Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires

Optical Absorption in Hexagonal-Diamond Si and Ge Nanowires: Insights from STEM-EELS Experiments and Ab Initio Theory

Hexagonal-diamond (2H) group IV nanowires are key for advancing group IV-based lasers, quantum electronics, and photonics. Understanding their dielectric response is crucial for performance optimization, but their optical absorption properties remain unexplored. We present the first comprehensive study of optical absorption in 2H-Si and 2H-Ge nanowires combining high-resolution STEM, monochromated EELS, and ab initio simulations. The nanowires, grown in situ in a TEM as nanobranches on GaAs stems, show excellent structural quality: single crystalline, strain-free, minimal defects, and no substrate contamination, enabling access to intrinsic dielectric response. 2H-Si exhibits enhanced absorption in the visible range compared to cubic Si, with a marked onset above 2.5 eV. 2H-Ge shows absorption near 1 eV but no clear features at the direct bandgap, as predicted by ab initio simulations. A peak at around 2 eV in aloof-beam spectra is attributed to a thin 3C-Ge shell. These findings clarify the structure-optical response relationships in 2H materials.

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

Direct evidence of 2H hexagonal Si in Si nanowires

Hexagonal Si (2H polytype) has attracted great interest because of its unique physical properties and wide range of potential applications. For example, it might be used in heterojunctions based on hexagonal and cubic Si. Although hexagonal Si has been reported in Si nanowires, its existence is doubted because structural defects of diamond cubic Si can produce structural signals similar to those attributed to hexagonal Si. Here, through the use of atomic resolution high-angle annular dark-field scanning transmission electron microscopy imaging, we unambiguously report the coherent intergrowth of diamond cubic (3C polytype) and 2H hexagonal Si in Si nanowires grown by chemical vapor deposition. A model describing the intergrowth of 3C and 2H Si is proposed and the reasons for the generation of 2H Si are discussed in detail.