Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer

Spectrally narrow band-edge photoluminescence from AgInS2-based core/shell quantum dots for electroluminescence applications

This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer.

Progress towards blue emitting MgO-ZnO-Ga2O3 nanocomposites synthesized by bio mediated route

MgO-ZnO-Ga2O3 nanocomposites are synthesized by solution combustion method using Aloe Vera gel as a reducing agent to increase the efficiency of blue emission. The appearance of Bragg reflections corresponding to MgO, ZnO and Ga2O3 clearly indicates the formation of nanocomposites. The surface morphology consists irregular shape and sized NPs. The Energy dispersive X-ray analysis confirms the purity of the sample. The band energy gap was tuned to 3.1 eV. The Photoluminescence excitation and emission spectra was discussed and compared it with emission spectra of individual oxides as well as with other reported blue emitted nanophosphors. Further, the chromaticity coordinates and Color correlated temperature coordinates clearly confirms their warm blue emission. Further, the powder dusting method was employed to collect the latent fingerprints on the pores and non-pores surfaces. The synthesized MgO-ZnO-Ga2O3 nanocomposites exhibits well-resolved ridge patterns that can be used to identify latent finger prints with clarity. From all these results, the present synthesized MgO-ZnO-Ga2O3 nanocomposite might find an application in display technology as a blue nanophosphor material and for latent finger print detection in crime investigation.

Insight into the interface engineering between methylammonium lead halide perovskites and gallium oxide: a first-principles approach

Interface engineering of the organo-lead halide perovskite devices has shown the potential to improve their efficiency and stability. In this study, the atomic, electronic, optical and transport characteristics of MAPbI3/Ga2O3 and MAPbCl3/Ga2O3 interfaces were investigated by using first-principles calculations. Eight different interfacial models were established and the interfacial properties were discussed. The results show that the PbI/O configuration exhibits the largest bonding strength out of all eight interfacial configurations. Owing to the larger interfacial interaction, the charge transfer at the PbI/O interface is significantly more than that at the other interfaces. The analysis of absorption spectra indicates that the Ga-terminated perovskite/Ga2O3 heterostructures are expected to have great potential for efficient optoelectronic applications. The analysis of transmission spectra shows that the MA/O configurations with more transmission peaks near the Fermi level exhibit lower resistance compared to others. The results of our study could help understand the interfacial engineering mechanism between perovskite and Ga2O3.

Piezo-phototronic effect regulated broadband photoresponse of a-Ga2O3/ZnO heterojunction

Amorphous Ga₂O₃ (a-Ga₂O₃) films have attracted considerable attention in the field of photodetectors due to their excellent optical absorption response and photoelectric properties. However, there are few studies that have utilized the piezo-phototronic effect to regulate the broadband photoresponse of Ga₂O₃-based photodetectors. Here, a flexible a-Ga₂O₃/ZnO heterojunction was constructed, which demonstrated a broadband response range from deep ultraviolet (265 nm) to the near-infrared (1060 nm) and realized a bidirectional adjustable photocurrent response via the piezo-phototronic effect. Under 265 nm illumination and 0.5 V bias, the responsivity and detectivity of the a-Ga₂O₃/ZnO heterojunction reached up to 12.19 A W^-1 and 4.71 × 10¹¹ Jones under 0.164% compressive strain, corresponding to enhancements of 67.7% and 66.8% compared to those under a strain-free state, respectively. Moreover, the broadband photoresponse of the a-Ga₂O₃/ZnO heterojunction beyond the bandgap limit was tunable under bidirectional strain. The working mechanism of photoresponse performance for the a-Ga₂O₃/ZnO heterojunction at different wavelengths was elucidated in detail. Oxygen vacancy-assisted carrier generation was found to be influenced by the wavelength of incident light, which mainly determined the broadband photoresponse of the heterojunction. The modulation of the a-Ga₂O₃/ZnO heterojunction photodetector was interpreted in light of the strain-induced regulation of the barrier height. This work represents an important step toward the development of adjustable broadband photodetectors based on a-Ga₂O₃ films.

High-performance layer-structured Si/Ga2O3/CH3NH3PbI3 heterojunction photodetector based on a Ga2O3 buffer interlayer

Organic-inorganic metal halide perovskite-based photodetectors (PDs) have attracted great attention because they exhibit extraordinary optoelectronic performances due to advantages such as a low trap-state density and large absorption coefficient. As a buffer layer, G a ₂ O ₃ can block electron hole recombination, passivate an Si surface, reduce trap density, and improve the ability of electron tunneling. Here, we demonstrate a trilayer hybrid structure (S i/G a ₂ O ₃/C H ₃ N H ₃ P b I ₃) composed of an n-type silicon wafer, G a ₂ O ₃ interlayer, and C H ₃ N H ₃ P b I ₃ thin film. The effect of different G a ₂ O ₃ layer thicknesses on the characteristics of a PD was studied, which shows that the responsivity first increases and then decreases with an increase in the G a ₂ O ₃ film thickness; the optimized G a ₂ O ₃ thickness is 300 nm. Additionally, the optimal responsivity, detectivity, and the rise and decay times are 7.2m A W ^-1, 7.448×10¹⁰ Jones, and 39 and 1.7 ms, respectively. This device has a better performance because G a ₂ O ₃ and perovskite have a matched energy level. We believe our work could provide a new way to fabricate high-performance optoelectronic devices.

