Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors

High performance CsBi3I10/PCBM bulk heterojunction perovskite photodetector

Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using C s B i 3 I 10/p h e n y l-C 61-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at -2V bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that C s B i 3 I 10/P C B M bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.

Photochromic Uranyl-Based Coordination Polymer for Quantitative and On-Site Detection of UV Radiation Dose

A highly sensitive detection of ultraviolet (UV) radiation is required in a broad range of scientific research, chemical industries, and health-related applications. Traditional UV photodetectors fabricated by direct wide-band-gap inorganic semiconductors often suffer from several disadvantages such as complicated manufacturing procedures, requiring multiple operations and high-cost instruments to obtain a readout. Searching for new materials or simple strategies to develop UV dosimeters for quantitative, accurate, and on-site detection of UV radiation dose is still highly desirable. Herein, a photochromic uranyl-based coordination polymer [(UO2)(PBPCA)·DMF]·DMF (PBPCA = pyridine-3,5-bis(phenyl-4-carboxylate), DMF = N,N'-dimethylformamide, denoted as SXU-1) with highly radiolytic and chemical stabilities was successfully synthesized via the solvothermal method at 100 °C. Surprisingly, the fresh samples of SXU-1 underwent an ultra-fast UV-induced (365 nm, 2 mW) color variation from yellow to orange in less than 1 s, and then the color changed further from orange to brick red after the subsequent irradiation, inspiring us to develop a colorimetric dosimeter based on red-green-blue (RGB) parameters. The mechanism of radical-induced photochromism was intensively investigated by UV-vis absorption spectra, EPR analysis, and SC-XRD data. Furthermore, SXU-1 was incorporated into an optoelectronic device to fabricate a novel dosimeter for convenient, quantitative, and on-site detection of UV radiation dose.

Synthesis and Characterization of Highly Crystalline Bi-Functional Mn-Doped Zn2SiO4 Nanostructures by Low-Cost Sol-Gel Process

Herein, we demonstrate a process for the synthesis of a highly crystalline bi-functional manganese (Mn)-doped zinc silicate (Zn₂SiO₄) nanostructures using a low-cost sol-gel route followed by solid state reaction method. Structural and morphological characterizations of Mn-doped Zn₂SiO₄ with variable doping concentration of 0.03, 0.05, 0.1, 0.2, 0.5, 1.0, and 2.0 wt% were investigated by using X-ray diffraction and high-resolution transmission electron microscopy (HR-TEM) techniques. HR-TEM-assisted elemental mapping of the as-grown sample was conducted to confirm the presence of Mn in Zn₂SiO_4. Photoluminescence (PL) spectra indicated that the Mn-doped Zn₂SiO₄ nanostructures exhibited strong green emission at 521 nm under 259 nm excitation wavelengths. It was observed that PL intensity increased with the increase of Mn-doping concentration in Zn₂SiO₄ nanostructures, with no change in emission peak position. Furthermore, magnetism in doped Zn₂SiO₄ nanostructures was probed by static DC magnetization measurement. The observed photoluminescence and magnetic properties in Mn-doped Zn₂SiO₄ nanostructures are discussed in terms of structural defect/lattice strain caused by Mn doping and the Jahn-Teller effect. These bi-functional properties of as-synthesized Zn₂SiO₄ nanostructures provide a new platform for their potential applications towards magneto-optical and spintronic and devices areas.

Graphene quantum dots based MnFe2O4@SiO2 magnetic nanostructure as a pH-sensitive fluorescence resonance energy transfer (FRET) system to enhance the anticancer effect of the drug

Among the various methods of targeted drug delivery, magnetic nanoparticles been considered for a long time due to local drug delivery, reduction of side effects, and controlled drug release. In this work, fluorescence resonance energy transfer (FRET) system MnFe₂O₄@SiO₂@ graphene quantum dots /DAU with 49.08 emu^-1 magnetism was prepared as pH-sensitive nanoplatform to enhance the anti-cancer effect of daunorubicin (DAU) drug (in the obtained FRET system, DAU act as acceptor molecule and graphene quantum dots act as donor molecule). The efficiency of the drug loaded on the nanoplatform in vitro is 78%. DAU drug release from nanoplatform at pHs of 7.4 and 5.5 during 48 h is 21% and 60%, respectively. Release sensitive to pH facilitates the application of prepared nanoplatform for DAU delivery. The results of MTT-assay and annexin V-FITC/PI show that MnFe₂O₄@SiO₂@ graphene quantum dots /DAU induces cell apoptosis by inhibiting the growth of more than 95% of MCF-7 cells. Also, according to the results, it was found that MnFe₂O₄@SiO₂@ graphene quantum dots /DAU can inhibit 66.65% cell cycle in the sub-G1 phase. Therefore, due to the anti-cancer activity of MnFe₂O₄@SiO₂@ graphene quantum dots /DAU, this biological nanoscale can be considered a candidate for drug delivery.

