Silicon Quantum Dot-Polymer Fabry-Pérot Resonators with Narrowed and Tunable Emissions

Not all silicon quantum dots are equal: photostability of silicon quantum dots with and without a thick amorphous shell

Luminescent colloidal silicon quantum dots (SiQDs) are sustainable alternatives to metal-based QDs for various optical applications. While the materials are reliant on their photoluminescence efficiency, the relationship between the structure and photostability of SiQDs is yet to be well studied. An amorphous silicon (a-Si) shell was recently discovered in SiQDs prepared by thermally-processed silicon oxides. As a-Si is known as a source of defects upon UV irradiation, the disordered shell could potentially have an adverse effect on the optical properties of nanoparticles. Herein, the photostability of ∼5 nm diameter SiQDs with an amorphous shell was compared with that of over-etched SiQDs of equivalent dimensions that bore an a-Si shell of negligible thickness. An UV-induced degradation study was conducted by subjecting toluene solutions of SiQDs to 365 nm light-emitting diodes (LEDs) under an inert atmosphere for predetermined times up to 72 hours. The structure, composition, and optical responses of the exposed SiQDs were evaluated.

Single-atom infrared emission in doped silicon nanocrystals

Silicon luminescence, due to silicon being abundant, non-toxic and harmless, is a topic of pivotal importance in optoelectronics and biological imaging. However, a major challenge in developing high-efficiency silicon light sources is the relatively weak allowable transitions. This study focuses on single atom-doped silicon nanocrystals (Si NCs) and theoretically investigates the emission behavior of single atoms within a tetrahedral coordination field. Doping a single atom in Si NCs can result in a ∼102 times improvement at least in the squared transition dipole moment (TDM2), and induce a spectral shift towards near- and mid-infrared wavelengths. These findings offer a strong foundation for designing Si NCs for on-chip optical communication and single photon emitters.

Si-H Surface Groups Inhibit Methacrylic Polymerization: Thermal Hydrosilylation of Allyl Methacrylate with Silicon Nanoparticles

Hydrogen-terminated silicon nanoparticles (H-SiNPs) inhibit anerobic thermal autopolymerization of methacrylates. When heated to 100 °C under an inert atmosphere, allyl methacrylate (AMA) was stable for at least 95 h in the presence of 1.2 wt % H-SiNPs, exhibiting less than 0.15% conversion, whereas the neat monomer solidified within 24 h (over 10% conversion after 34 h). A mechanism is proposed that is based on H-transfer from SiNPs to the thermally activated methacrylic dimer biradical, quenching autopolymerization. An analysis of SiNPs isolated after heating in AMA reveals the grafting of ester groups. Thermal hydrosilylation offers a facile way to attach an allyl group to the surface of SiNPs.

"Turning the dials": controlling synthesis, structure, composition, and surface chemistry to tailor silicon nanoparticle properties

Silicon nanoparticles (SiNPs) can be challenging to prepare with defined size, crystallinity, composition, and surface chemistry. As is the case for any nanomaterial, controlling these parameters is essential if SiNPs are to realize their full potential in areas such as alternative energy generation and storage, sensors, and medical imaging. Numerous teams have explored and established innovative synthesis methods, as well as surface functionalization protocols to control these factors. Furthermore, substantial effort has been expended to understand how the abovementioned parameters influence material properties. In the present review we provide a commentary highlighting the benefits and limitations of available methods for preparing silicon nanoparticles as well as demonstrations of tailoring optical and electronic properties through definition of structure (i.e., crystalline vs. amorphous), composition and surface chemistry. Finally, we highlight potential opportunities for future SiNP studies.

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.