Nanoscale Mapping of Molecular Vibrational Modes via Vibrational Noise Spectroscopy

Quantum Flicker Noise in Atomic and Molecular Junctions

We report on a quantum form of electronic flicker noise in nanoscale conductors that contains valuable information on quantum transport. This noise is experimentally identified in atomic and molecular junctions and theoretically analyzed by considering quantum interference due to fluctuating scatterers. Using conductance, shot-noise, and flicker-noise measurements, we show that the revealed quantum flicker noise uniquely depends on the distribution of transmission channels, a key characteristic of quantum conductors. This dependence opens the door for the application of flicker noise as a diagnostic probe for fundamental properties of quantum conductors and many-body quantum effects, a role that up to now has been performed by the experimentally less-accessible shot noise.

Molecular vibrational imaging at nanoscale

The demand to visualize the spatial distribution of chemical species based on vibrational spectra is rapidly increasing. Driven by such a need, various Raman and infrared spectro-microscopies with a nanometric spatial resolution have been developed over the last two decades. Despite rapid progress, a large gap still exists between the general needs and what these techniques can achieve. This Perspective highlights the key challenges and recent breakthroughs of the two vibrational nano-imaging techniques, scattering-type scanning near-field optical microscopy and tip-enhanced Raman scattering.

Dipolar Noise in Fluorinated Molecular Wires

We demonstrate a strategy to directly map and quantify the effects of dipole formation on electrical transports and noises in the self-assembled monolayers (SAMs) of molecular wires. In this method, the SAM patterns of fluorinated molecules with dipole moments were prepared on conducting substrates, and a conducting probe in contact-mode atomic force microscopy was utilized to map currents and noises through the probe on the molecular patterns. The maps were analyzed to extract the characteristic parameters of dipolar noises in SAMs, and the results were compared with those of hydrogenated molecular patterns without dipole moments. At rather low bias conditions, the fluorinated molecular junctions exhibited a tunneling conduction and a resistance value comparable to that of the hydrogenated molecules with a six-times-longer length, which was attributed to stronger dipoles formation in fluorinated molecules. Interestingly, conductance (G) in different regions of fluorinated molecular patterns exhibited a strong correlation with a noise power spectral density of S_I/I² like S_I/I² ∝ G^-2, which can be explained by enhanced barrier fluctuations produced by the dipoles of fluorinated molecules. Furthermore, we observed that the noise power spectral density of fluorinated molecules showed an anomalous frequency (f) dependence like S_I/I² ∝ 1/f^1.7, possibly due to the slowing down of the tunneling of carriers from increased barrier fluctuations. In rather high bias conditions, conductions in both hydrogenated and fluorinated molecules showed a transition from tunneling to thermionic charge transports. Our results provide important insights into the effects of dipoles on mesoscopic transport and resistance-fluctuation in molecules and could have a significant impact on the fundamental understanding and applications in this area.

Mapping reversible photoswitching of molecular resistance fluctuations during the conformational transformation of azobenzene-terminated molecular switches

We report a direct mapping and analysis of electrical noise in azobenzene-terminated molecular monolayers, revealing reversible photoswitching of the molecular resistance fluctuations in the layers. In this work, a conducting atomic force microscope combined with a homemade spectrum analyzer was used to image electrical current and noise at patterned self-assembled monolayers (SAMs) of azobenzene-terminated molecular wires on a gold substrate. We analyzed the current and noise imaging data to obtain maps of molecular resistances and amount of mean-square fluctuations in the resistances of the regions of trans-azobenzene and a cis/trans-azobenzene mixture. We revealed that the fluctuations in the molecular resistances in the SAMs were enhanced after the trans-to-cis isomerization, while the resistances were reduced. This result could be attributed to enhanced disorders in the molecular arrangements in the cis-SAMs. Furthermore, we observed that the changes in the resistance fluctuations were reversible with respect to repeated trans-to-cis and cis-to-trans isomerizations, indicating that the effects originated from reversible photoswitching of the molecular structures rather than irreversible damages of the molecules. These findings provide valuable insights into the electrical fluctuations in photoswitchable molecules, which could be utilized in further studies on molecular switches and molecular electronics in general.

Origin and mechanism analysis of asymmetric current fluctuations in single-molecule junctions

The measurements of molecular electronic devices usually suffer from serious noise. Although noise hampers the operation of electric circuits in most cases, current fluctuations in single-molecule junctions are essentially related to their intrinsic quantum effects in the process of electron transport. Noise analysis can reveal and understand these processes from the behavior of current fluctuations. Here, in this study we observe and analyze the faint asymmetric current distribution in single-molecule junctions, in which the asymmetric intensity is highly related to the applied biases. The exploration of high-order moments within bias and temperature dependent measurements, in combination with model Hamiltonian calculations, statistically prove that the asymmetric current distribution originates from the inelastic electron tunneling process. Such results demonstrate a potential noise analysis method based on the fine structures of the current distribution rather than the noise power, which has obvious advantages in the investigation of the inelastic electron tunneling process in single-molecule junctions.

The asymmetric current noise in a single-molecule device was observed, which is relevant to an inelastic electron transport process.