InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.

Collector Droplet Behavior during Formation of Nanowire Junctions

Formation of nanowire networks is an appealing strategy for demonstrating novel phenomena at the nanoscale, e.g., detection of Majorana Fermions, as well as an essential step in realizing complex nanowire-based architectures. However, a detailed description of mechanisms taking place during growth of such complex structures is lacking. Here, the experimental observations of gold-catalyzed germanium nanowire junction formation are explained utilizing phase field modeling corroborated with real-time in situ scanning electron microscopy. When the two nanowires collide head on during the growth, we observe two scenarios. (i) Two catalytic droplets merge into one, and the growth continues as a single nanowire. (ii) The droplets merge and subsequently split again, giving rise to the growth of two daughter nanowires. Both the experiments and modeling indicate the critical importance of the liquid-solid growth interface anisotropy and the growth kinetics in facilitating the structural transition during the nanowire merging process.

Next steps of quantum transport in Majorana nanowire devices

Majorana zero modes are localized quasiparticles that obey non-Abelian exchange statistics. Braiding Majorana zero modes forms the basis of topologically protected quantum operations which could, in principle, significantly reduce qubit decoherence and gate control errors at the device level. Therefore, searching for Majorana zero modes in various solid state systems is a major topic in condensed matter physics and quantum computer science. Since the first experimental signature observed in hybrid superconductor-semiconductor nanowire devices, this field has witnessed a dramatic expansion in material science, transport experiments and theory. While making the first topological qubit based on these Majorana nanowires is currently an ongoing effort, several related important transport experiments are still being pursued in the near term. These will not only serve as intermediate steps but also show Majorana physics in a more fundamental aspect. In this perspective, we summarize these key Majorana experiments and the potential challenges.

Recent advances in Sb-based III-V nanowires

Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.