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Verma D, Chen TC, Liu B, Lai CS. Bi 2O 2Se-based CBRAM integrated artificial synapse. Heliyon 2023; 9:e22512. [PMID: 38107308 PMCID: PMC10724560 DOI: 10.1016/j.heliyon.2023.e22512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 10/30/2023] [Accepted: 11/14/2023] [Indexed: 12/19/2023] Open
Abstract
Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi2O2Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi2O2Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi2O2Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi2O2Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi2O2Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.
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Affiliation(s)
- Dharmendra Verma
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Tsung-Cheng Chen
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
- Department of Nephrology, Chang Gung Memorial Hospital, Linkou 33302, Taiwan
- Department of Materials Engineering, Ming-Chi University of Technology, New Taipei City 24301, Taiwan
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2
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Liu B, Zheng X, Verma D, Zhao Y, Liang H, Li LJ, Chen J, Lai CS. Bi 2O 2Se-Based Bimode Noise Generator for the Application of Generative Adversarial Networks. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49478-49486. [PMID: 37823797 DOI: 10.1021/acsami.3c10106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
In the emerging technology, the generative aversive networks (GANs), randomness, and unpredictability of inputting noises are the keys to the uniqueness, diversity, robustness, and security of the generated images. Compared with deterministic software-based noise generation, hardware-based noise generation introduces physical entropy sources, such as electronic and photonic noises, to add unpredictability. In this study, bimode Bi2O2Se-based noise generators have been demonstrated for the application of GANs. Harnessing its ultrahigh carrier mobility, excellent air stability, marvelous optoelectronic performance, as well as the unique surface resistive switching effect and defect locations in the energy diagram, Bi2O2Se provides a good material platform to easily integrate with multiple device architectures for generating noises in different physical sources. The noise of the black current mode in a photodetector architecture and the random telegraph noise in a memristor mode were measured, characterized, compared, and analyzed. A method of Markov chain equipped with K-means clustering was carried out to calculate the discrete noise states and the transition probability matrix between them. To evaluate the generated properties of the GANs based on the hardware noise source, the inception score and Fréchet inception distance were evaluated.
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Affiliation(s)
- Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - XingYi Zheng
- Department of Computer Science and Information Engineering, Chang Gung University, Guishan Dist., Taoyuan City 33302, Taiwan
| | - Dharmendra Verma
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan
| | - Yudi Zhao
- School of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China
| | - Hanyuan Liang
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Kowloon, Hong Kong 999077, China
| | - Jenhui Chen
- Department of Computer Science and Information Engineering, Chang Gung University, Guishan Dist., Taoyuan City 33302, Taiwan
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan
- Artificial Intelligence and Green Technology Research Center, Chang Gung University, Guishan Dist., Taoyuan 33302,Taiwan
- Department of Nephrology, Chang Gung Memorial Hospital, Guishan Dist., Linkou 33305, Taiwan
- Department of Materials Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan
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Dan Z, Yang B, Song Q, Chen J, Li H, Gao W, Huang L, Zhang M, Yang M, Zheng Z, Huo N, Han L, Li J. Type-II Bi 2O 2Se/MoTe 2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18101-18113. [PMID: 36989425 DOI: 10.1021/acsami.3c01807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.
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Affiliation(s)
- Zhiying Dan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
| | - Baoxiang Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Qiqi Song
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Hengyi Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Menglong Zhang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
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Kim Y, Jeon SB, Jang BC. Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:710. [PMID: 36839078 PMCID: PMC9963271 DOI: 10.3390/nano13040710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 02/07/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.
