Gigahertz Single-Electron Pumping Mediated by Parasitic States

Picosecond coherent electron motion in a silicon single-electron source

An advanced understanding of ultrafast coherent electron dynamics is necessary for the application of submicrometre devices under a non-equilibrium drive to quantum technology, including on-demand single-electron sources¹, electron quantum optics^2-4, qubit control^5-7, quantum sensing^8,9 and quantum metrology¹⁰. Although electron dynamics along an extended channel has been studied extensively^2-4,11, it is hard to capture the electron motion inside submicrometre devices. The frequency of the internal, coherent dynamics is typically higher than 100 GHz, beyond the state-of-the-art experimental bandwidth of less than 10 GHz (refs. ^6,12,13). Although the dynamics can be detected by means of a surface-acoustic-wave quantum dot¹⁴, this method does not allow for a time-resolved detection. Here we theoretically and experimentally demonstrate how we can observe the internal dynamics in a silicon single-electron source that comprises a dynamic quantum dot in an effective time-resolved fashion with picosecond resolution using a resonant level as a detector. The experimental observations and the simulations with realistic parameters show that a non-adiabatically excited electron wave packet¹⁵ spatially oscillates quantum coherently at ~250 GHz inside the source at 4.2 K. The developed technique may, in future, enable the detection of fast dynamics in cavities, the control of non-adiabatic excitations¹⁵ or a single-electron source that emits engineered wave packets¹⁶. With such achievements, high-fidelity initialization of flying qubits⁵, high-resolution and high-speed electromagnetic-field sensing⁸ and high-accuracy current sources¹⁷ may become possible.

Unusual Quantum Transport Mechanisms in Silicon Nano-Devices

Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.