostructures within the initial few picoseconds, while carrier transfer along the out-of-plane (002) facets occurs at a slower rate. This fast transfer process leads to high photoluminescence intensities and large degrees of circular polarization in the emission from PbI2 nanodomains at cryogenic temperatures. Our findings report a multidimensional chiral-achiral heterostructure which takes advantage of controllable chirality transfer and offers new routes for future spintronic and chiroptical applications.
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Affiliation(s)
- Shangpu Liu
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Department of Physics, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Jonathan Zerhoch
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Department of Physics, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Markus W Heindl
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Department of Physics, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Chaoran Zhang
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore, Singapore
- Chemistry Department, TUM School of Natural Sciences, Technical University of Munich, Lichtenbergstraße 4, 85748 Garching, Germany
| | - Tim Kodalle
- Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, California 94720, United States
| | - Kun Sun
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
| | - Andrii Shcherbakov
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
- Walter Schottky Institute and Department of Physics, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Stanislav Bodnar
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
| | - Milon Miah
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
| | - Mohammad Gholipoor
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Christian Jandl
- Chemistry Department, TUM School of Natural Sciences, Technical University of Munich, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Technical University of Munich, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
| | - Alexander Pöthig
- Chemistry Department, TUM School of Natural Sciences, Technical University of Munich, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Technical University of Munich, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
| | - Joachim Ballmann
- Anorganisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 276, 69120 Heidelberg, Germany
| | - Ian D Sharp
- Walter Schottky Institute and Department of Physics, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
| | - Peter Müller-Buschbaum
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
| | - Carolin M Sutter-Fella
- Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, California 94720, United States
| | - Ulrich W Paetzold
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
| | - Felix Deschler
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany
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2
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Dryzhakov B, Tang Y, Keum J, Ambaye H, Kim J, Lee TW, Lauter V, Hu B. Spin switchable optical phenomena in Rashba band structures through intersystem crossing in momentum space in solution-processing 2D-superlattice perovskite film. Nat Commun 2025; 16:4247. [PMID: 40335516 PMCID: PMC12059043 DOI: 10.1038/s41467-025-57834-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 03/05/2025] [Indexed: 05/09/2025] Open
Abstract
Spin-switchable phenomena are a critical element for the development of spintronic and chiroptic devices. Herein we combine a 2D-superlattice perovskite (4,4-DFPD2PbI4) film with a ferromagnetic cobalt (Co) layer to form a multiferroic perovskite/Co interface, and demonstrate spin-switchable circularly polarized luminescence (CPL) between right-handed σ+ and left-handed σ- polarizations. When the ferromagnetic spins of Co at the Co/perovskite interface are altered between positive and negative magnetic field directions, the CPL from the 2D-superlattice perovskite switches from σ+ to σ- polarization. The magnetic field effects present a unique method to confirm that CPL is generated by the circular-orbital momentum of light-emitting excitons within Rashba band structures, eliminating artifacts involving structural birefringence. Our polarized neutron reflectometry measurements confirm a super long-range spin-orbit interaction occurring in the 2D-superlattice perovskite films. The temperature dependence of spin-switchable phenomenon indicates an extraordinarily long orbital polarization lifetime, reaching microseconds at room temperature and milliseconds at 5 K.
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Affiliation(s)
- Bogdan Dryzhakov
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
| | - Yipeng Tang
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
| | - Jong Keum
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, USA
- Center for Nanophase Materials Sciences, Oak Ridge, TN, USA
| | - Haile Ambaye
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Jinwoo Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Valeria Lauter
- Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Bin Hu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA.
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3
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Pan J, Wang J, Zhou D, Hang Y, Su Y, Wang S, Mao Z, Feng L, Yang S, Liu C, Yin Y, Lv Y, Zhang J, Wang L. Electrical Control of Perovskite Light Emission by Integration into a Two-Dimensional Transistor. NANO LETTERS 2025; 25:7069-7074. [PMID: 40241477 DOI: 10.1021/acs.nanolett.5c01010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2025]
Abstract
Perovskites have emerged as a rising material category for highly efficient light emission, the electrical control of which is crucial for practical applications. However, achieving efficient, precise, wide-range, and rich control remains challenging due to their inherently poor electrical conductivity. In this work, we demonstrate the integration of two-dimensional (2D) transistors to assist the electrical control of perovskite light-emission. The implementation of a 2D channel with tunable electronic properties and strong interfacial coupling provides an effective bridge between electrical control and light emission of perovskite. The photoluminescence (PL) can be efficiently modulated with a small bias voltage of just 0.2 V, achieving a modulation efficiency of ∼87% per voltage. Furthermore, the PL enhancement can reach up to ∼700% with the assistance of gate voltage. This study underscores the promise of 2D transistors as a low-power, high-efficiency, and highly integrated platform for tailoring the optoelectronic properties of perovskites.
