1
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Aslam MA, Leitner S, Tyagi S, Provias A, Tkachuk V, Pavlica E, Dienstleder M, Knez D, Watanabe K, Taniguchi T, Yan D, Shi Y, Knobloch T, Waltl M, Schwingenschlögl U, Grasser T, Matković A. All van der Waals Semiconducting PtSe 2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. NANO LETTERS 2024; 24:6529-6537. [PMID: 38789104 PMCID: PMC11157664 DOI: 10.1021/acs.nanolett.4c00956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Revised: 04/30/2024] [Accepted: 05/02/2024] [Indexed: 05/26/2024]
Abstract
Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.
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Affiliation(s)
- M. Awais Aslam
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Simon Leitner
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Shubham Tyagi
- Physical
Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Alexandros Provias
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Vadym Tkachuk
- Laboratory
of Organic Matter Physics, University of
Nova Gorica, Vipavska
13, Nova Gorica SI-5000, Slovenia
| | - Egon Pavlica
- Laboratory
of Organic Matter Physics, University of
Nova Gorica, Vipavska
13, Nova Gorica SI-5000, Slovenia
| | | | - Daniel Knez
- Institute
of Electron Microscopy and Nanoanalysis, Graz University of Technology (NAWI Graz), Steyrergasse 17, 8010 Graz, Austria
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dayu Yan
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Youguo Shi
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Theresia Knobloch
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Michael Waltl
- Christian
Doppler Laboratory for Single-Defect Spectroscopy at the Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Udo Schwingenschlögl
- Physical
Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Tibor Grasser
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Aleksandar Matković
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
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2
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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3
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Ji J, Zhou Y, Zhou B, Desgué E, Legagneux P, Jepsen PU, Bøggild P. Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe 2 Films by Terahertz Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37883033 DOI: 10.1021/acsami.3c09792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.
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Affiliation(s)
- Jie Ji
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Yingqiu Zhou
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Binbin Zhou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Eva Desgué
- Thales Research and Technology, Palaiseau 91767, France
| | | | - Peter Uhd Jepsen
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Peter Bøggild
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
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4
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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5
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Kang MS, Lee WY, Yoon YG, Choi JW, Kim GS, Kim SH, Park NW, Lee SK. Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe 2/MoS 2 Heterostructures Using Wet-Transfer Stacking. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51881-51888. [PMID: 36355622 DOI: 10.1021/acsami.2c14065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.
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Affiliation(s)
- Min-Sung Kang
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Won-Yong Lee
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala75103, Sweden
| | - Young-Gui Yoon
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Jae Won Choi
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Si-Hoo Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - No-Won Park
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Sang-Kwon Lee
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
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6
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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7
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Miao J, Zhang X, Tian Y, Zhao Y. Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3845. [PMID: 36364620 PMCID: PMC9658022 DOI: 10.3390/nano12213845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/23/2022] [Accepted: 10/26/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic factors, including high contact resistance, strong interfacial scattering, and unintentional doping. Among these challenges, contact resistance is a dominant issue, and important progress has been made in recent years. In this review, the Schottky-Mott model is introduced to show the ideal Schottky barrier, and we further discuss the contribution of the Fermi-level pinning effect to the high contact resistance in 2D semiconductor devices. In 2D FETs, Fermi-level pinning is attributed to the high-energy metal deposition process, which would damage the lattice of atomically thin 2D semiconductors and induce the pinning of the metal Fermi level. Then, two contact structures and the strategies to fabricate low-contact-resistance short-channel 2D FETs are introduced. Finally, our review provides practical guidelines for the realization of high-performance 2D-semiconductors-based FETs with low contact resistance and discusses the outlook of this field.
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Affiliation(s)
- Jialei Miao
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Xiaowei Zhang
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Ye Tian
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Yuda Zhao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan 430056, China
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8
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Parhizkar S, Prechtl M, Giesecke AL, Suckow S, Wahl S, Lukas S, Hartwig O, Negm N, Quellmalz A, Gylfason K, Schall D, Wuttig M, Duesberg GS, Lemme MC. Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors. ACS PHOTONICS 2022; 9:859-867. [PMID: 35308407 PMCID: PMC8931762 DOI: 10.1021/acsphotonics.1c01517] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Indexed: 05/11/2023]
Abstract
Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe2) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe2-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe2 for PDs far into the IR wavelength range. Our PtSe2 PDs integrated by direct growth outperform PtSe2 PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe2 an attractive 2D material for optoelectronics and PICs.
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Affiliation(s)
- Shayan Parhizkar
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Maximilian Prechtl
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Anna Lena Giesecke
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Sophia Wahl
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Sebastian Lukas
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
| | - Oliver Hartwig
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Nour Negm
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Arne Quellmalz
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Kristinn Gylfason
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Daniel Schall
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
- Black Semiconductor
GmbH, Schloss-Rahe-Straße
15, 52072 Aachen, Germany
| | - Matthias Wuttig
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Georg S. Duesberg
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Max C. Lemme
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
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9
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Lee WY, Kang MS, Kim GS, Choi JW, Park NW, Sim Y, Kim YH, Seong MJ, Yoon YG, Saitoh E, Lee SK. Interface-Induced Seebeck Effect in PtSe 2/PtSe 2 van der Waals Homostructures. ACS NANO 2022; 16:3404-3416. [PMID: 35133142 DOI: 10.1021/acsnano.2c00359] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe2/PtSe2 van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe2 over high-resistance PtSe2 thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe2 films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe2/PtSe2 van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe2 (10 nm)/PtSe2 (2 nm) homostructure approximately 42% compared to that of a pure PtSe2 (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.
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Affiliation(s)
- Won-Yong Lee
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Min-Sung Kang
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jae Won Choi
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - No-Won Park
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Yumin Sim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Yun-Ho Kim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Maeng-Je Seong
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Young-Gui Yoon
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Eiji Saitoh
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Sang-Kwon Lee
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
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Ni J, Fu Q, Ostrikov KK, Gu X, Nan H, Xiao S. Status and prospects of Ohmic contacts on two-dimensional semiconductors. NANOTECHNOLOGY 2021; 33:062005. [PMID: 34649226 DOI: 10.1088/1361-6528/ac2fe1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2021] [Accepted: 10/14/2021] [Indexed: 06/13/2023]
Abstract
In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.
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Affiliation(s)
- Junhao Ni
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Quangui Fu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics and QUT Centre for Materials Science, Queensland University of Technology (QUT), Brisbane QLD 4000, Australia
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
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