Nanoscale mapping of surface strain in tapered nanorods using confocal photoluminescence spectroscopy

The strain occurs spontaneously at the heterogeneous interfaces of virtually all crystalline materials. Consequently, the analysis across multiple interfaces requires a complementary characterization scheme with a resolution that fits the deformation scale. By implementing two-photon confocal laser scanning nanoscopy with an axial resolution of 10 nm, we extract the surface strain from the photoluminescence (PL) spectra, epitomized by a 2-fold enhancement at the tapered tips in comparison to the substrate of ZnO nanorods. We firstly traced the well-established contribution from quantum confinement (QC) to PL shift in three geometrically classified regions: (I) a strongly tapered region where the diameter increases from 3 to 20 nm; (II) a weakly tapered region with a gradually increasing diameter from 20 to 58 nm; (III) round cylindrical region interfacing the sapphire substrate. The measured PL shift influenced by the deformation is significantly stronger than the attained QC effect. Particularly, surface strain at the strongly tapered region turned out to drastically increase the PL shift which matches well with the analysis based on the surface to volume ratio incorporating mechanical parameters such as the compliance tensor component, strain dislocation constant, and surface stress. The surface strain increased at a lower temperature, further disclosing its inherent dependence on the thermal expansion coefficients in clear contrast to the temperature-invariant characteristics of QC.

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD

In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga₂O₃/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga₂O₃ (including a, ε, ε/β, and β) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an in situ GaON dielectric layer improved the responsivity of Ga₂O₃/p-GaN photodetectors by 20 times. All Ga₂O₃/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a I_photo/I_dark ratio of 4.1 × 10³ (1.8 × 10³) under 254 nm (365 nm) light were obtained for the β-Ga₂O₃/p-GaN photodetector at 0 V bias. Furthermore, the β-Ga₂O₃/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 10¹⁴ Jones (2.44 × 10¹³ Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the Ga₂O₃/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered Ga₂O₃/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.

Ultraviolet Photodetector Based on Poly(3,4-Ethylenedioxyselenophene)/ZnO Core-Shell Nanorods p-n Heterojunction

In this work, we successfully assembled an organic-inorganic core-shell hybrid p-n heterojunction ultraviolet photodetector by the electropolymerization deposition of poly(3,4-ethylenedioxyselenophene) (PEDOS) on the surface of zinc oxide nanoarrays (ZnO NRs). The structures of composite were confirmed by FTIR, UV-Vis, XRD and XPS. Mott-Schottky analysis was used to study the p-n heterojunction structure. The photodetection properties of ZnO NRs/PEDOS heterojunction ultraviolet photodetector were systematically investigated current-voltage (I-V) and current-time (I-t) analysis under different bias voltages. The results showed that PEDOS films uniformly grew on ZnO NRs surface and core-shell structure was formed. The p-n heterojunction structure was formed with strong built-in electric field between ZnO NRs and PEDOS. Under the irradiation of UV light, the device showed a good rectification behavior. The responsivity, detection rate and the external quantum efficiency of the ultraviolet photodetector reached to 247.7 A/W, 3.41 × 10¹² Jones and 84,000% at 2 V bias, respectively. The rise time (τ_r) and fall time (τ_f) of ZnO NRs/PEDOS UV photodetector were obviously shortened compared to ZnO UV photodetector. The results show that the introduction of PEDOS effectively improves the performance of the UV photodetector.

Facile synthesized zinc oxide nanorod film humidity sensor based on variation in optical transmissivity

Variation in the transmitted light intensity from metal oxide thin films with moisture content provides a great opportunity to use them for humidity sensing. Herein, we have developed a novel and simple humidity sensor based on ZnO nanorod (ZNR) thin films which work as transmission-based sensing elements in an in-house fabricated sensing setup. The ZNR sensing element shows excellent linear sensing performance in the relative humidity (RH) range 10-90% and does not show any hysteresis. A maximum change in optical power of ∼95 μW is observed with the change in RH in the range 10-90%, for the sample with the smallest crystallite size (ZNR1) and highest pore diameter of the ZNR film. Also, a maximum sensitivity of 1.104 μW/% RH is observed for the ZNR1 sample which drops to 0.604 μW/% RH for the highest crystallite size sample (ZNR4). The presence of oxygen vacancies and the micro-porous nature of the film allow the absorption of water vapour on the film which deflects light at different angles that vary with the moisture content. The experimental results suggest that the ZNR film with a smaller crystallite size and larger pore diameter is more sensitive for humidity measurements. Further, an improved sensing performance is perceived in ZNRs because of the larger surface area of the nanorods. The ZNR based sensing elements do not suffer from ageing effects and exhibit high repeatability (88.74%). Further, the humidity sensor has a response time of 62 seconds and recovery time of 100 seconds which can be considered as a fairly quick response.