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Affiliation(s)
- Jie Pan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Jieyu Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Dawei Zhou
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China
| | - Yang Hang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Yu Su
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Zilong Mao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Linbo Feng
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Shuai Yang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Chao Liu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China
| | - Yao Yin
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Junran Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 210009, China
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4
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Xu Y, Li J, Xu W, Fan X, Yang S, Yin Y, Zhu J, Zhou D, Feng L, Zha C, Wang X, Lv Y, Wang L. Elucidating Interfacial Carrier Transfer Dynamics for Circularly Polarized Emission in Self-Assembled Perovskite Heterostructures. ACS NANO 2025; 19:15030-15039. [PMID: 40204749 DOI: 10.1021/acsnano.5c01450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2025]
Abstract
By integrating carrier transfer with spin-selectivity in mixed-dimensional perovskites heterostructures (HSs), exceptional chiroptical behaviors can be activated, offering avenues for advanced applications in spintronics and quantum information technologies. However, the critical role of interface effects in this photophysical process remains insufficiently explored. We demonstrate the fabrication of self-assembled chiral 2D/achiral nanocrystal (NC) HSs with different morphologies and chiroptical activities. Using femtosecond transient reflection spectroscopy, the underlying interface-dependent carrier transfer was unraveled. Spin-polarized holes generated in the chiral 2D component can transfer within an ultrafast time scale of ∼362 fs across the coherent heterointerface, inducing circularly polarized luminescence (CPL) in the intrinsically achiral NCs with a high Pc of ∼10.3%. Furthermore, interfacial halide exchange can be utilized to extend the CPL wavelength from green to near-infrared. Our findings reveal the correlation between interfacial properties, charge transfer, and CPL activity, providing insights for the development of high-quality HSs with optimized optical properties.
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Affiliation(s)
- Yao Xu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Jian Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenheng Xu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Xinlian Fan
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Shuai Yang
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Yao Yin
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Jijie Zhu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Dawei Zhou
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China
| | - Linbo Feng
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Chenyang Zha
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yan Lv
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Lin Wang
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
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5
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Okada D, Araoka F. Magneto-chiral Nonlinear Optical Effect with Large Anisotropic Response in Two-Dimensional Halide Perovskite. Angew Chem Int Ed Engl 2024; 63:e202402081. [PMID: 38544406 DOI: 10.1002/anie.202402081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Indexed: 04/18/2024]
Abstract
The chiral organic-inorganic halide perovskites (OIHPs) are vital candidates for superior nonlinear optical (NLO) effects associated with circularly polarized (CP) light. NLO in chiral materials often couples with magnetic dipole (MD) transition, as well as the conventional electric dipole (ED) transition. However, the importance of MD transition in NLO process of chiral OIHPs has not yet been well recognized. Here, the circular polarized probe analysis of second harmonic generation circular dichroism (SHG-CD) provides the direct evidence that the contribution of MD leads to a large anisotropic response to CP lights in chiral OIHPs, (R-/S-MBACl)2PbI4. The thin films exhibit great sensitivity to CP lights over a wide wavelength range, and the g-value reaches up to 1.57 at the wavelength where the contribution of MD is maximized. Furthermore, it is also effective as CP light generator, outputting CP-SHG with maximum g-factor of 1.76 upon the stimulation of linearly polarized light. This study deepens the understanding of relation between chirality and magneto-optical effect, and such an efficient discrimination and generation of CP light signal is highly applicable for chirality-based sensor and optical communication devices.
