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Chen Q, Yang K, Liang M, Kang J, Yi X, Wang J, Li J, Liu Z. Lattice modulation strategies for 2D material assisted epitaxial growth. NANO CONVERGENCE 2023; 10:39. [PMID: 37626161 PMCID: PMC10457265 DOI: 10.1186/s40580-023-00388-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.
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Affiliation(s)
- Qi Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kailai Yang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Kang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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Zhang H, Min J, Chung T, Lee K, Gnanasekar P, Min J, Park T, Wang Y, Ng TK, Schwingenschlögl U, Gan Q, Ooi BS. Nanostructured Gallium Nitride Membrane at Wafer Scale for Photo(Electro)catalytic Polluted Water Remediation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205612. [PMID: 36529948 PMCID: PMC9951313 DOI: 10.1002/advs.202205612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/15/2022] [Indexed: 06/17/2023]
Abstract
Photo(electro)catalysis methods have drawn significant attention for efficient, energy-saving, and environmental-friendly organic contaminant degradation in wastewater. However, conventional oxide-based powder photocatalysts are limited to UV-light absorption and are unfavorable in the subsequent postseparation process. In this paper, a large-area crystalline-semiconductor nitride membrane with a distinct nanoporous surface is fabricated, which can be scaled up to a full wafer and easily retrieved after photodegradation. The unique nanoporous surface enhances broadband light absorption, provides abundant reactive sites, and promotes the dye-molecule reaction with adsorbed hydroxyl radicals on the surface. The superior electric contact between the nickel bottom layer and nitride membrane facilitates swift charge carrier transportation. In laboratory tests, the nanostructure membrane can degrade 93% of the dye in 6 h under illumination with a small applied bias (0.5 V vs Ag/AgCl). Furthermore, a 2 inch diameter wafer-scale membrane is deployed in a rooftop test under natural sunlight. The membrane operates stably for seven cycles (over 50 h) with an outstanding dye degradation efficiency (>92%) and satisfied average total organic carbon removal rate (≈50%) in each cycle. This demonstration thus opens the pathway toward the production of nanostructured semiconductor layers for large-scale and practical wastewater treatment using natural sunlight.
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Affiliation(s)
- Huafan Zhang
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Jung‐Hong Min
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
- Currently with the Nanophotonic Device Research CenterKorea Photonics Technology Institute (KOPTI)Gwangju61007Republic of Korea
| | - Tae‐Hoon Chung
- Light Source Research DivisionKorea Photonics Technology Institute (KOPTI)Gwangju61007Republic of Korea
| | - Kwangjae Lee
- Physical Science and Engineering Division (PSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
- Currently with the Department of Electrical EngineeringStanford UniversityStanfordCA94305USA
| | - Paulraj Gnanasekar
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Jung‐Wook Min
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Tae‐Yong Park
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Yue Wang
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Tien Khee Ng
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division (PSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Qiaoqiang Gan
- Physical Science and Engineering Division (PSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
| | - Boon S. Ooi
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Saudi Arabia
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Zebardastan N, Bradford J, Lipton-Duffin J, MacLeod J, Ostrikov KK, Tomellini M, Motta N. High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum. NANOTECHNOLOGY 2022; 34:105601. [PMID: 36562509 DOI: 10.1088/1361-6528/aca8b2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon electronics. To obtain a suitable material for large scale applications, it is essential to achieve perfect control of size, quality, growth rate and thickness. Here we show that this control on epitaxial graphene can be achieved by exploiting the face-to-face annealing of SiC in ultra-high vacuum. With this method, Si atoms trapped in the narrow space between two SiC wafers at high temperatures contribute to the reduction of the Si sublimation rate, allowing to achieve smooth and virtually defect free single graphene layers. We analyse the products obtained on both on-axis and off-axis 4H-SiC substrates in a wide range of temperatures (1300 °C-1500 °C), determining the growth law with the help of x-ray photoelectron spectroscopy (XPS). Our epitaxial graphene on SiC has terrace widths up to 10μm (on-axis) and 500 nm (off-axis) as demonstrated by atomic force microscopy and scanning tunnelling microscopy, while XPS and Raman spectroscopy confirm high purity and crystalline quality.
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Affiliation(s)
- Negar Zebardastan
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane 4000, QLD, Australia
| | - Jonathan Bradford
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Josh Lipton-Duffin
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane 4000, QLD, Australia
| | - Jennifer MacLeod
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane 4000, QLD, Australia
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane 4000, QLD, Australia
| | - Massimo Tomellini
- Dipartimento di Scienze eTecnologie Chimiche, Università degli Studi di Roma Tor Vergata, Via della Ricerca Scientifica, I-00133 Rome, Italy
- Istitutodi Struttura della Materia, CNR, Via Fosso del Cavaliere 100, I-00133 Rome, Italy
| | - Nunzio Motta
- School of Chemistry and Physics, Queensland University of Technology, Brisbane 4000, QLD, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane 4000, QLD, Australia
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Lu Y, Krishna S, Liao CH, Yang Z, Kumar M, Liu Z, Tang X, Xiao N, Hassine MB, Thoroddsen ST, Li X. Transferable Ga 2O 3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47922-47930. [PMID: 36241169 PMCID: PMC9614724 DOI: 10.1021/acsami.2c14661] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga2O3 epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga2O3 and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga2O3 membrane. Beyond that, benefiting from the weak vdW bond between Ga2O3 and mica substrate, in this work, the Ga2O3 membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga2O3 and conductive n-type β-Ga2O3. Vertical photodetectors are fabricated based on the exfoliated Ga2O3 membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga2O3 membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga2O3 electronics.
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Affiliation(s)
- Yi Lu
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Shibin Krishna
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Che-Hao Liao
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Ziqiang Yang
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Mritunjay Kumar
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Zhiyuan Liu
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Xiao Tang
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Na Xiao
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Mohamed Ben Hassine
- CoreLabs, King Abdullah University of Science and Technology
(KAUST), Thuwal23955-6900, Kingdom of Saudi
Arabia
| | - Sigurdur T. Thoroddsen
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Xiaohang Li
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
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