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Kraft FA, Baur H, Bommer M, Latz A, Fitschen-Oestern S, Fuchs S, Gerken M. Label-free multiplex sensing from buffer and immunoglobulin G sensing from whole blood with photonic crystal slabs using angle-tuning of an optical interference filter. BIOMEDICAL OPTICS EXPRESS 2023; 14:2293-2310. [PMID: 37206136 PMCID: PMC10191658 DOI: 10.1364/boe.489138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Revised: 03/31/2023] [Accepted: 04/16/2023] [Indexed: 05/21/2023]
Abstract
Direct detection of biomarkers from unpurified whole blood has been a challenge for label-free detection platforms, such as photonic crystal slabs (PCS). A wide range of measurement concepts for PCS exist, but exhibit technical limitations, which render them unsuitable for label-free biosensing with unfiltered whole blood. In this work, we single out the requirements for a label-free point-of-care setup based on PCS and present a wavelength selecting concept by angle tuning of an optical interference filter, which fulfills these requirements. We investigate the limit of detection (LOD) for bulk refractive index changes and obtain a value of 3.4 E-4 refractive index units (RIU). We demonstrate label-free multiplex detection for different types of immobilization entities, including aptamers, antigens, and simple proteins. For this multiplex setup we detect thrombin at a concentration of 6.3 µg/ml, antibodies of glutathione S-transferase (GST) diluted by a factor of 250, and streptavidin at a concentration of 33 µg/ml. In a first proof of principle experiment, we demonstrate the ability to detect immunoglobulins G (IgG) from unfiltered whole blood. These experiments are conducted directly in the hospital without temperature control of the photonic crystal transducer surface or the blood sample. We set the detected concentration levels into a medical frame of reference and point out possible applications.
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Affiliation(s)
- Fabio A. Kraft
- Integrated Systems and Photonics, Faculty of Engineering,
Kiel University, Germany
- Kiel Nano, Surface and Interface Science KiNSIS,
Kiel University, Germany
| | | | | | - Andreas Latz
- Integrated Systems and Photonics, Faculty of Engineering,
Kiel University, Germany
- Novatec Immundiagnostica GmbH, Dietzenbach, Germany
| | | | - Sabine Fuchs
- Kiel Nano, Surface and Interface Science KiNSIS,
Kiel University, Germany
- University Hospital Schleswig-Holstein, Kiel University, Germany
| | - Martina Gerken
- Integrated Systems and Photonics, Faculty of Engineering,
Kiel University, Germany
- Kiel Nano, Surface and Interface Science KiNSIS,
Kiel University, Germany
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Kraft FA, Harwardt K, Schardt J, Nowotka D, Gerken M. Suppressing the mechanochromism of flexible photonic crystals. OPTICS EXPRESS 2023; 31:6281-6295. [PMID: 36823888 DOI: 10.1364/oe.477189] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 01/19/2023] [Indexed: 06/18/2023]
Abstract
Photonic crystal slabs (PCS) are a promising platform for optical biosensing. Yet, flexible applications based on PCS for biosensing have been limited, as the mechanical properties influence the optical ones. Here, we show the suppression of the mechanochromism effect for flexible PCS. We obtained flexible photonic crystal slabs by sputtering of a dielectric 100 nm Nb2O5 high refractive index layer onto a flexible nanostructured polydimethylsiloxane (PDMS) substrate with 370 nm grating period. The PCS exhibit a guided mode resonance at around 650 nm. We demonstrate that these flexible photonic crystal slabs show less than 0.5 nm resonance shift for 4% strain and call them stabilized PCS (sPCS). We compare this to a resonance shift of ∼21 nm for ∼4% strain of a flexible photonic crystal with a flexible nanoparticle high index layer (mechanochromatic PCS, mPCS). This high resonance shift is expected from the Bragg equations, where 4% grating period change correspond to approximately 4% change of the resonance wavelength (i.e., ∼26 nm at a resonance wavelength of 650 nm), if changes in the mode effective refractive index are neglected. In a stretch series we obtain color-to-strain dependencies of 4.79 nm/% strain for mPCS and 0.11 nm/% strain for our stabilized sPCS. We analyze the suppression of the mechanochromism with detailed microscopy results. We observe that fissures and fractures form in the rigid waveguiding layer of the sPCS upon mechanical stress. An algorithm based on Holistically-Nested Edge Detection (HED) is used for automated counting of cracks. Rigid photonic crystal cells with sizes on the order of 10 µm to 100 µm are formed that explain the stable optical properties. Even more stable optical properties with less than 0.03 nm wavelength shift per 1% strain are demonstrated for sPCS with an additional dielectric 100 nm SiO2 low index layer beneath the Nb2O5 waveguide layer decoupling the waveguide further from the flexible PDMS substrate.