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Affiliation(s)
- Yeongkwon Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
| | - Seung-Bae Jeon
- Department of Electronic Engineering, Hanbat National University, 125 Dongseo-daero, Yuseong-gu, Daejeon 34158, Republic of Korea
| | - Byung Chul Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
- School of Electronics Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea
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Verma D, Liu B, Chen TC, Li LJ, Lai CS. Bi 2O 2Se-based integrated multifunctional optoelectronics. NANOSCALE ADVANCES 2022; 4:3832-3844. [PMID: 36133346 PMCID: PMC9470018 DOI: 10.1039/d2na00245k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/15/2022] [Indexed: 06/16/2023]
Abstract
The prominent light-matter interaction in 2D materials has become a pivotal research area that involves either an archetypal study of inherent mechanisms to explore such interactions or specific applications to assess the efficacy of such novel phenomena. With scientifically controlled light-matter interactions, various applications have been developed. Here, we report four diverse applications on a single structure utilizing the efficient photoresponse of Bi2O2Se with precisely tuned multiple optical wavelengths. First, the Bi2O2Se-based device performs the function of optoelectronic memory using UV (λ = 365 nm, 1.1 mW cm-2) for the write-in process with SiO2 as the charge trapping medium followed by a +1 V bias for read-out. Second, associative learning is mimicked with wavelengths of 525 nm and 635 nm. Third, using similar optical inputs, functions of logic gates "AND", "OR", "NAND", and "NOR" are realized with response current and resistance as outputs. Fourth is the demonstration of a 4 bit binary to the decimal converter using wavelengths of 740 nm (LSB), 595 nm, 490 nm, and 385 nm (MSB) as binary inputs and output response current regarded as equivalent decimal output. Our demonstration is a paradigm for Bi2O2Se-based devices to be an integral part of future advanced multifunctional electronic systems.
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Affiliation(s)
- Dharmendra Verma
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology Beijing 100124 People's Republic of China
| | - Tsung-Cheng Chen
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Lain-Jong Li
- Department of Mechanical Engineering, University of Hong Kong Pokfulam Road 999077 Hong Kong
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
- Department of Nephrology, Chang Gung Memorial Hospital Linkou 33302 Taiwan
- Department of Materials Engineering, Ming-Chi University of Technology New Taipei City 24301 Taiwan
- Artificial Intelligence Research Center, Chang Gung University Taoyuan 33302 Taiwan
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Liu B, Chang YF, Li J, Liu X, Wang LA, Verma D, Liang H, Zhu H, Zhao Y, Li LJ, Hou TH, Lai CS. Bi 2O 2Se-Based True Random Number Generator for Security Applications. ACS NANO 2022; 16:6847-6857. [PMID: 35333049 PMCID: PMC9048684 DOI: 10.1021/acsnano.2c01784] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.
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Affiliation(s)
- Bo Liu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Ying-Feng Chang
- Artificial
Intelligence Research Center, Chang Gung
University, Guishan District, 33302 Taoyuan, Taiwan
| | - Juzhe Li
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Xu Liu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Le An Wang
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Dharmendra Verma
- Department
of Electronic Engineering, Chang Gung University, Guishan District, 33302 Taoyuan, Taiwan
| | - Hanyuan Liang
- School
of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Hui Zhu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Yudi Zhao
- School
of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China
| | - Lain-Jong Li
- Department
of Mechanical Engineering, The University
of Hong Kong, Pokfulam Road, 999077, Hong Kong
| | - Tuo-Hung Hou
- Department
of Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, 300 Hsinchu, Taiwan
| | - Chao-Sung Lai
- Artificial
Intelligence Research Center, Chang Gung
University, Guishan District, 33302 Taoyuan, Taiwan
- Department
of Electronic Engineering, Chang Gung University, Guishan District, 33302 Taoyuan, Taiwan
- Department
of Nephrology, Chang Gung Memorial Hospital, Guishan District, 33305, Linkou, Taiwan
- Department
of Materials Engineering, Ming Chi University
of Technology, Taishan
District, 24301 New Taipei City, Taiwan
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Liao K, Lei P, Tu M, Luo S, Jiang T, Jie W, Hao J. Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:32606-32623. [PMID: 34253011 DOI: 10.1021/acsami.1c07665] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.
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Affiliation(s)
- Kanghong Liao
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Peixian Lei
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Meilin Tu
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Songwen Luo
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Ting Jiang
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong China
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