Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications

Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state

Surface states have been a longstanding and sometimes underestimated problem in gallium nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN-based transistors is practically the same problem faced by the inventors of the silicon (Si) field effect transistors more than half a century ago. Although in Si this problem was eventually solved by oxygen and hydrogen-based passivation, in GaN, such breakthrough has yet to be made. Apparently, some of this surface charge originates in molecules adsorbed on its surface. Here, it is shown that the charge density associated with the GaN yellow band desorbs upon mild heat treatment in vacuum and re-adsorbs on exposure to the air. Selective exposure of GaN to nitrogen dioxide (NO2) reproduces this surface charge to its original distribution, as does exposure to air. Residual gas analysis of the gases desorbed during heat treatment shows a large concentration of nitric oxide (NO). These observations suggest that selective adsorption of NO2 is responsible for the surface charge that deleteriously affects the electrical properties of GaN. The physics and chemistry of this NO2 adsorption, reported here, may open a new path in the search for passivation to improve GaN device reliability.

High-sensitivity NO2 fluorescence sensor based on a QDs@Aerogels/SM composite nanofilm

Quantum dots (QDs) exhibit excellent optical and chemical properties, making them advantageous for fluorescence sensing. However, gas sensor using QDs is often hampered by challenges such as gas diffusion and low concentration. This work describes the development of a nitrogen dioxide (NO2) fluorescence gas sensor that utilizes a QDs@Aerogels/SM composite nanofilm containing CdTe QDs modified by reduced glutathione (GSH), silica microspheres (SMs), and silica aerogel. The SM and porous aerogels create a uniform porous structure that enhances the distribution of QDs. Compared to the pure QDs film, the QDs@Aerogels/SM composite film exhibits enhanced fluorescence intensity. The porous structure promotes the adsorption of NO2, which improves the detection sensitivity. The QDs@Aerogels/SM composite film was applied in a portable gas sensor. The sensor demonstrates a good linear response to NO2 gas in the range of 0-10 ppm, with an ultra-low detection limit of 0.096 ppm and high selectivity. The uniform distribution of aerogel and SM enhances the stability of the composite nanofilm, and the fluorescence of the films remains virtually unchanged over a period of 60 days which ensures its optimal performance over extended periods of use. The fluorescent NO2 sensor demonstrated selective and sensitive quenching upon exposure to NO2, making it ideal for environmental monitoring and further applications.

CuO nanostructure-decorated InGaN nanorods for selective H2S gas detection

Establishing a heterostructure is one of the adequate strategies for enhancing device performance and has been explored in sensing, and energy applications. In this study, we constructed a heterostructure through a two-step process involving hydrothermal synthesis of CuO nanostructures and subsequent spin coating on MBE-grown InGaN NRs. We found that the CuO content on the InGaN NRs has a great impact on carrier injection at the heterojunction and thus the H2S gas sensing performance. Popcorn CuO/InGaN NR shows excellent gas sensing performance towards different concentrations of H2S at room temperature. The highest response is up to 35.54% to a H2S concentration of 100 ppm. Even more significantly, this response is further enhanced significantly (123.70%) under 365 nm UV light. In contrast, this composite structure exhibits negligibly low responses to 100 ppm of NO2, H2, CO, and NH3. The heterostructure band model associated with a surface reaction model is manifested to elucidate the sensing mechanism.

Effects of Visible Light on Gas Sensors: From Inorganic Resistors to Molecular Material-Based Heterojunctions

In the last two decades, many research works have been focused on enhancing the properties of gas sensors by utilising external triggers like temperature and light. Most interestingly, the light-activated gas sensors show promising results, particularly using visible light as an external trigger that lowers the power consumption as well as improves the stability, sensitivity and safety of the sensors. It effectively eliminates the possible damage to sensing material caused by high operating temperature or high energy light. This review summarises the effect of visible light illumination on both chemoresistors and heterostructure gas sensors based on inorganic and organic materials and provides a clear understanding of the involved phenomena. Finally, the fascinating concept of ambipolar gas sensors is presented, which utilised visible light as an external trigger for inversion in the nature of majority charge carriers in devices. This review should offer insight into the current technologies and offer a new perspective towards future development utilising visible light in light-assisted gas sensors.

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO₂ films to realize textured Si-based heterojunction photodetectors. The obtained SnO₂/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO₂/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm²) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO₂/T-Si can serve as a high-performance broadband photodetector.

Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

Oxygen vacancy (V_O) is a kind of primary point defect that extensively exists in semiconductor metal oxides (SMOs). Owing to some of its inherent qualities, an artificial manipulation of V_O content in one material has evolved into a hot research field, which is deemed to be capable of modulating band structures and surface characteristics of SMOs. Specific to the gas-sensing area, V_O engineering of sensing materials has become an effective means in enhancing sensor response and inducing light-enhanced sensing. In this work, a high-efficiency microwave hydrothermal treatment was utilized to prepare a V_O-rich ZnO sample without additional reagents. The X-ray photoelectron spectroscopy test revealed a significant increase in V_O proportion, which was from 9.21% in commercial ZnO to 36.27% in synthesized V_O-rich ZnO possessing three-dimensional and air-permeable microstructures. The subsequent UV-vis-NIR absorption and photoluminescence spectroscopy indicated an extension absorption in the visible region and band gap reduction of V_O-rich ZnO. It turned out that the V_O-rich ZnO-based sensor exhibited a considerable response of 63% toward 1 ppm HCHO at room temperature (RT, 25 °C) under visible light irradiation. Particularly, the response/recovery time was only 32/20 s for 1 ppm HCHO and further shortened to 10/5 s for 10 ppm HCHO, which was an excellent performance and comparable to most sensors working at high temperatures. The results in this work strongly suggested the availability of V_O engineering and also provided a meaningful candidate for researchers to develop high-performance RT sensors detecting volatile organic compounds.