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Wang Y, Chen L, Pan Y, Zhang D, Yu S, Wu G, Liu X, Wu L, Shi W, Zhang G, Zhang L, Peng W, Ren J, Wang Z. Geometric Scaling of the Current-Phase Relation of Niobium Nanobridge Junctions. ACS NANO 2023; 17:15466-15473. [PMID: 37573571 DOI: 10.1021/acsnano.3c01301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
The nanobridge junction (NBJ) is a type of Josephson junction that is advantageous for the miniaturization of superconducting circuits. However, the current-phase relation (CPR) of the NBJ usually deviates from a sinusoidal function, which has been explained by a simplified model with correlation only to its effective length. Here, we investigated both measured and calculated CPRs of niobium NBJs of a cuboidal shape with a three-dimensional bank structure. From a sine-wave to a sawtooth-like form, we showed that deviated CPRs of NBJs can be described quantitatively by its skewness Δθ. Furthermore, the measured dependence of Δθ on the critical current I0 from 108 NBJs turned out to be consistent with the calculated dependence derived from the change in geometric dimensions. This suggested that the CPRs of NBJs can be tuned by their geometric dimensions. In addition, the calculated scaling behavior of Δθ versus I0 in 3D space was provided for the future design of superconducting circuits of a high integration level by using niobium NBJs.
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Affiliation(s)
- Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Weifeng Shi
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Guofeng Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, People's Republic of China
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2
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Toda Y, Tsuchiya S, Yamane K, Morita R, Oda M, Kurosawa T, Mertelj T, Mihailovic D. Optical vortex induced spatio-temporally modulated superconductivity in a high-T c cuprate. OPTICS EXPRESS 2023; 31:17537-17546. [PMID: 37381484 DOI: 10.1364/oe.487041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Accepted: 04/25/2023] [Indexed: 06/30/2023]
Abstract
We report an experimental approach to produce spatially localized photoinduced superconducting state in a cuprate superconductor using optical vortices with ultrafast pulses. The measurements were carried out using coaxially aligned three-pulse time-resolved spectroscopy, in which an intense vortex pulse was used for coherent quenching of superconductivity and the resulting spatially modulated metastable states were analyzed by the pump-probe spectroscopy. The transient response after quenching shows a spatially localized superconducting state that remains unquenched at the dark core of the vortex beam for a few picoseconds. Because the quenching is instantaneously driven by photoexcited quasiparticles, the vortex beam profile can be transferred directly to the electron system. By using the optical vortex-induced superconductor, we demonstrate spatially resolved imaging of the superconducting response and show that the spatial resolution can be improved using the same principle as that of super-resolution microscopy for fluorescent molecules. The demonstration of spatially controlled photoinduced superconductivity is significant for establishing a new method for exploring novel photoinduced phenomena and applications in ultrafast optical devices.
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Crété D, Kermorvant J, Lemaître Y, Marcilhac B, Mesoraca S, Trastoy J, Ulysse C. Evaluation of Self-Field Effects in Magnetometers Based on Meander-Shaped Arrays of Josephson Junctions or SQUIDs Connected in Series. MICROMACHINES 2021; 12:mi12121588. [PMID: 34945440 PMCID: PMC8705823 DOI: 10.3390/mi12121588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Revised: 12/14/2021] [Accepted: 12/14/2021] [Indexed: 11/16/2022]
Abstract
Arrays of superconducting quantum interference devices (SQUIDs) are highly sensitive magnetometers that can operate without a flux-locked loop, as opposed to single SQUID magnetometers. They have no source of ambiguity and benefit from a larger bandwidth. They can be used to measure absolute magnetic fields with a dynamic range scaling as the number of SQUIDs they contain. A very common arrangement for a series array of SQUIDs is with meanders as it uses the substrate area efficiently. As for most layouts with long arrays, this layout breaks the symmetry required for the elimination of adverse self-field effects. We investigate the scaling behavior of series arrays of SQUIDs, taking into account the self-field generated by the bias current flowing along the meander. We propose a design for the partial compensation of this self-field. In addition, we provide a comparison with the case of series arrays of long Josephson junctions, using the Fraunhofer pattern for applications in magnetometry. We find that compensation is required for arrays of the larger size and that, depending on the technology, arrays of long Josephson junctions may have better performance than arrays of SQUIDs.
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Affiliation(s)
- Denis Crété
- Unité Mixte de Physique CNRS/THALES, Université de Paris-Saclay, CEDEX, 91720 Palaiseau, France; (Y.L.); (B.M.); (S.M.); (J.T.)
- Correspondence: (D.C.); (C.U.); Tel.: +33-1-69-41-58-52 (D.C.)
| | | | - Yves Lemaître
- Unité Mixte de Physique CNRS/THALES, Université de Paris-Saclay, CEDEX, 91720 Palaiseau, France; (Y.L.); (B.M.); (S.M.); (J.T.)
| | - Bruno Marcilhac
- Unité Mixte de Physique CNRS/THALES, Université de Paris-Saclay, CEDEX, 91720 Palaiseau, France; (Y.L.); (B.M.); (S.M.); (J.T.)
| | - Salvatore Mesoraca
- Unité Mixte de Physique CNRS/THALES, Université de Paris-Saclay, CEDEX, 91720 Palaiseau, France; (Y.L.); (B.M.); (S.M.); (J.T.)
| | - Juan Trastoy
- Unité Mixte de Physique CNRS/THALES, Université de Paris-Saclay, CEDEX, 91720 Palaiseau, France; (Y.L.); (B.M.); (S.M.); (J.T.)
| | - Christian Ulysse
- Centre de Nanosciences et de Nanotechnologie, CNRS, 91120 Orsay, France
- Correspondence: (D.C.); (C.U.); Tel.: +33-1-69-41-58-52 (D.C.)
