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Nodari D, Sharma S, Jia W, Marsh AV, Lin YH, Fu Y, Lu X, Russkikh A, Harrison GT, Fatayer S, Gasparini N, Heeney M, Panidi J. Conjugated Polymer Heteroatom Engineering Enables High Detectivity Symmetric Ambipolar Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402568. [PMID: 38682831 DOI: 10.1002/adma.202402568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 04/04/2024] [Indexed: 05/01/2024]
Abstract
Solution-processed high-performing ambipolar organic phototransistors (OPTs) can enable low-cost integrated circuits. Here, a heteroatom engineering approach to modify the electron affinity of a low band gap diketopyrrolopyrole (DPP) co-polymer, resulting in well-balanced charge transport, a more preferential edge-on orientation and higher crystallinity, is demonstrated. Changing the comonomer heteroatom from sulfur (benzothiadiazole (BT)) to oxygen (benzooxadiazole (BO)) leads to an increased electron affinity and introduces higher ambipolarity. Organic thin film transistors fabricated from the novel PDPP-BO exhibit charge carrier mobility of 0.6 and 0.3 cm2 Vs⁻1 for electrons and holes, respectively. Due to the high sensitivity of the PDPP-based material and the balanced transport in PDPP-BO, its application as an NIR detector in an OPT architecture is presented. By maintaining a high on/off ratio (9 × 104), ambipolar OPTs are shown with photoresponsivity of 69 and 99 A W⁻1 and specific detectivity of 8 × 107 for the p-type operation and 4 × 109 Jones for the n-type regime. The high symmetric NIR-ambipolar OPTs are also evaluated as ambipolar photo-inverters, and show a 46% gain enhancement under illumination.
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Affiliation(s)
- Davide Nodari
- Department of Chemistry & Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Sandeep Sharma
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Weitao Jia
- Department of Chemistry & Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Adam V Marsh
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yen-Hung Lin
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, Hong Kong
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, Hong Kong
| | - Yuang Fu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, Hong Kong
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, Hong Kong
| | - Artem Russkikh
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - George T Harrison
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Shadi Fatayer
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Nicola Gasparini
- Department of Chemistry & Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Martin Heeney
- Department of Chemistry & Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Julianna Panidi
- Department of Chemistry & Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
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Shin J, Yoo H. Photogating Effect-Driven Photodetectors and Their Emerging Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:882. [PMID: 36903759 PMCID: PMC10005329 DOI: 10.3390/nano13050882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/15/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity. Nat Commun 2022; 13:1332. [PMID: 35277486 PMCID: PMC8917130 DOI: 10.1038/s41467-022-28922-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 02/14/2022] [Indexed: 11/09/2022] Open
Abstract
The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (Vo) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. Vo decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (Iph/Idark) increases from 22 to 1.7 × 107.
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Yang W, Lin Y, Inagaki S, Shimizu H, Ercan E, Hsu L, Chueh C, Higashihara T, Chen W. Low-Energy-Consumption and Electret-Free Photosynaptic Transistor Utilizing Poly(3-hexylthiophene)-Based Conjugated Block Copolymers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105190. [PMID: 35064648 PMCID: PMC8922097 DOI: 10.1002/advs.202105190] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 01/03/2022] [Indexed: 05/14/2023]
Abstract
Neuromorphic computation possesses the advantages of self-learning, highly parallel computation, and low energy consumption, and is of great promise to overcome the bottleneck of von Neumann computation. In this work, a series of poly(3-hexylthiophene) (P3HT)-based block copolymers (BCPs) with different coil segments, including polystyrene, poly(2-vinylpyridine) (P2VP), poly(2-vinylnaphthalene), and poly(butyl acrylate), are utilized in photosynaptic transistor to emulate paired-pulse facilitation, spike time/rate-dependent plasticity, short/long-term neuroplasticity, and learning-forgetting-relearning processes. P3HT serves as a carrier transport channel and a photogate, while the insulating coils with electrophilic groups are for charge trapping and preservation. Three main factors are unveiled to govern the properties of these P3HT-based BCPs: i) rigidity of the insulating coil, ii) energy levels between the constituent polymers, and iii) electrophilicity of the insulating coil. Accordingly, P3HT-b-P2VP-based photosynaptic transistor with a sought-after BCP combination demonstrates long-term memory behavior with current contrast up to 105 , short-term memory behavior with high paired-pulse facilitation ratio of 1.38, and an ultralow energy consumption of 0.56 fJ at an operating voltage of -0.0003 V. As far as it is known, this is the first work to utilize conjugated BCPs in an electret-free photosynaptic transistor showing great potential to the artificial intelligence technology.