Green-solvent-processed formamidinium-based perovskite solar cells with uniform grain growth and strengthened interfacial contact via a nanostructured tin oxide layer

Green-solvent-processed perovskite solar cells (PSCs) have reached an efficiency of 20%, showing great promise in safe industrial production. However, the nucleation process in green-solvent-based deposition is rarely optimized, resulting in randomized crystallization and much lowered reported efficiencies. Herein, a nanostructured tin oxide nanorods (SnO₂-NRs) substrate is utilized to prepare a high-quality formamidinium (FA)-based perovskite film processed from a green solvent of triethyl phosphate (TEP) with a low toxic antisolvent of dibutyl ether (DEE). Compared with SnO₂ nanoparticles, the oriented SnO₂-NRs can accelerate the formation of heterogeneous nucleation sites and retard the crystal growth process of the perovskite film, resulting in a high-quality perovskite film with uniform grain growth. Furthermore, a chlorine-terminated bifunctional supramolecule (Cl-BSM) is introduced to passivate the increasing interfacial defects due to the vast contact area in SnO₂-NRs. Correspondingly, the substrate design of SnO₂-NRs with Cl-BSM increases the power conversion efficiency (PCE) of green-solvent-processed PSCs to 22.42% with an open-circuit voltage improvement from 1.02 to 1.12 V, which can be attributed to the uniform grain growth and reduced carrier recombination at the SnO₂-NRs/perovskite interface. More importantly, the photo and humidity stabilities of the unencapsulated device for up to 500 and 1000 hours are also achieved with negligible interfacial delamination after aging. This work provides a new perspective on the future industrial scale production of PSCs using environment-friendly solvents with compatible substrate design.

Interfacial Dipole poly(2-ethyl-2-oxazoline) Modification Triggers Simultaneous Band Alignment and Passivation for Air-Stable Perovskite Solar Cells

To promote the performance of perovskite solar cells (PSCs), its theoretical power conversion efficiency (PCE) and high stability, elaborative defect passivation, and interfacial engineering at the molecular level are required to regulate the optoelectric properties and charge transporting process at the perovskite/hole transport layer (HTL) interfaces. Herein, we introduce for the first time a multifunctional dipole polymer poly(2-ethyl-2-oxazoline) (PEOz) between the perovskite and Spiro-OMeTAD HTL in planar n-i-p PSCs, which advances the PSCs toward both high efficiency and excellent stability by stimulating three beneficial effects. First, the ether–oxygen unshared electron pairs in PEOz chemically react with unsaturated Pb²⁺ on the perovskite surfaces by forming a strong Pb–O bond, which effectively reduces the uncoordinated defects on the perovskite surfaces and enhances the absorption ability of the resulting PSCs. Second, the dipole induced by PEOz at the perovskite/HTL interface can decrease the HOMO and LUMO level of Spiro-OMeTAD and optimize the band alignment between these layers, thereby suppressing the interfacial recombination and accelerating the hole transport/extraction ability in the cell. Third, the hygroscopic PEOz thin film can protect perovskite film from water erosion by absorbing the water molecules before perovskite does. Finally, the PEOz-modified PSC exhibits an optimized PCE of 21.86%, with a high short-circuit current density (Jsc) of 24.88 mA/cm², a fill factor (FF) of 0.79, and an open-circuit voltage (Voc) of 1.11 V. The unencapsulated devices also deliver excellent operation stability over 300 h in an ambient atmosphere with a humidity of 30~40% and more than 10 h under thermal stress.

Metal oxide charge transporting layers for stable high-performance perovskite solar cells

This review summarizes the recent progress in metal oxide charge transporting layers to achieve stable high-performance perovskite solar cells.

Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties

Tuning optical or magnetic properties of nanoparticles, by addition of impurities, for specific applications is usually achieved at the cost of band gap and work function reduction. Additionally, conventional strategies to develop nanoparticles with a large band gap also encounter problems of phase separation and poor crystallinity at high alloying degree. Addressing the aforementioned trade-offs, here we report Ni-Zn nanoferrites with energy band gap (E_g) of ≈3.20 eV and a work function of ≈5.88 eV. While changes in the magnetoplasmonic properties of the Ni-Zn ferrite were successfully achieved with the incorporation of bismuth ions at different concentrations, there was no alteration of the band gap and work function in the developed Ni-Zn ferrite. This suggests that with the addition of minute impurities to ferrites, independent of their changes in the band gap and work function, one can tune their magnetic and optical properties, which is desired in a wide range of applications such as nanobiosensing, nanoparticle based catalysis, and renewable energy generation using nanotechnology.