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Farrar LS, Nevill A, Lim ZJ, Balakrishnan G, Dale S, Bending SJ. Superconducting Quantum Interference in Twisted van der Waals Heterostructures. NANO LETTERS 2021; 21:6725-6731. [PMID: 34428907 PMCID: PMC8397396 DOI: 10.1021/acs.nanolett.1c00152] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2021] [Revised: 07/21/2021] [Indexed: 06/13/2023]
Abstract
We demonstrate the formation of both Josephson junctions and superconducting quantum interference devices (SQUIDs) using a dry transfer technique to stack and deterministically misalign mechanically exfoliated flakes of NbSe2. The current-voltage characteristics of the resulting twisted NbSe2-NbSe2 junctions are found to be sensitive to the misalignment angle of the crystallographic axes, opening up a new control parameter for optimization of the device performance, which is not available in thin-film-deposited junctions. A single lithographic process has then been implemented to shape Josephson junctions into SQUID geometries with typical loop areas of ∼25 μm2 and weak links ∼600 nm wide. At T = 3.75 K in an applied magnetic field, these devices display large stable current and voltage modulation depths of up to ΔIc ∼ 75% and ΔV ∼ 1.4 mV, respectively.
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Affiliation(s)
- Liam S. Farrar
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Aimee Nevill
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Zhen Jieh Lim
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Geetha Balakrishnan
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Sara Dale
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Simon J. Bending
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
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Chen L, Wu L, Wang Y, Pan Y, Zhang D, Zeng J, Liu X, Ma L, Peng W, Wang Y, Ren J, Wang Z. Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device. ACS NANO 2020; 14:11002-11008. [PMID: 32697567 DOI: 10.1021/acsnano.0c04405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 × 9 μm2 rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (∼66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of π/4-3π/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.
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Affiliation(s)
- Lei Chen
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Lili Wu
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yue Wang
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yinping Pan
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200438 China
| | - Denghui Zhang
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Junwen Zeng
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
| | - Xiaoyu Liu
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
| | - Linxian Ma
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
| | - Wei Peng
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yihua Wang
- Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200438 China
| | - Jie Ren
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
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6
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Lin J, Müller B, Linek J, Karrer M, Wenzel M, Martínez-Pérez MJ, Kleiner R, Koelle D. YBa 2Cu 3O 7 nano superconducting quantum interference devices on MgO bicrystal substrates. NANOSCALE 2020; 12:5658-5668. [PMID: 32101218 DOI: 10.1039/c9nr10506a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on nanopatterned YBa2Cu3O7-δ (YBCO) direct current superconducting quantum interference devices (SQUIDs) based on grain boundary Josephson junctions. The nanoSQUIDs are fabricated by epitaxial growth of 120 nm-thick films of the high-transition temperature cuprate superconductor YBCO via pulsed laser deposition on MgO bicrystal substrates with 24° misorientation angle, followed by sputtering of dAu = 65 nm thick Au. Nanopatterning is performed by Ga focused ion beam (FIB) milling. The SQUID performance is comparable to devices on SrTiO3 (STO), as demonstrated by electric transport and noise measurements at 4.2 K. MgO has orders of magnitude smaller dielectric permittivity than STO; i.e., one may avoid Au as a resistively shunting layer to reduce the intrinsic thermal flux noise of the nanoSQUIDs. However, we find that the Au layer is important for avoiding degradation during FIB milling. Hence, we compare devices with different dAu produced by thinning the Au layer via Ar ion milling after FIB patterning. We find that the reduction of dAu yields an increase in junction resistance, however at the expense of a reduction of the critical current and increase in SQUID inductance. This results in an estimated thermal flux noise that is almost independent of dAu. However, for two devices on MgO with 65 nm-thick Au, we find an order of magnitude lower low-frequency excess noise as compared to nanoSQUIDs on STO or those on MgO with reduced dAu. For one of those devices we obtain with bias-reversal readout ultra-low flux noise of ∼175 nΦ0 Hz-1/2 down to ∼10 Hz.
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Affiliation(s)
- Jianxin Lin
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Benedikt Müller
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Julian Linek
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Max Karrer
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Malte Wenzel
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Maria José Martínez-Pérez
- Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain and Fundacíon ARAID, Avda. de Ranillas, 50018 Zaragoza, Spain
| | - Reinhold Kleiner
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
| | - Dieter Koelle
- Physikalisches Institut - Experimentalphysik II and Center for Quantum Science (CQ) in LISA+, University of Tübingen, Auf der Morgenstelle 14, 72076 Tübingen, Germany.
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