1
|
Liang D, Jiang B, Liu Z, Chen Z, Gao Y, Yang S, He R, Wang L, Ran J, Wang J, Gao P, Li J, Liu Z, Sun J, Wei T. Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO 2/Si(100) for Monolithic Optoelectronic Integration. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305576. [PMID: 38520076 PMCID: PMC11132040 DOI: 10.1002/advs.202305576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 01/09/2024] [Indexed: 03/25/2024]
Abstract
The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si-based integrated circuits and GaN-enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high-quality single-crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in-plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out-of-plane orientation of GaN can be guided by multi-step growth on transfer-free graphene. For the first time, the monolithic integration of light-emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS-compatible SiO2/Si(100). Remarkably, the self-powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 105 A/W and 4.64 × 1013 Jones, respectively. This work breaks a bottleneck of synthesizing large area single-crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si-integrated optoelectronic devices.
Collapse
Affiliation(s)
- Dongdong Liang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Bei Jiang
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Zhetong Liu
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871P. R. China
| | - Zhaolong Chen
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Yaqi Gao
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Shenyuan Yang
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
| | - Rui He
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Lulu Wang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Junxue Ran
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Peng Gao
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871P. R. China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- College of EnergySoochow Institute for Energy and Materials InnovationS (SIEMIS)Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy TechnologiesSoochow UniversitySuzhou215006P. R. China
| | - Jingyu Sun
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- College of EnergySoochow Institute for Energy and Materials InnovationS (SIEMIS)Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy TechnologiesSoochow UniversitySuzhou215006P. R. China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing100083P. R. China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| |
Collapse
|
2
|
Wang L, Yang S, Zhou F, Gao Y, Duo Y, Chen R, Yang J, Yan J, Wang J, Li J, Zhang Y, Wei T. Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306132. [PMID: 37800612 DOI: 10.1002/smll.202306132] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 09/19/2023] [Indexed: 10/07/2023]
Abstract
Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer-scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h-BN composite buffer layer and its application in flexible InGaN-based light-emitting diodes (LEDs) is demonstrated. Guided by first-principles calculations, the nucleation and bonding mechanism of GaN and AlN on h-BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2 -plasma-treated h-BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high-temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain-relaxation model for III-nitrides on h-BN is proposed. Eventually, the mechanical exfoliation of single-crystalline GaN film and LED through weak interaction between multilayer h-BN is realized. The flexible free-standing thin-film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.
Collapse
Affiliation(s)
- Lulu Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shenyuan Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fan Zhou
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yaqi Gao
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yiwei Duo
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Renfeng Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiankun Yang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
3
|
Blanton EW, Motala MJ, Prusnick TA, Hilton A, Brown JL, Bhattacharyya A, Krishnamoorthy S, Leedy K, Glavin NR, Snure M. Spalling-Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102668. [PMID: 34541817 DOI: 10.1002/smll.202102668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Revised: 08/12/2021] [Indexed: 06/13/2023]
Abstract
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and 2D materials, using 2D boron nitride (BN)-on-sapphire templates are demonstrated. The van der Waals (vdW) BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for vdW bonding. A tensilely stressed Ni layer sputtered on top of the film induces controlled spalling fracture that propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity are greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a back-end selected area lift-off technique is developed which allows for isolation and transfer of individual devices or arbitrary shapes.
Collapse
Affiliation(s)
| | | | | | | | | | - Arkka Bhattacharyya
- Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Sriram Krishnamoorthy
- Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, 84112, USA
- Materials Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kevin Leedy
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, 45433, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| |
Collapse
|
4
|
Gong Z. Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:842. [PMID: 33806237 PMCID: PMC8065746 DOI: 10.3390/nano11040842] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 03/16/2021] [Accepted: 03/22/2021] [Indexed: 02/07/2023]
Abstract
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
Collapse
Affiliation(s)
- Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China;
- Foshan Debao Display Technology Co Ltd., Room 508-1, Level 5, Block A, Golden Valley Optoelectronics, Nanhai District, Foshan 528200, China
| |
Collapse
|