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Affiliation(s)
- Daichi Okada
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Fumito Araoka
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
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6
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Hu J, Wen X, Yang D, Chen Y, Liu Z, Li D. Lead-Free Chiral Perovskite for High Degree of Circularly Polarized Light Emission and Spin Injection. NANO LETTERS 2024; 24:1001-1008. [PMID: 38198561 DOI: 10.1021/acs.nanolett.3c04575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
We report a zero-dimensional (0D) lead-free chiral perovskite (S-/R-MBA)4Bi2I10 with a high degree of circularly polarized light (CPL) emission. Our 0D lead-free chiral perovskite exhibits an average degree of circular polarization (DOCP) of 19.8% at 78 K under linearly polarized laser excitation, and the maximum DOCP can reach 25.8%, which is 40 times higher than the highest DOCP of 0.5% in all reported lead-free chiral perovskites to the best of our knowledge. The high DOCP of (S-/R-MBA)4Bi2I10 is attributed to the free exciton emission with a Huang-Rhys factor of 2.8. In contrast, all the lead-free chiral perovskites in prior reports are dominant by self-trapped exciton in which the spin relaxation reduces DOCP dramatically. Moreover, we realize the manipulation of the valley degree of freedom of monolayer WSe2 by using the spin injection of the 0D chiral lead-free perovskites. Our results provide a new perspective to develop lead-free chiral perovskite devices for CPL light source, spintronics, and valleytronics.
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Affiliation(s)
- Junchao Hu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xinglin Wen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Dong Yang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yingying Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zeyi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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7
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Li J, Guo Z, Qin Y, Liu R, He Y, Zhu X, Xu F, He T. Rashba Effect and Spin-Dependent Excitonic Properties in Chiral Two-Dimensional/Three-Dimensional Composite Perovskite Films. J Phys Chem Lett 2023; 14:11697-11703. [PMID: 38109354 DOI: 10.1021/acs.jpclett.3c03247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Among various chiral semiconductor materials, chiral two-dimensional (2D)/three-dimensional (3D) composite perovskites (CPs) offer the benefits of strong interface asymmetry and energy transfer between 2D and 3D phases, making the chiral CPs promising for spintronic devices. Therefore, understanding their spintronic properties will be greatly important for expanding their relevant applications. In this work, we synthesized one pair of chiral 2D/3D CP films. Their Rashba effect and spin relaxation process have been investigated by polarization-dependent femtosecond transient absorption spectroscopy. Interestingly, under left- and right-handed circularly polarized light (CPL) excitation, a two-photon emission intensity difference is observed in chiral 2D/3D CP films at 298 K. This work sheds light on the spin-dependent excitonic characteristics of chiral 2D/3D CPs and confirms the feasibility of their application in near-infrared CPL detection.
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Affiliation(s)
- Junzi Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhihang Guo
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yan Qin
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Rulin Liu
- School of Science and Engineering, Chinese University of Hong Kong, Shenzhen, Shenzhen 518172, China
| | - Yejun He
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xi Zhu
- School of Science and Engineering, Chinese University of Hong Kong, Shenzhen, Shenzhen 518172, China
| | - Fuming Xu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tingchao He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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8
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Singh S, Gong W, Stevens CE, Hou J, Singh A, Zhang H, Anantharaman SB, Mohite AD, Hendrickson JR, Yan Q, Jariwala D. Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures. ACS NANO 2023; 17:7487-7497. [PMID: 37010369 DOI: 10.1021/acsnano.2c12546] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.
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Affiliation(s)
- Simrjit Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Applied Physics and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, 5612 AZ, The Netherlands
| | - Weiyi Gong
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Christopher E Stevens
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- KBR Inc., Beavercreek, Ohio 45431, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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9
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Blachowicz T, Ehrmann A. Optical Properties of Electrospun Nanofiber Mats. MEMBRANES 2023; 13:441. [PMID: 37103868 PMCID: PMC10146296 DOI: 10.3390/membranes13040441] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 04/15/2023] [Accepted: 04/17/2023] [Indexed: 06/19/2023]
Abstract
Electrospun nanofiber mats are usually applied in fields where their high specific surface area and small pore sizes are important, such as biotechnology or filtration. Optically, they are mostly white due to scattering from the irregularly distributed, thin nanofibers. Nevertheless, their optical properties can be modified and become highly important for different applications, e.g., in sensing devices or solar cells, and sometimes for investigating their electronic or mechanical properties. This review gives an overview of typical optical properties of electrospun nanofiber mats, such as absorption and transmission, fluorescence and phosphorescence, scattering, polarized emission, dyeing and bathochromic shift as well as the correlation with dielectric constants and the extinction coefficient, showing which effects may occur and can be measured by which instruments or used for different applications.