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Sun Y, Shi Y, Liu X, Song J, Li M, Wang X, Yang F. A wide-angle and TE/TM polarization-insensitive terahertz metamaterial near-perfect absorber based on a multi-layer plasmonic structure. NANOSCALE ADVANCES 2021; 3:4072-4078. [PMID: 36132834 PMCID: PMC9419552 DOI: 10.1039/d1na00246e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/01/2021] [Indexed: 06/16/2023]
Abstract
A kind of near-perfect metamaterial absorber, made of only Au and Si, has been presented in the terahertz band with extremely high absorptance. A flexible design method is proposed, which could create absorbers with four independent functions as follows. First, selective perfect absorption is achieved at a single frequency, which means the absorptance is more than 99.9% at the required frequency and almost 0% at adjacent frequencies. Second, nearly 100% perfect absorption is realized at more frequencies, which can be changed by simply adjusting the geometric parameters. Third, broadband absorption with a controllable band is gained, and the average absorptance exceeds 99% from 1.2 to 2 THz. Finally, the combination of single-frequency absorption and broadband absorption is accomplished, which greatly expands the application prospects of the proposed absorber. Besides, the absorber exhibits high performance over a wide range of incident angles from 0° to 60°. Meanwhile, it is insensitive to both TE and TM waves. The aforementioned design idea can be extended to other bands.
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Affiliation(s)
- Yuanbo Sun
- School of Microelectronics, Shandong University Jinan 250100 China
| | - Yanpeng Shi
- School of Microelectronics, Shandong University Jinan 250100 China
| | - Xiaoyu Liu
- School of Microelectronics, Shandong University Jinan 250100 China
| | - Jinmei Song
- School of Microelectronics, Shandong University Jinan 250100 China
| | - Meiping Li
- School of Microelectronics, Shandong University Jinan 250100 China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China
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Fan Z, Deng Q, Ma X, Zhou S. Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration. MATERIALS (BASEL, SWITZERLAND) 2021; 14:1272. [PMID: 33800108 PMCID: PMC7962191 DOI: 10.3390/ma14051272] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2021] [Revised: 02/25/2021] [Accepted: 03/03/2021] [Indexed: 11/16/2022]
Abstract
In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave-matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.
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Affiliation(s)
- Zhihua Fan
- Chengdu Research Institute, Sichuan University of Arts and Science, No. 519 Tashi Road, Dazhou 635000, China; (Z.F.); (X.M.)
| | - Qinling Deng
- School of Microelectronics, South China University of Technology, No. 381 Wushan Road, Guangzhou 510640, China;
| | - Xiaoyu Ma
- Chengdu Research Institute, Sichuan University of Arts and Science, No. 519 Tashi Road, Dazhou 635000, China; (Z.F.); (X.M.)
- Chongqing Co-Core Optics & Electronics Technology Institute Co., Ltd., Panxi Road, Chongqing 400021, China
| | - Shaolin Zhou
- School of Microelectronics, South China University of Technology, No. 381 Wushan Road, Guangzhou 510640, China;
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Cheng X, Huang R, Xu J, Xu X. Broadband Terahertz Near-Perfect Absorbers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33352-33360. [PMID: 32526137 DOI: 10.1021/acsami.0c06162] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Broadband terahertz (THz) absorbers are highly desired in detection, modulation, receiving, and imaging devices. We report the design and successful implementation of a novel broadband THz metasurface with a near-perfect absorption. Different from the traditional metal/dielectric/metal three-layer structures, the as-designed THz absorber has one more metal layer and a dielectric spacer on top, both of which are 200 nm thick. Although the total thickness increased by ∼7%, the near-perfect THz absorption band significantly broadened by 4×, achieving a broadband absorption of 270 GHz. Broadband, polarization-insensitive, and near-perfect THz absorptions were also observed over wide incident angles in these meta-absorbers, where the electric field and power loss were mainly concentrated in the additional thin dielectric layer. Such a broadband THz absorption was achieved through electromagnetic coupling between the top and middle metal layers and the resultant overlapping of the resonance frequencies. This strategy can be adapted to other spectrum-shaping devices.
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Affiliation(s)
- Xiaomeng Cheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Rui Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Jimmy Xu
- School of Engineering, Brown University, Providence, Rhode Island 02912, United States
| | - Xiangdong Xu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
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Hwang JG, Schiwietz G, Abo-Bakr M, Atkinson T, Ries M, Goslawski P, Klemz G, Müller R, Schälicke A, Jankowiak A. Generation of intense and coherent sub-femtosecond X-ray pulses in electron storage rings. Sci Rep 2020; 10:10093. [PMID: 32572105 PMCID: PMC7308344 DOI: 10.1038/s41598-020-67027-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2020] [Accepted: 06/02/2020] [Indexed: 11/17/2022] Open
Abstract
Temporally short X-ray pulses are an indispensable tool for the study of electron transitions close to the Fermi energy and structural changes in molecules undergoing chemical reactions which take place on a time-scale of hundreds of femtoseconds. The time resolution of experiments at 3rd generation light sources which produce intense synchrotron radiation is limited fundamentally by the electron-bunch length in the range of tens of picoseconds. Here we propose a new scheme for the generation of intense and coherent sub-femtoseconds soft X-ray pulses in storage rings by applying the Echo-Enabled Harmonic Generation (EEHG) method. Many issues for obtaining the EEHG structure such as two modulators and a radiator are solved by a paradigm shift in an achromatic storage ring cell. Numerical demonstration of the feasibility of the scheme for the BESSY II beam parameters is presented.
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Affiliation(s)
- J-G Hwang
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany.
| | - G Schiwietz
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - M Abo-Bakr
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - T Atkinson
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - M Ries
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - P Goslawski
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - G Klemz
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - R Müller
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - A Schälicke
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
| | - A Jankowiak
- Helmholtz-Zentrum Berlin (HZB), Albert-Einstein Straße 15, Berlin, 12489, Germany
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