Tailoring the Optical Properties of Sputter-Deposited Gold Nanostructures on Nanostructured Titanium Dioxide Templates Based on In Situ Grazing-Incidence Small-Angle X-ray Scattering Determined Growth Laws

In situ studies revealing the effects of Au surfactant on the formation of ultra-thin Ag layers using high-power impulse magnetron sputter deposition

Introducing metallic nanoparticles, such as Au, on a substrate as a surfactant or wetting inducer has been demonstrated as a simple but effective way to facilitate the formation of ultra-thin silver layers (UTSLs) during the subsequent Ag deposition. However, most studies have paid much attention to the applications of UTSLs assisted by metallic surfactants but neglected the underlying mechanisms of how the metallic surfactant affects the formation of UTSL. Herein, we have applied in situ grazing-incidence wide-/small-angle X-ray scattering to reveal the effects of the Au surfactant or seed layer (pre-deposited Au nanoparticles) on the formation of UTSL by high-power impulse magnetron sputter deposition (HiPIMS) on a zinc oxide (ZnO) thin film. The comprehensive and in-depth analysis of the in situ X-ray scattering data revealed that the pre-deposited Au nanoparticles can act as additional defects or growth cores for the sputtered Ag atoms despite using HiPIMS, which itself forms many nucleation sites. As a result, the formation of a continuous and smooth UTSL is reached earlier in HiPIMS compared with bare ZnO thin films. Based on the mechanism revealed by the in situ measurements, we provide insight into the formation of UTSL and further UTSL-based applications.

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone. In this study, we show the impact of Al seeding on the AlN/Si interface and resulting changes in crystal quality, film morphology, and polarity of GaN/AlN stacks grown by magnetron sputter epitaxy. X-ray diffraction measurements demonstrate the improvement of the crystal quality of the AlN and subsequently the GaN film by the Al seeding. Nanoscale structural and chemical investigations using scanning transmission electron microscopy reveal the inversion of the AlN film polarity. It is proposed that N-polar growth induced by Al seeding is related to the formation of a polycrystalline oxygen-rich AlN interlayer partially capped by an atomically thin Si-rich layer at the AlN/Si interface. Complementary aqueous KOH etch studies of GaN/AlN stacks demonstrate that purely metal-polar and N-polar layers can be grown on a macroscopic scale by controlling the amount of Al seeding.

Achieving Good Bonding Strength of the Cu Layer on PET Films by Pretreatment of a Mixed Plasma of Carbon and Copper

Cu layers were fabricated on PET films with and without pretreatment by a mixed plasma composed of carbon and copper using a magnetron sputtering technique for potential application as the flexible copper-clad laminate (FCCL) in 5G technology. In order to evaluate the effect of carbon plasma on the composited layer, the graphite target current was adjusted from 0.5 to 2.0 A. The microstructures and properties of Cu layers on PET films with different treatments were measured by an X-ray powder diffractometer, X-ray photoelectron spectroscope, Raman spectroscope, scanning electron microscope, transmission electron microscope, scratching test, indentation test, and four-probe detector. The results showed that the organic polymer carbon structure on the surface of PET films was changed to inorganic amorphous carbon due to the effect of the carbon plasma. At the same time, the active free radicals formed in the transition process react with metal copper ions to form organometallic compounds. Under the treatment of a mixed plasma of carbon and copper, the C/Cu mixed layer was formed on the PET film at the top of the substrate. Due to the presence of C/Cu mixed interlayers, the bonding strengths between the final Cu layers and the PET film substrates were improved, and the strongest bonding strength appeared when the graphite target current was 1.0 A. In addition, the presence of the C/Cu mixed interlayer enhanced the toughness of the Cu layer on PET film. It was proposed that the good bonding strength in combination and the enhanced toughness for the Cu layer on a PET film was due to the formation of a C/Cu mixed interlayer induced by the pretreatment of a mixed plasma of carbon and copper.

State of the art of ultra-thin gold layers: formation fundamentals and applications

Fabrication of ultra-thin gold (Au) layers (UTGLs) has been regarded as the key technique to achieve applications with tunable optical response, flexible sensors and electronic devices. Various strategies have been developed to optimize the wetting process of Au, resulting in the formation of UTGLs at a minimum thickness. The related studies on UTGLs attracted huge attention in recent years. On the one hand, the growth processes of UTGLs on different substrates were in-depth probed by advanced in situ characterization techniques and the effects of optimization strategies on the growth of UTGLs were also revealed. On the other hand, based on the understanding of the growth behavior and the assistance of optimization strategies, various applications of UTGLs were realized based on optical/plasmon responses, surface-enhanced Raman scattering and as electrodes for various sensors and electronic devices, as well as being seed layers for thin film growth. In this focused review, both the fundamental and practical studies on UTGLs in the most recent years are elaborated in detail. The growth processes of UTGLs revealed by in situ characterization techniques, such as grazing-incidence small-angle X-ray scattering (GISAXS), as well as the state of the art of UTGL-based applications, are reviewed.

Biotin-streptavidin sandwich integrated PDA-ZnO@Au nanocomposite based SPR sensor for hIgG detection

SPR is a mature optical biosensor technology for detecting biomolecular interactions without fluorescence or enzyme labeling. In this paper, we acquire a sensitive SPR biosensor based on ZnO@Au nanomaterial, and the classical sandwich strategy using biotin-streptavidin for secondary signal amplification system was used to detect human IgG (hIgG). Nano-zinc oxide (ZnO) has the dual characteristics of nanocomposite and traditional zinc oxide, with large specific surface area and high chemical activity. Besides, the gold-coated ZnO nanocrystals improve the optical properties of ZnO and enlarge the loading capacity with better biocompatibility. Therefore, a sensing platform based on PDA-ZnO@Au nanomaterial was constructed on gold film modified with mercaptan. Meanwhile, the biotin-avidin system in SPR sensor field has been rapidly developed and applied. Due to the highly selection of streptavidin (SA) and biotin interact with each other, GNRs-SA-biotin-Ab₂ (GSAB-Ab₂) were constructed to obtain the secondary enhancement of SPR signal. The influences of experimental conditions were also discussed. With optimal experimental conditions, introducing GSAB-Ab₂ conjugate combined with a sandwich format, the resulting SPR biosensor provides a favourable range for hIgG determination of 0.0375-40 μg mL^-1. The minimum detection concentration of hIgG that can be obtained by this method is approximately 67-fold lower than the conventional SPR sensor based on gold film. The sensitivity of SPR biosensor is significantly improved in a certain range.