1
|
Wang R, Li Y, Jia S, Wang W, Hu Y, Sun H, Meng X, Huang S, Song Y, Zhu C. In Situ Vanadium Modification Induced a Back Interfacial Field Passivation Effect toward Efficient Kesterite Solar Cells beyond 11% Efficiency. ACS APPLIED MATERIALS & INTERFACES 2024; 16:46341-46350. [PMID: 39171734 DOI: 10.1021/acsami.4c09508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Realization of a high-quality back electrode interface (BEI) with suppressed recombination is crucial for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. To achieve this goal, the construction of a traditional chemical passivation effect has been widely adopted and investigated. However, there is currently a lack of reports concerning the construction of a field passivation effect (FPE) for the BEI. Herein, considering the characteristic of the negligible difference in ionic radius between Mo (0.65 Å) and V (0.64 Å) as well as the presence of one less valence electron compared to Mo, vanadium (V) was employed and in situ incorporated into the MoSe2 interfacial layer during the deposition of the Mo:V electrode and selenization process. This allowed for the establishment of a desirable in situ VI-FPE interface with p-MoSe2:V/p-CZTSSe at the BEI. The p-type characteristic in MoSe2:V is attributed to the presence of the VMo acceptor; notably, the Fermi energy level of MoSe2:V has shifted downward by 0.62 eV compared to MoSe2, thereby facilitating the formation of an optimized band alignment between MoSe2:V and the absorber. Consequently, the photovoltaic parameters of the cell-FPE have experienced a significant increase due to the enhanced carrier transportation efficiency compared to cell-ref, resulting in a remarkable improvement in efficiency from 8.28 to 11.11%.
Collapse
Affiliation(s)
- Rensheng Wang
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Yongfeng Li
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, Jilin 130012, People's Republic of China
| | - Sisi Jia
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Weifeng Wang
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Yuhang Hu
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Huanhuan Sun
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Xiuqing Meng
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Shihua Huang
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Yanping Song
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Chengjun Zhu
- Key Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot, Inner Mongolia 010021, People's Republic of China
| |
Collapse
|
2
|
Wang C, Wang T, Liu Y, Li M, Ma D, Ding Z, Zhu Y, Sun Y, Sun X, Shi L, Ding N, Li Y, Yao B. Improvement of Performance of CZTSSe Solar Cells by the Synergistic Effect of Back Contact Modification and Ag Doping. ACS APPLIED MATERIALS & INTERFACES 2024; 16:26182-26194. [PMID: 38736356 DOI: 10.1021/acsami.4c02987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
To improve the performance of Cu2ZnSn(S,Se)4 solar cells, a strategy is proposed to improve the quality of absorber and back interface simultaneously by substituting V-doped Mo (Mo:V) for a conventional Mo back electrode and incorporating Ag into the Cu2ZnSn(S,Se)4 (ACZTSSe) absorber in this work. Since p+-type V-doped MoSe2 (MoSe2:V) is formed in the site between the absorber and Mo:V during selenization, the conventional Mo/n-MoSe2 back contact is modified to Mo:V/p+-MoSe2:V, a back surface passivation field (BSPF) is established at the back interface, the band bending of MoSe2:V is downward and that of bottom of the absorber is upward. Further investigation reveals that the back contact modification and Ag doping have a synergistic effect on inhibiting carrier recombination, decreasing series resistance and increasing shunt resistance, thereby leading to the PCE of device without antireflection coating increased from 8.61 to 10.98%, which is larger than the sum of increase in PCE induced by Ag doping alone (8.61 to 9.66%) and back contact modification alone (8.61 to 9.63%). It is demonstrated that the synergistic effect stems mainly from the strengthened BSPF and the further reduced back contact barrier height. The former is due to the increased difference in work function (WF) between MoSe2:V and absorber induced by the reduced WF of the absorber after Ag doping and the raised WF of MoSe2:V after V doping. The latter is due to the downshifted valence band maximum of absorber after Ag doping. This work highlights the synergistic effect of back contact modification and Ag doping on improving the performance of CZTSSe solar cells and also provides an effective way to suppress carrier recombination.