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Affiliation(s)
- Tomasz Blachowicz
- Center for Science and Education, Institute of Physics, Silesian University of Technology, 44-100 Gliwice, Poland
| | - Andrea Ehrmann
- Faculty of Engineering and Mathematics, Bielefeld University of Applied Sciences, 33619 Bielefeld, Germany
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10
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Zhou D, Zhao P, Zhang J, Jiang X, Qin S, Zhang X, Jiang R, Deng Y, Jiang H, Zhan G, Luo Y, Ma H, Wang L. Lithographic Multicolor Patterning on Hybrid Perovskites for Nano-Optoelectronic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2205227. [PMID: 36285770 DOI: 10.1002/smll.202205227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Ultrathin hybrid perovskites, with exotic properties and two-dimensional geometry, exhibit great potential in nanoscale optical and optoelectronic devices. However, it is still challenging for them to be compatible with high-resolution patterning technology toward miniaturization and integration applications, as they can be readily damaged by the organic solvents used in standard lithography processes. Here, a flexible three-step method is developed to make high-resolution multicolor patterning on hybrid perovskite, particularly achieved on a single nanosheet. The process includes first synthesis of precursor PbI2 , then e-beam lithography and final conversion to target perovskite. The patterns with linewidth around 150 nm can be achieved, which can be applied in miniature optoelectronic devices and high-resolution displays. As an example, the channel length of perovskite photodetectors can be down to 126 nm. Through deterministic vapor-phase anion exchange, a perovskite nanosheet can not only gradually alter the color of the same pattern in a wide wavelength range, but also display different colors simultaneously. The authors are optimistic that the method can be applied for unlimited perovskite types and device configurations for their high-integrated miniature applications.
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Affiliation(s)
- Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Junran Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Xiaohong Jiang
- Key Laboratory of Flexible Electronics, Shanxi Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Sichen Qin
- Key Laboratory of Flexible Electronics, Shanxi Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Xu Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Ran Jiang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Yifan Deng
- Key Laboratory of Flexible Electronics, Shanxi Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Hanjun Jiang
- Key Laboratory of Flexible Electronics, Shanxi Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Yan Luo
- Key Laboratory of Flexible Electronics, Shanxi Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Flexible Electronics, Xi'an Key Laboratory of Biomedical Materials & Engineering, Xi'an Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Huifang Ma
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing, 211816, China
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11
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Zhang Y, Li H, Geng Z, Zheng W, Quan Y, Cheng Y. Dynamically stable and amplified circularly polarized excimer emission regulated by solvation of chiral co-assembly process. Nat Commun 2022; 13:4905. [PMID: 35988006 PMCID: PMC9392786 DOI: 10.1038/s41467-022-32714-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 08/12/2022] [Indexed: 11/24/2022] Open
Abstract
Chiral supramolecular assembly has been assigned to be one of the most favorable strategies for the development of excellent circularly polarized luminescent (CPL)-active materials. Herein, we report our study of an achiral boron-containing pyrene (Py)-based chromophore (PyBO) as a circularly polarized excimer emission (CPEE) dye induced by chiral co-assemblies containing chiral binaphthyl-based enantiomers (R/S-M). Chiral co-assembly R/S-M-(PyBO)4 fresh film spin-coated from toluene solution can exhibit orderly nanofibers and strong green CPEE (λem = 512 nm, gem = ±0.45, ΦFL = 51.2 %) resulting from an achiral PyBO excimer. In contrast, only a very weak blue CPL was observed (λem = 461 nm, gem = ± 0.0125, ΦFL = 19.0 %) after 187 h due to PyBO monomer emission as spherulite growth. Interestingly, this kind of chiral co-assembly R-M-(PyBO)4-T film from tetrahydrofuran (THF) solution retains uniform morphology and affords the most stable and strongest CPEE performance (λem = 512 nm, gem = + 0.62, ΦFL = 53.3 %) after 10 days.
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Affiliation(s)
- Yuxia Zhang
- State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Hang Li
- State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Zhongxing Geng
- State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Key Laboratory of High Performance Polymer Material and Technology of Ministry of Education, Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Wenhua Zheng
- State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China.
| | - Yiwu Quan
- Key Laboratory of High Performance Polymer Material and Technology of Ministry of Education, Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China.
| | - Yixiang Cheng
- State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China.
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