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Liu H, Zhang H, Ren B, Zheng Y, Cao W, Lu Y, Nie Z, Xu F, Huang W, Zhu J. Robust Ionics Reinforced Fiber As Implantable Sensor for Early Operando Monitoring Cell Thermal Safety of Commercial Lithium-Ion Batteries. NANO LETTERS 2024; 24:2315-2321. [PMID: 38341875 DOI: 10.1021/acs.nanolett.3c04709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/13/2024]
Abstract
Commercial batteries have been largely applied in mobile electronics, electric vehicles, and scalable energy storage systems. However, thermal runaway of batteries still obstructs the reliability of electric equipment. Considering this, building upon recent investigations of energy thermal safety, commercially available organogel fiber-based implantable sensors have been developed through 3D printing technology for first operando implantable monitoring of cell temperature. The printed fibers present excellent reliability and superelasticity because of internal supramolecular cross-linking. High temperature sensitivity (-39.84% °C-1/-1.557% °C-1) within a wide range (-15 to 80 °C) is achieved, and the corresponding mechanism is clarified based on in situ temperature-dependent Raman technology. Furthermore, taking the pouch cell as an example, combined with finite element analysis, the real-time observation system of cell temperature is successfully demonstrated through an implanted sensor with wireless Bluetooth transmission. This enlightening approach paves the way for achieving safety monitoring and smart warnings for various electric equipment.
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Affiliation(s)
- Haodong Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Hongjian Zhang
- School of Flexible Electronics (SoFE) and Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou 450046, China
| | - Bing Ren
- People's Hospital of Shou County, 5 Dongjin Avenue, Huainan, 232261, China
| | - Yapeng Zheng
- State Key Laboratory of Fire Science, University of Science and Technology of China, 443 Huangshan Road, Hefei 230027, China
| | - Wei Cao
- Institute of Advanced Materials (IAM), Key Laboratory of Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yufei Lu
- School of Flexible Electronics (SoFE) and Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou 450046, China
| | - Zhentao Nie
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Feng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE), Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
- Institute of Advanced Materials (IAM), Key Laboratory of Institute of Advanced Materials, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jixin Zhu
- State Key Laboratory of Fire Science, University of Science and Technology of China, 443 Huangshan Road, Hefei 230027, China
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Bian Z, Yang Q, Yoshimura M, Cho HJ, Lee J, Jeen H, Endo T, Matsuo Y, Ohta H. Solid-State Electrochemical Thermal Transistors with Strontium Cobaltite-Strontium Ferrite Solid Solutions as the Active Layers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23512-23517. [PMID: 37134115 DOI: 10.1021/acsami.3c03660] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Thermal transistors have potential as thermal management devices because they can electrically control the thermal conductivity (κ) of the active layer. Recently, we realized solid-state electrochemical thermal transistors by utilizing the electrochemical redox reaction of SrCoOy (2 ≤ y ≤ 3). However, the guiding principle to improve the on/off κ ratio has yet to be clarified because the κ modulation mechanism is unclear. This study systematically modulates κ of SrCo1-xFexOy (0 ≤ x ≤ 1, 2 ≤ y ≤ 3) solid solutions used as the active layers in solid-state electrochemical thermal transistors. When y = 3, the lattice κ of SrCo1-xFexOy is ∼2.8 W m-1 K-1 and insensitive to x. When x = 0 and y = 3, κ increases to ∼3.8 W m-1 K-1 due to the contribution of the electron κ. When y = 2, κ slightly depends on the ordered atomic arrangement. Materials that are high electrical conductors with highly ordered lattices when the transistor is on but are electrical insulators with disordered lattices when the transistor is off should be well-suited for the active layers of solid-state electrochemical thermal transistors.
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Affiliation(s)
- Zhiping Bian
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Qian Yang
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
- Institute of Quantum and Sustainable Technology, Jiangsu University, Zhenjiang 212013, China
| | - Mitsuki Yoshimura
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Hai Jun Cho
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Joonhyuk Lee
- Department of Physics, Pusan National University, Geumjeong-gu, Busan 46241, Korea
| | - Hyoungjeen Jeen
- Department of Physics, Pusan National University, Geumjeong-gu, Busan 46241, Korea
| | - Takashi Endo
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Yasutaka Matsuo
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
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