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Xuyao S, Kim SB, Jung H, Kim J, Mo J, Jeong YJ, Jang J, An TK, Kim YH, Jeon J. Well-Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole-Based Copolymers: Organic Field-Effect Transistors and High-Voltage Logic Applications. Macromol Rapid Commun 2024; 45:e2300271. [PMID: 37400426 DOI: 10.1002/marc.202300271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Revised: 06/14/2023] [Accepted: 06/20/2023] [Indexed: 07/05/2023]
Abstract
A poly (3,6-bis(thiophen-2-yl)-2,5-bis(2-decyltetradecyl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione-co-(2,3-bis(phenyl)acrylonitrile)) (PDPADPP) copolymer, composed of diketopyrrolopyrrole (DPP) and a cyano (nitrile) group with a vinylene spacer linking two benzene rings, is synthesized via a palladium-catalyzed Suzuki coupling reaction. The electrical performance of PDPADPP in organic field-effect transistors (OFETs) and circuits is investigated. The OFETs based on PDPADPP exhibit typical ambipolar transport characteristics, with the as-cast OFETs demonstrating low field-effect hole and electron mobility values of 0.016 and 0.004 cm2 V-1 s-1 , respectively. However, after thermal annealing at 240 °C, the OFETs exhibit improved transport characteristics with highly balanced ambipolar transport, showing average hole and electron mobility values of 0.065 and 0.116 cm2 V-1 s-1 , respectively. To verify the application of the PDPADPP OFETs in high-voltage logic circuits, compact modeling using the industry-standard small-signal Berkeley short-channel IGFET model (BSIM) is performed, and the logic application characteristics are evaluated. The circuit simulation results demonstrate excellent logic application performance of the PDPADPP-based ambipolar transistor and illustrate that the device annealed at 240 °C exhibits ideal circuit characteristics.
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Affiliation(s)
- Song Xuyao
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, South Korea
| | - Sang Beom Kim
- Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hanggyo Jung
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jaekyum Kim
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Jaewan Mo
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Yong Jin Jeong
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
- Department of Materials Science and Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Tae Kyu An
- Department of IT∙Energy Convergence (BK21 FOUR), Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
- Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea
| | - Yun-Hi Kim
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, South Korea
| | - Jongwook Jeon
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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Tang X, Jo Y, Kwon HJ, Wu K, Li Z, Kim S, Park CE, An TK, Lee J, Kim SH. Electrohydrodynamic-Jet-Printed Cinnamate-Fluorinated Cross-Linked Polymeric Dielectrics for Flexible and Electrically Stable Operating Organic Thin-Film Transistors and Integrated Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50149-50162. [PMID: 34636542 DOI: 10.1021/acsami.1c08562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Herein, printable polymer series containing different portions of cinnamate and perfluorinated phenyl functionalities, namely, polyperfluorostyrene-co-poly(vinylbenzyl cinnamates) (PFS-co-PVBCi (x:y)) copolymers, were synthesized and applied as gate dielectrics for organic thin-film transistors (OTFTs). The polymeric dielectrics were successfully printed via electrostatic force-assisted dispensing mode of electrohydrodynamic jet printing. The dielectric characteristics of the printed polymers, such as surface energy, dielectric constant, leakage current, atomic depth profiles, and deposited semiconducting layer characteristics, were clearly identified. In particular, the difference in driving stability of OTFTs according to the type of polymer was analyzed in detail and a possible mechanism was proposed. Results suggested that PFS-co-PVBCi (3:7) led to optimized consequences, yielding an almost negligible Vth shift under continuous bias stress. Through this, we successfully implemented flexible OTFT and logic devices using printed PFS-co-PVBCi (3:7) dielectrics with stable operation properties. Therefore, we believe that this study will facilitate the printing and synthesis of polymer dielectrics to produce printed and flexible OTFTs.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Yohan Jo
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Kaibin Wu
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Zhijun Li
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Seonghyeon Kim
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Tae Kyu An
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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Wang S, Wang Z, Huang Y, Hu Y, Yuan L, Guo S, Zheng L, Chen M, Yang C, Zheng Y, Qi J, Yu L, Li H, Wang W, Ji D, Chen X, Li J, Li L, Hu W. Directly Patterning Conductive Polymer Electrodes on Organic Semiconductor via In Situ Polymerization in Microchannels for High-Performance Organic Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:17852-17860. [PMID: 33825449 DOI: 10.1021/acsami.1c01386] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Conductive polymers are considered promising electrode materials for organic transistors, but the reported devices with conductive polymer electrodes generally suffer from considerable contact resistance. Currently, it is still highly challenging to pattern conductive polymer electrodes on organic semiconductor surfaces with good structure and interface quality. Herein, we develop an in situ polymerization strategy to directly pattern the top-contacted polypyrrole (PPy) electrodes on hydrophobic surfaces of organic semiconductors by microchannel templates, which is also applicable on diverse hydrophobic and hydrophilic surfaces. Remarkably, a width-normalized contact resistance as low as 1.01 kΩ·cm is achieved in the PPy-contacted transistors. Both p-type and n-type organic field-effect transistors (OFETs) exhibit ideal electrical characteristics, including almost hysteresis-free, low threshold voltage, and good stability under long-term test. The facile patterning method and high device performance indicate that the in situ polymerization strategy in confined microchannels has application prospects in all-organic, transparent, and flexible electronics.
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Affiliation(s)
- Shuguang Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Yinan Huang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Yongxu Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Liqian Yuan
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Shujing Guo
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Lei Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, 300072 Tianjin, China
| | - Mingxi Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, 300072 Tianjin, China
| | - Chenhuai Yang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, 300072 Tianjin, China
| | - Yingshuang Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Jiannan Qi
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Li Yu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Hongwei Li
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, 518060 Shenzhen, China
| | - Wenchong Wang
- Physikalisches Institut and Center for Nanotechnology (CeNTech), Universität Münster, 48149 Münster, Germany
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Jie Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, 350207 Fuzhou, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, 300072 Tianjin, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, 350207 Fuzhou, China
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Tang X, Kwon HJ, Li Z, Wang R, Kim SJ, Park CE, Jeong YJ, Kim SH. Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1043-1056. [PMID: 33356127 DOI: 10.1021/acsami.0c18477] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Direct drawing techniques have contributed to the ease of patterning soft electronic materials, which are the building blocks of analog and digital integrated circuits. In parallel with the printing of semiconductors and electrodes, selective deposition of gate insulators (GI) is an equally important factor in simplifying the fabrication of integrated devices, such as NAND and NOR gates, and memory devices. This study demonstrates the fabrication of six types of printed GI layers (high/low-k polymer and organic-inorganic hybrid material), which are utilized as GIs in organic field-effect transistors (OFETs), using the electrostatic-force-assisted dispensing printing technique. The selective printing of GIs on the gate electrodes enables us to develop practical integrated devices that go beyond unit OFET devices, exhibiting robust switching performances, non-destructive operations, and high gain values. Moreover, the flexible integrated devices fabricated using this technique exhibit excellent operational behavior. Therefore, this facile fabrication technique can pave a new path for the production of practical integrated device arrays for next-generation devices.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Zhijun Li
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Rixuan Wang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Se Jin Kim
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Yong Jin Jeong
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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