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity

The superior optical and electronic characteristics of quasi-two-dimensional β-Ga₂O₃ make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga₂O₃ flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga₂O₃ heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 10⁵ A/W), a large detectivity (D* of ∼4.3 × 10¹³ Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 10⁸%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga₂O₃ PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga₂O₃ PD also exhibits better photoelectric performance than the bare β-Ga₂O₃ PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga₂O₃ DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.

Ultrafast Lifetime and Bright Emission from Graphene Quantum Dots Using Plasmonic Nanogap Cavities

Graphene quantum dots (GQDs) are quasi-zero-dimensional, carbon-based luminescent nanomaterials that possess desirable physical properties, such as high photostability, low cytotoxicity, good biocompatibility, and excellent water solubility; however, their long radiative lifetimes significantly limit their use in, e.g., light emitting devices where a fast spontaneous emission rate is essential. Despite a few reports on GQD fluorescence enhancements using metal nanostructures, studies of enhanced spontaneous emission rate remain outstanding. Here, we report fast and bright luminescence by coupling gap plasmon modes to nanoparticle emitters. Through precise control over the nanoparticle's local density of states (LDOS), we achieved a 220-fold increase in the PL intensity. The shortest radiative lifetime obtained was below 8.0 ps and limited by the instrument response, which is over 288-fold shorter than the lifetime of uncoupled GQDs. These findings may benefit the future development of rapid displays and open the possibility of constructing high-frequency classical or quantum telecommunication systems.

Facile Synthesis, Static, and Dynamic Magnetic Characteristics of Varying Size Double-Surfactant-Coated Mesoscopic Magnetic Nanoparticles Dispersed Stable Aqueous Magnetic Fluids

The present work reports the synthesis of a stable aqueous magnetic fluid (AMF) by dispersing double-surfactant-coated Fe3O4 magnetic nanoparticles (MNPs) in water using a facile ambient scalable wet chemical route. MNPs do not disperse well in water, resulting in low stability. This was improved by dispersing double-surfactant (oleic acid and sodium oleate)-coated MNPs in water, where cross-linking between the surfactants improves the stability of the AMFs. The stability was probed by rheological measurements and all the AMF samples showed a good long-term stability and stability against a gradient magnetic field. Further, the microwave spin resonance behavior of AMFs was studied in detail by corroborating the experimental results obtained from the ferromagnetic resonance (FMR) technique to theoretical predictions by appropriate fittings. A broad spectrum was perceived for AMFs which indicates strong ferromagnetic characteristics. The resonance field shifted to higher magnetic field values with the decrease in particle size as larger-size MNPs magnetize and demagnetize more easily since their magnetic spins can align in the field direction more definitely. The FMR spectra was fitted to obtain various spin resonance parameters. The asymmetric shapes of the FMR spectra were observed with a decrease in particle sizes, which indicates an increase in relaxation time. The relaxation time increased with a decrease in particle sizes (sample A to D) from 37.2779 ps to 42.8301 ps. Further, a detailed investigation of the structural, morphological, and dc magnetic properties of the AMF samples was performed. Room temperature dc magnetic measurements confirmed the superparamagnetic (SPM) characteristics of the AMF and the M-H plot for each sample was fitted with a Langevin function to obtain the domain magnetization, permeability, and hydrodynamic diameter of the MNPs. The saturation magnetization and coercivity of the AMF samples increased with the increase in dispersed MNPs' size of the samples. The improvement in the stability and magnetic characteristics makes AMFs suitable candidates for various biomedical applications such as drug delivery, magnetic fluid hyperthermia, and biomedicines.

Economic Friendly ZnO-Based UV Sensors Using Hydrothermal Growth: A Review

Ultraviolet (UV) sensors offer significant advantages in human health protection and environmental pollution monitoring. Amongst various materials for UV sensors, the zinc oxide (ZnO) nanostructure is considered as one of the most promising candidates due to its incredible electrical, optical, biomedical, energetic and preparing properties. Compared to other fabricating techniques, hydrothermal synthesis has been proven to show special advantages such as economic cost, low-temperature process and excellent and high-yield production. Here, we summarize the latest progress in research about the hydrothermal synthesis of ZnO nanostructures for UV sensing. We particularly focus on the selective hydrothermal processes and reveal the effect of key factors/parameters on ZnO architectures, such as the laser power source, temperature, growth time, precursor, seeding solution and bases. Furthermore, ZnO hydrothermal nanostructures for UV applications as well as their mechanisms are also summarized. This review will therefore enlighten future ideas of low-temperature and low-cost ZnO-based UV sensors.

Fabrication of GaN nano-towers based self-powered UV photodetector

The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high I_Light/I_Dark ratio (> 10⁴), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 10⁴%), lower noise equivalent power (~ 10^–13 WHz^−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W-1 at 375 nm under 65 mW cm-2 illumination, rectification ratio: 5690 at ±1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W-1, 10.22 at ±1 V) and maintains the 100 ms response time.