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Affiliation(s)
- Wei‐Chen Yang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Shin Inagaki
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Hiroya Shimizu
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Ender Ercan
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Li‐Che Hsu
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
- Institute of Polymer Science and EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Tomoya Higashihara
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Wen‐Chang Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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A Review on Solution-Processed Organic Phototransistors and Their Recent Developments. ELECTRONICS 2022. [DOI: 10.3390/electronics11030316] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Today, more disciplines are intercepting each other, giving rise to “cross-disciplinary” research. Technological advancements in material science and device structure and production have paved the way towards development of new classes of multi-purpose sensory devices. Organic phototransistors (OPTs) are photo-activated sensors based on organic field-effect transistors that convert incident light signals into electrical signals. The organic semiconductor (OSC) layer and three-electrode structure of an OPT offer great advantages for light detection compared to conventional photodetectors and photodiodes, due to their signal amplification and noise reduction characteristics. Solution processing of the active layer enables mass production of OPT devices at significantly reduced cost. The chemical structure of OSCs can be modified accordingly to fulfil detection at various wavelengths for different purposes. Organic phototransistors have attracted substantial interest in a variety of fields, namely biomedical, medical diagnostics, healthcare, energy, security, and environmental monitoring. Lightweight and mechanically flexible and wearable OPTs are suitable alternatives not only at clinical levels but also for point-of-care and home-assisted usage. In this review, we aim to explain different types, working mechanism and figures of merit of organic phototransistors and highlight the recent advances from the literature on development and implementation of OPTs for a broad range of research and real-life applications.
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Wu FC, Li PR, Lin BR, Wu RJ, Cheng HL, Chou WY. Ultraviolet Light-Activated Charge Modulation Heterojunction for Versatile Organic Thin Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45822-45832. [PMID: 34520181 DOI: 10.1021/acsami.1c12390] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Organic thin film transistors (OTFTs) are a promising technology for the application of photosensors in smart wearable devices. Light-induced electrical behavior of OTFTs is explored to achieve diverse functional requirements. In most studies, OTFTs show an increased drain current (ID) under light irradiation. Here, we use an ultraviolet (UV) light absorption top layer, tris(8-hydroxyquinoline) aluminum (Alq3), to improve the UV light response of poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OTFTs. Unexpectedly, the Alq3-covered device operated at the accumulation mode demonstrates a decreased ID during the UV light irradiation. N,N'-Ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI, electron acceptor), pentacene (electron donor), and lithium fluoride (LiF, insulator) as an interlayer were inserted between the P3HT and the Alq3 layers. The PTCDI/Alq3-covered device also shows an unusual decrease in ID under the UV light but an increase in ID under the green light. The pentacene/Alq3-covered device shows an increased ID during the UV light irradiation and, unexpectedly, a memory effect in ID after removing the UV light. The LiF/Alq3-covered device exhibits an electrical behavior similar to the bare P3HT-based device under the UV light. Results of spectroscopic analyses and theoretical calculations have shown that the occurrence of charge transfer at heterojunctions during the UV light irradiation causes charge modulation in the multilayered P3HT-based OTFTs and then results in an unusual decrease or memory effect in ID. In addition, the unexpected ID reduction can be observed in the Alq3-covered poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-based OTFTs under UV light. The features, including opposite electrical responses to different wavelengths of light and optical memory effect, provide the multilayered P3HT-based OTFTs with potential for various optical applications, such as image recognition devices, optical logic gates, light dosimeters, and optical synapses.
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Affiliation(s)
- Fu-Chiao Wu
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Pei-Rong Li
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Bo-Ren Lin
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Ren-Jie Wu
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Horng-Long Cheng
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Yang Chou
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Chen Q, Lai D, He L, Li E, Liu Y, Zeng H, Chen H, Guo T. High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1035-1042. [PMID: 33378165 DOI: 10.1021/acsami.0c18281] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic phototransistors. This work provides a new approach for the development of high-performance phototransistors, which opens a new pathway for organic phototransistors in practical application.
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Affiliation(s)
- Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Dengxiao Lai
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yaqian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huaan Zeng
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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