Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature

Advancement of metal oxide nanomaterials on agri-food fronts

The application of metal oxide nanomaterials (MOx NMs) in the agrifood industry offers innovative solutions that can facilitate a paradigm shift in a sector that is currently facing challenges in meeting the growing requirements for food production, while safeguarding the environment from the impacts of current agriculture practices. This review comprehensively illustrates recent advancements and applications of MOx for sustainable practices in the food and agricultural industries and environmental preservation. Relevant published data point out that MOx NMs can be tailored for specific properties, enabling advanced design concepts with improved features for various applications in the agrifood industry. Applications include nano-agrochemical formulation, control of food quality through nanosensors, and smart food packaging. Furthermore, recent research suggests MOx's vital role in addressing environmental challenges by removing toxic elements from contaminated soil and water. This mitigates the environmental effects of widespread agrichemical use and creates a more favorable environment for plant growth. The review also discusses potential barriers, particularly regarding MOx toxicity and risk evaluation. Fundamental concerns about possible adverse effects on human health and the environment must be addressed to establish an appropriate regulatory framework for nano metal oxide-based food and agricultural products.

Solution-Processed Metal Oxide Thin-Film Transistor at Low Temperature via A Combination Strategy of H2 O2 -Inducement Technique and Infrared Irradiation Annealing

Solution processing has emerged as a promising technique for the fabrication of oxide thin-film transistors (TFTs), offering advantages such as low cost, high throughput, and exceptional compositional control. However, achieving reasonable electrical properties typically demands high annealing temperatures in the fabrication process. In addressing this challenge, a novel combination strategy is proposed that involves integrating the H2 O2 inducement technique with infrared (IR) irradiation annealing. The study investigates the effects of precursors and IR irradiation annealing temperatures on the electrical properties of In2 O3 TFTs. It is found that H2 O2 can help accelerate the decomposition of organic residues, while IR irradiation annealing could enhance the film densification. By employing the proposed strategy, metal oxide TFTs consisting of a Zr-Al-O dielectric fabricated at 230 °C and an In2 O3 channel layer fabricated at 185 °C demonstrated high performance with field-effect mobility = 31.7 cm2  V-1 ·s-1 , threshold voltage = 1.3 V, subthreshold swing = 0.13 V per decade, and on-to-off current ratio = 1.1 × 105 . This work demonstrates the proposed combinational strategy is a general method to fabricate not only metal oxide semiconductors but also dielectrics.

SnO2-Based Ultra-Flexible Humidity/Respiratory Sensor for Analysis of Human Breath

Developing ultraflexible sensors using metal oxides is challenging due to the high-temperature annealing step in the fabrication process. Here, we demonstrate the ultraflexible relative humidity (RH) sensor on food plastic wrap by using 808 nm near-infrared (NIR) laser annealing for 1 min at a low temperature (26.2-40.8 °C). The wettability of plastic wraps coated with sol-gel solution is modulated to obtain uniform films. The surface morphology, local temperature, and electrical properties of the SnO₂ resistor under NIR laser irradiation with a power of 16, 33, and 84 W/cm² are investigated. The optimal device can detect wide-range RH from 15% to 70% with small incremental changes (0.1-2.2%). X-ray photoelectron spectroscopy reveals the relation between the surface binding condition and sensing response. Finally, the proposed sensor is attached onto the face mask to analyze the real-time human breath pattern in slow, normal, and fast modes, showing potential in wearable electronics or respiration monitoring.

High-Sensitive MEMS Hydrogen Sulfide Sensor made from PdRh Bimetal Hollow Nanoframe Decorated Metal Oxides and Sensitization Mechanism Study

Here we report the fabrication of a high performance metal oxide semiconductor (MOS) sensor for the detection of hydrogen sulfide (H₂S) using PdRh bimetal hollow nanocube (HC) with Rh-rich hollow frame and Pd-rich core frame as sensitizing materials. PdRh bimetal HC with the edge-length about 10 nm was prepared by chemical etching PdRh bimetal solid nanocube (SC) in HNO₃ aqueous solution. The results of gas-sensing tests indicate that the response value order of the MEMS gas sensors based on MOSs (including ZnO, MoO₃ and SnO₂) is as follows: R_PdRh HC/MOS > R_PdRh SC/MOS > R_MOS. First, in the system of ZnO, gas sensor modified by PdRh (PdRh SC/ZnO and PdRh HC/ZnO) possess enhanced H₂S sensing performance with a better response and excellent low-concentration detection capability (down to 15 ppb) comparing to pure ZnO. The improved H₂S sensing performance could be attributed to the good conductivity of Rh-rich frame, the high catalytic activity of PdRh bimetal and formation of Schottky barrier-type junctions and defect. Second, PdRh HC/ZnO sensor shows better response (185-1 ppm of H₂S) compared to PdRh SC/ZnO sensor (108-1 ppm of H₂S), which is due to the higher specific surface area of PdRh HC/ZnO and good gas diffusion of the hollow structure. This work indicate that the sensitization characteristics of PdRh bimetal HC will provide new paradigms for the future development of the high performance sensor.

Ammonia Gas Sensor Response of a Vertical Zinc Oxide Nanorod-Gold Junction Diode at Room Temperature

Conventional metal oxide semiconductor (MOS) gas sensors have been investigated for decades to protect our life and property. However, the traditional devices can hardly fulfill the requirements of our fast developing mobile society, because the high operating temperatures greatly limit their applications in battery-loaded portable systems that can only drive devices with low power consumption. As ammonia is gaining importance in the production and storage of hydrogen, there is an increasing demand for energy-efficient ammonia detectors. Hence, in this work, a Schottky diode resulting from the contact between zinc oxide nanorods and gold is designed to detect gaseous ammonia at room temperature with a power consumption of 625 μW. The Schottky diode gas sensors benefit from the change of barrier height in different gases as well as the catalytic effect of gold nanoparticles. This diode structure, fabricated without expensive interdigitated electrodes and displaying excellent performance at room temperature, provides a novel method to equip mobile devices with MOS gas sensors.