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Zuo Z, Ma Z, Chen T, Zhang W, Li W, Xu J, Xu L, Chen K. Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiN x:O Light-Emitting Diode. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1306. [PMID: 39120411 PMCID: PMC11313910 DOI: 10.3390/nano14151306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 07/28/2024] [Accepted: 08/01/2024] [Indexed: 08/10/2024]
Abstract
As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiNx:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNxO device, the green electroluminescence (EL) from the SiNx:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiNx:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiNx:O films play a key role in the strong green EL. Our discovery demonstrates that SiNx:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.
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Affiliation(s)
- Zongyan Zuo
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Zhongyuan Ma
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Tong Chen
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Wenping Zhang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Wei Li
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Jun Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Ling Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
| | - Kunji Chen
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China
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Murphey CGE, Park JS, Kim S, Cahoon JF. Epitaxially Grown Silicon Nanowires with a Gold Molecular Adhesion Layer for Core/Shell Structures with Compact Mie and Plasmon Resonances. ACS NANO 2023; 17:21739-21748. [PMID: 37890020 DOI: 10.1021/acsnano.3c07157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2023]
Abstract
Noble-metal plasmonic nanostructures have attracted much attention because they can support deep-subwavelength optical resonances, yet their performance tends to be limited by high Ohmic absorption losses. In comparison, high-index dielectric materials can support low-loss optical resonances but do not tend to yield the same subwavelength optical confinement. Here, we combine these two approaches and examine the dielectric-plasmonic resonances in dielectric/metal core/shell nanowires. Si nanowires were grown epitaxially from (111) substrates, and direct deposition of Au on these structures by physical vapor deposition yielded nonconformal Au islands. However, by introduction of a molecular adhesion layer prior to deposition, cylindrical Si/Au core/shell nanostructures with conformal metal shells were successfully fabricated. Examining these structures as optical cavities using both optical simulations and experimental extinction measurements, we found that the structures support Mie resonances with quality factors enhanced up to ∼30 times compared with pure dielectric structures and plasmon resonances with optical confinement enhanced up to ∼5 times compared with pure metallic structures. Interestingly, extinction spectra of both Mie and plasmon resonances yield Fano line shapes, whose manifestation can be attributed to the combination of high quality factor resonances, Mie-plasmon coupling, and phase delay of the background optical field. This work demonstrates a bottom-up synthetic method for the production of freestanding, cylindrically symmetric semiconductor/metal core/shell nanowires that enables the efficient trapping of light on deep-subwavelength length scales for varied applications in photonics and optoelectronics.
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Affiliation(s)
- Corban G E Murphey
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - Jin-Sung Park
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - Seokhyoung Kim
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
| | - James F Cahoon
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
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3
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Guo H, Hu Q, Zhang C, Liu H, Wu R, Pan S. Strong Plasmon-Mie Resonance in Si@Pd Core-Ω Shell Nanocavity. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1453. [PMID: 36837084 PMCID: PMC9961871 DOI: 10.3390/ma16041453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 02/06/2023] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
The surface plasmon resonance (SPR) and localized surface plasmon resonance (LSPR) can be used to enhance the generation of the hot electrons in plasmon metal nanocavity. In this paper, Pd nanomembrane (NMB) is sputtered on the surface of Si nanosphere (NS) on glass substrate to form the Si@Pd core-Ω shell nanocavity. A plasmon-Mie resonance is induced in the nanocavity by coupling the plasmon resonance with the Mie resonance to control the optical property of Si NS. When this nanocavity is excited by near-infrared-1 (NIR-1, 650 nm-900 nm) femtosecond (fs) laser, the luminescence intensity of Si NS is dramatically enhanced due to the synergistic interaction of plasmon and Mie resonance. The generation of resonance coupling regulates resonant mode of the nanocavity to realize multi-dimensional nonlinear optical response, which can be utilized in the fields of biological imaging and nanoscale light source.