Collapse
Affiliation(s)
- Chunkai Wang
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Ting Wang
- College of Physical Science and Technology, Dalian University, Dalian 116622, China
| | - Yue Liu
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Mengge Li
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Ding Ma
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Zhanhui Ding
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Yan Zhu
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Yuting Sun
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Xiaofei Sun
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Liyuan Shi
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Ning Ding
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Yongfeng Li
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Bin Yao
- State Key Laboratory of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| |
Collapse
|
3
|
Xu SZ, Song YP, Yao B, Li MG, Ding ZH, Deng R, Liang HN, Du XB, Li YF. Improvement of Efficiency in Kesterite Solar Cells by Intentionally Inserting a Thin MoS 2 Layer into the Back Interface. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11026-11034. [PMID: 38361494 DOI: 10.1021/acsami.3c18045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
A Mo(S,Se)2 interfacial layer is formed inevitably and uncontrollably between the Mo electrode and Cu2ZnSn(S,Se)4 (CZTSSe) absorber during the selenization process, which significantly influences the performance of CZTSSe solar cells. In this work, an ultrathin MoS2 layer is intentionally inserted into Mo/CZTSSe to reduce the recombination and thus optimize the interface quality. It is revealed that the absorber exhibits a continuous and compact morphology with bigger grains and remarkably without pinholes across the surface or cross-sectional regions after MoS2 modification. Benefitting from this, the shunt resistance (RSh) of the device increased evidently from ∼395 to ∼634 Ω·cm2, and simultaneously, the reverse saturation current density (J0) realized an effective depression. As a result, the power conversion efficiency (PCE) of the MoS2-modified device reaches 9.64% via the optimization of the thickness of the MoS2 layer, indicating performance improvements with respect to the MoS2-free case. Furthermore, the main contribution to the performance improvement is derived and analyzed in detail from the increased RSh, decreased J0, and diode ideality factor. Our results suggest that the Mo/CZTSSe interface quality and performance of CZTSSe solar cells can be modulated and improved by appropriately designing and optimizing the thickness of the inserted MoS2 layer.
Collapse
Affiliation(s)
- Su-Zhen Xu
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Yan-Ping Song
- Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Bin Yao
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Meng-Ge Li
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Zhan-Hui Ding
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Rui Deng
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, P. R. China
| | - Heng-Nan Liang
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Xiao-Bo Du
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Yong-Feng Li
- State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
| |
Collapse
|
4
|
Chang Q, Yuan S, Fu J, Gao Q, Zhao Y, Xu Z, Kou D, Zhou Z, Zhou W, Wu S. Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se) 2 Solar Cells via a Novel Indium-Doped CdS Strategy. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5149-5158. [PMID: 35041389 DOI: 10.1021/acsami.1c12587] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Indium doping of cadmium sulfide (CdS) by chemical bath deposition (CBD) can be an efficient strategy to boost the CIGSSe efficiency. However, limited by the extremely low solubility of In2S3, it is difficult to increase the In doping contents and inhibit the band energy-level regulation for CdS through the traditional CBD process. In this work, we perform a novel CBD method to prepare an indium-doped CdS (In:CdS) buffer, in which the indium source is sequentially slowly added in the growing aqueous solution. In this process, the In ion concentration involved in the real-time deposition is significantly reduced. Thus, compact and uniform In:CdS with higher indium doping content is obtained. Indium doping can elevate the CdS conduction band edge and construct a more favorable spike band alignment with a CIGSSe absorber. Moreover, it introduces efficient carrier transport and reduced interface defect density. As a result, improved CIGSSe heterojunction quality is realized by utilizing In:CdS. Also, the solution-processed CIGSSe device with In:CdS as a buffer yields a high efficiency of 16.4%, with a high VOC of 670 mV and an FF of 75.3%.
Collapse
Affiliation(s)
- Qianqian Chang
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Shengjie Yuan
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Junjie Fu
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Qianqian Gao
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Yunhai Zhao
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Zhen Xu
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Dongxing Kou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Zhengji Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Wenhui Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Sixin Wu
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| |
Collapse
|