Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films

Tailoring the Lithium Concentration in Thin Lithium Ferrite Films Obtained by Dual Ion Beam Sputtering

Thin films of lithium spinel ferrite, LiFe5O8, have attracted much scientific attention because of their potential for efficient excitation, the manipulation and propagation of spin currents due to their insulating character, high-saturation magnetization, and Curie temperature, as well as their ultra-low damping value. In addition, LiFe5O8 is currently one of the most interesting materials in terms of developing spintronic devices based on the ionic control of magnetism, for which it is crucial to control the lithium's atomic content. In this work, we demonstrate that dual ion beam sputtering is a suitable technique to tailor the lithium content of thin films of lithium ferrite (LFO) by using the different energies of the assisting ion beam formed by Ar+ and O2+ ions during the growth process. Without assistance, a disordered rock-salt LFO phase (i.e., LiFeO2) can be identified as the principal phase. Under beam assistance, highly out-of-plane-oriented (111) thin LFO films have been obtained on (0001) Al2O3 substrates with a disordered spinel structure as the main phase and with lithium concentrations higher and lower than the stoichiometric spinel phase, i.e., LiFe5O8. After post-annealing of the films at 1025 K, a highly ordered ferromagnetic spinel LFO phase was found when the lithium concentration was higher than the stoichiometric value. With lower lithium contents, the antiferromagnetic hematite (α-Fe2O3) phase emerged and coexisted in films with the ferromagnetic LixFe6-xO8. These results open up the possibility of controlling the properties of thin lithium ferrite-based films to enable their use in advanced spintronic devices.

Emergent Magnonic Materials: Challenges and Opportunities

Advances in information technology are hindered by energy dissipation from Joule losses associated with charge transport. In contrast, the process of information based on spin waves propagation (magnons) in magnetic materials is dissipationless. Low damping of spin wave excitations is essential to control the propagation length of magnons. Ferrimagnetic Y3Fe5O12 garnets (YIG) exhibit the lowest magnetic damping constants. However, to attain the lowest damping constant, epitaxial growth of YIG on single crystal substrates of Gd3Ga5O12 at elevated temperatures is required, which hinders their CMOS integration in electronic devices. Furthermore, their low saturation magnetization and magnetocrystalline anisotropy are challenging for nanoscale device applications. In the search for alternative material systems, polycrystalline ferromagnetic Co25Fe75 alloy films and ferrimagnetic spinel ferrites, such as MgAl0.5Fe1.5O4 (MAFO), have emerged as potential candidates. Their damping constants are comparable, although they are at least one order of magnitude higher than YIG's. However, Co25Fe75 alloy thin film growth is CMOS compatible, and its magnon diffusion length is 20× longer than in MAFO. In addition, MAFO requires epitaxial growth on lattice-matched MgAl2O4 substrates. We discuss the material properties that control the Gilbert damping constant in CoxFe1-x alloys and MAFO and conclude that CoxFe1-x alloy thin films bring us closer to the realization of the exploitation of spin waves for magnonics.

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li0.5Al1.0Fe1.5O4 (LAFO) films on MgGa2O4 (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.

A puzzling insensitivity of magnon spin diffusion to the presence of 180-degree domain walls

We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl_0.5Fe_1.5O₄ (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion - nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall.

Interfaceless Exchange Bias in CoFe2O4 Nanocrystals

Oxidized cobalt ferrite nanocrystals with a modified distribution of the magnetic cations in their spinel structure give place to an unusual exchange-coupled system with a double reversal of the magnetization, exchange bias, and increased coercivity, but without the presence of a clear physical interface that delimits two well-differentiated magnetic phases. More specifically, the partial oxidation of cobalt cations and the formation of Fe vacancies at the surface region entail the formation of a cobalt-rich mixed ferrite spinel, which is strongly pinned by the ferrimagnetic background from the cobalt ferrite lattice. This particular configuration of exchange-biased magnetic behavior, involving two different magnetic phases but without the occurrence of a crystallographically coherent interface, revolutionizes the established concept of exchange bias phenomenology.

Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers

Magnetic insulator-topological insulator heterostructures have been studied in search of chiral edge states via proximity induced magnetism in the topological insulator, but these states have been elusive. We identified MgAl_{0.5}Fe_{1.5}O_{4}/Bi_{2}Se_{3} bilayers for a possible magnetic proximity effect. Electrical transport and polarized neutron reflectometry suggest a proximity effect, but structural data indicate a disordered interface as the origin of the magnetic response. Our results provide a strategy via correlation of microstructure with magnetic data to confirm a magnetic proximity effect.

Anisotropic Magnon Spin Transport in Ultrathin Spinel Ferrite Thin Films─Evidence for Anisotropy in Exchange Stiffness

Magnon-mediated spin flow in magnetically ordered insulators enables long-distance spin-based information transport with low dissipation. In the materials studied to date, no anisotropy has been observed in the magnon propagation length as a function of propagation direction. Here, we report measurements of magnon spin transport in a spinel ferrite, magnesium aluminum ferrite MgAl_0.5Fe_1.5O₄ (MAFO), which has a substantial in-plane 4-fold magnetic anisotropy. We observe spin diffusion lengths > 0.8 μm at room temperature in 6 nm films, with spin diffusion lengths 30% longer along the easy axes compared to the hard axes. The sign of this difference is opposite to the effects just of anisotropy in the magnetic energy for a uniform magnetic state. We suggest instead that accounting for anisotropy in exchange stiffness is necessary to explain these results. These findings provide an approach for controlling magnon transport via strain, which opens new opportunities for designing magnonic devices.

Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films

Magnetic insulators are important materials for a range of next-generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators that can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling, which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single-crystal (Mg_0.2Ni_0.2Fe_0.2Co_0.2Cu_0.2)Fe₂O₄ films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Local and global magnetic measurements further demonstrate how strain can be used to manipulate the magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next-generation magnetic devices.

Conductivitylike Gilbert Damping due to Intraband Scattering in Epitaxial Iron

Confirming the origin of Gilbert damping by experiment has remained a challenge for many decades, even for simple ferromagnetic metals. Here, we experimentally identify Gilbert damping that increases with decreasing electronic scattering in epitaxial thin films of pure Fe. This observation of conductivitylike damping, which cannot be accounted for by classical eddy-current loss, is in excellent quantitative agreement with theoretical predictions of Gilbert damping due to intraband scattering. Our results resolve the long-standing question about a fundamental damping mechanism and offer hints for engineering low-loss magnetic metals for cryogenic spintronics and quantum devices.