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Affiliation(s)
- Haomin Guo
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Qi Hu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
| | - Chengyun Zhang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
- Key Lab of Si-Based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Haiwen Liu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Runmin Wu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Shusheng Pan
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510555, China
- Key Lab of Si-Based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
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Electrochemical Synthesis of Plasmonic Nanostructures. Molecules 2022; 27:molecules27082485. [PMID: 35458688 PMCID: PMC9027786 DOI: 10.3390/molecules27082485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Revised: 04/01/2022] [Accepted: 04/08/2022] [Indexed: 11/23/2022] Open
Abstract
Thanks to their tunable and strong interaction with light, plasmonic nanostructures have been investigated for a wide range of applications. In most cases, controlling the electric field enhancement at the metal surface is crucial. This can be achieved by controlling the metal nanostructure size, shape, and location in three dimensions, which is synthetically challenging. Electrochemical methods can provide a reliable, simple, and cost-effective approach to nanostructure metals with a high degree of geometrical freedom. Herein, we review the use of electrochemistry to synthesize metal nanostructures in the context of plasmonics. Both template-free and templated electrochemical syntheses are presented, along with their strengths and limitations. While template-free techniques can be used for the mass production of low-cost but efficient plasmonic substrates, templated approaches offer an unprecedented synthetic control. Thus, a special emphasis is given to templated electrochemical lithographies, which can be used to synthesize complex metal architectures with defined dimensions and compositions in one, two and three dimensions. These techniques provide a spatial resolution down to the sub-10 nanometer range and are particularly successful at synthesizing well-defined metal nanoscale gaps that provide very large electric field enhancements, which are relevant for both fundamental and applied research in plasmonics.
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Tang K, Jiang M, Wan P, Kan C. Continuous-wave operation of an electrically pumped single microribbon based Fabry-Perot microlaser. OPTICS EXPRESS 2021; 29:983-995. [PMID: 33726323 DOI: 10.1364/oe.412475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Accepted: 12/12/2020] [Indexed: 06/12/2023]
Abstract
Fabry-Perot (FP) mode microlasers have been popularized and applied widely in on-chip coherent light sources because of the unique advantages of directional output emission. In this work, a heterojunction light-emitting diode (LED) made of a Ga-doped ZnO (ZnO:Ga) microribbon and p-GaAs template is fabricated. And its electroluminescence characteristics of strong coupling of exciton-photon and polariton lasing, in the blue-violet spectrum, were demonstrated under continuous-wave operation of an electrical injection. In the device structure, a single microribbon with a rectangular-shaped cross section can achieve the FP-mode lasing action by the optical oscillation between the two lateral sides of the microcrystals in the ultraviolet spectrum. As the reverse-current is below the threshold value, the device can have radiative polaritonic lighting directly from bilateral sides of the microribbon, yielding strong coupling between excitons and FP-mode microresonator. And the exciton-polariton coupling strengths characterized by a Rabi splitting energy were extracted to be 500 meV. Further, when the input current increased more than a certain value, strong laser illuminating developed as two sharp peaks at the lower energy shoulder of the spontaneous emission peak, and these oscillating modes can dominate the waveguide EL spectra. The experimental results can provide us with further unambiguous evidence that the lasing is originated from the polariton resonances for the microribbon with strong exciton-polariton coupling. Since single microribbon based optical FP-mode microresonators do not require additional feedback mirrors, their compact size and resulting low thresholds make them a powerful candidate to construct on-chip coherent light sources for future integrated nanophotonic and optoelectronic circuitry.
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Wendisch F, Abazari M, Werner V, Barb H, Rey M, Goerlitzer ESA, Vogel N, Mahdavi H, Bourret GR. Spatioselective Deposition of Passivating and Electrocatalytic Layers on Silicon Nanowire Arrays. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52581-52587. [PMID: 33169967 PMCID: PMC7705884 DOI: 10.1021/acsami.0c14013] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Accepted: 10/26/2020] [Indexed: 05/21/2023]
Abstract
Metal-silicon nanowire array photoelectrodes provide a promising architecture for water-splitting because they can afford high catalyst loading and decouple charge separation from the light absorption process. To further improve and understand these hybrid nanowire photoelectrodes, control of the catalyst amount and location within the wire array is required. Such a level of control is currently synthetically challenging to achieve. Here, we report the synthesis of cm2-sized hybrid silicon nanowire arrays with electrocatalytically active Ni-Mo and Pt patches placed at defined vertical locations within the individual nanowires. Our method is based on a modified three-dimensional electrochemical axial lithography (3DEAL), which combines metal-assisted chemical etching (MACE) to produce Si nanowires with spatially defined SiO2 protection layers to selectively cover and uncover specific areas within the nanowire arrays. This spatioselective SiO2 passivation yields nanowire arrays with well-defined exposed Si surfaces, with feature sizes down to 100 nm in the axial direction. Subsequent electrodeposition directs the growth of the metal catalysts at the exposed silicon surfaces. As a proof of concept, we report photoelectrocatalytic activity of the deposited catalysts for the hydrogen evolution reaction on p-type Si nanowire photocathodes. This demonstrates the functionality of these hybrid metal/Si nanowire arrays patterned via 3DEAL, which paves the way for investigations of the influence of three-dimensional geometrical parameters on the conversion efficiency of nanostructured photoelectrodes interfaced with metal catalysts.
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Affiliation(s)
- Fedja
J. Wendisch
- Department
of Chemistry and Physics of Materials, University
of Salzburg, Jakob-Haringer Strasse 2A, Salzburg A-5020, Austria
| | - Mehri Abazari
- Department
of Chemistry and Physics of Materials, University
of Salzburg, Jakob-Haringer Strasse 2A, Salzburg A-5020, Austria
- School
of Chemistry, College of Science, University
of Tehran, P.O. Box 14155-6455, Tehran, Iran
| | - Valerie Werner
- Department
of Chemistry and Physics of Materials, University
of Salzburg, Jakob-Haringer Strasse 2A, Salzburg A-5020, Austria
| | - Horia Barb
- Department
of Chemistry and Physics of Materials, University
of Salzburg, Jakob-Haringer Strasse 2A, Salzburg A-5020, Austria
| | - Marcel Rey
- Institute
of Particle Technology, Friedrich-Alexander-University
Erlangen-Nürnberg, Cauerstrasse 4, 91058 Erlangen, Germany
| | - Eric S. A. Goerlitzer
- Institute
of Particle Technology, Friedrich-Alexander-University
Erlangen-Nürnberg, Cauerstrasse 4, 91058 Erlangen, Germany
| | - Nicolas Vogel
- Institute
of Particle Technology, Friedrich-Alexander-University
Erlangen-Nürnberg, Cauerstrasse 4, 91058 Erlangen, Germany
| | - Hossein Mahdavi
- School
of Chemistry, College of Science, University
of Tehran, P.O. Box 14155-6455, Tehran, Iran
| | - Gilles R. Bourret
- Department
of Chemistry and Physics of Materials, University
of Salzburg, Jakob-Haringer Strasse 2A, Salzburg A-5020, Austria
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Jiang M, Mao W, Zhou X, Kan C, Shi D. Wavelength-Tunable Waveguide Emissions from Electrically Driven Single ZnO/ZnO:Ga Superlattice Microwires. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11800-11811. [PMID: 30840431 DOI: 10.1021/acsami.9b00851] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Because of the superlattice structures comprising periodic and alternating crystalline layers, one-dimensional photon crystals can be employed to expand immense versatility and practicality of modulating the electronic and photonic propagation behaviors, as well as optical properties. In this work, individual superlattice microwires (MWs) comprising ZnO and Ga-doped ZnO (ZnO/ZnO:Ga) layers were successfully synthesized. Wavelength-tunable multipeak emissions can be realized from electrically driven single superlattice MW-based emission devices, with the dominant wavelengths tuned from ultraviolet to visible spectral regions. To illustrate the multipeak character, single superlattice MWs were selected to construct fluorescent emitters, and the emission wavelength could be tuned from 518 to 562 nm, which is dominated by Ga incorporation. Especially, by introducing Au quasiparticle film decoration, emission characteristics can further be modulated, such as the red shift of the emission wavelengths, and the multipeaks were strongly modified and split into more and narrower subbands. In particular, electrically pumped exciton-polariton emission was realized from heterojunction diodes composed of single ZnO/ZnO:Ga superlattice MWs and p-GaN layers in the blue-ultraviolet spectral regions. With the aid of localized surface plasmons from Au nanoparticles, which deposited on the superlattice MW, significant improvement of emission characteristics, such as enhancement of output efficiencies, blue shift of the dominant emission wavelengths, and narrowing of the spectral linewidth, can be achieved. The multipeak emission characteristics would be originated from the typical optical cavity modes, but not the Fabry-Perot mode optical cavity formed by the bilateral sides of the wire. The resonant modes are likely attributed to the coupled optical microcavities, which formed along the axial direction of the wire; thus, the emitted photons can be propagated and selected longitudinally. Therefore, the novel ZnO/ZnO:Ga superlattice MWs with a quadrilateral cross section can provide a potential platform to construct multicolor emitters and low-threshold exciton-polariton diodes and lasers.
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