1
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Han R, Xue X, Li P. Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping. Phys Chem Chem Phys 2024; 26:12219-12230. [PMID: 38592675 DOI: 10.1039/d4cp00855c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Two-dimensional (2D) intrinsic van der Waals ferromagnetic semiconductor (FMS) crystals with strong perpendicular magnetic anisotropy and high Curie temperature (TC) are highly desirable and hold great promise for applications in ultrahigh-speed spintronic devices. Here, we systematically investigated the effects of a biaxial strain ranging between -8% and +8% and doping with different charge carrier concentrations (≤0.7 electrons/holes per unit cell) on the electronic structure, magnetic properties, and TC of monolayer CrSeBr by combining first-principles calculations and Monte Carlo (MC) simulations. Our results demonstrate that the pristine CrSeBr monolayer possesses an intrinsic FMS character with a band gap as large as 1.03 eV, an in-plane magnetic anisotropy of 0.131 meV per unit cell, and a TC as high as 164 K. At a biaxial strain of only 0.8% and a hole density of 5.31 × 1013 cm-2, the easy magnetization axis direction transitions from in-plane to out-of-plane. More interestingly, the magnetic anisotropy energy and TC of monolayer CrSeBr are further enhanced to 1.882 meV per unit cell and 279 K, respectively, under application of a tensile biaxial strain of 8%, and the monolayer retains its semiconducting properties throughout the entire range of investigated strains. It was also found that upon doping monolayer CrSeBr with holes with a concentration of 0.7 holes per unit cell, the perpendicular magnetic anisotropy and TC are increased to 0.756 meV per cell and 235 K, respectively, and the system tends to become metallic. These findings will help to advance the application of 2D intrinsic ferromagnetic materials in spintronic devices.
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Affiliation(s)
- Ruilin Han
- School of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China.
| | - Xiaomin Xue
- Institute of Theoretical Physics, Shanxi University, Taiyuan, 030006, China
| | - Peng Li
- School of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China.
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2
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Coelho PM. Magnetic doping in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:203001. [PMID: 38324890 DOI: 10.1088/1361-648x/ad271b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 02/07/2024] [Indexed: 02/09/2024]
Abstract
Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.
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Affiliation(s)
- Paula Mariel Coelho
- Department of Physics, University of North Florida, Jacksonville, FL, United States of America
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3
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Wu H, Yang L, Zhang G, Jin W, Xiao B, Zhang W, Chang H. Robust Magnetic Proximity Induced Anomalous Hall Effect in a Room Temperature van der Waals Ferromagnetic Semiconductor Based 2D Heterostructure. SMALL METHODS 2024:e2301524. [PMID: 38295050 DOI: 10.1002/smtd.202301524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 01/04/2024] [Indexed: 02/02/2024]
Abstract
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5 Ga1.5 Se4 (FCGS), is reported with a Curie temperature (TC ) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g-1 , respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity-induced AHE remains robust even up to 400 K.
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Affiliation(s)
- Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Wen Jin
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Bichen Xiao
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Wenfeng Zhang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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4
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Gao Z, Xin B, Chen J, Liu Z, Yao R, Ai W, He Y, Xu L, Cheng TH, Wang WH, Luo F. Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets. ACS NANO 2024; 18:703-712. [PMID: 38133597 DOI: 10.1021/acsnano.3c08998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (Tc) are still rarely reported, which greatly hinders their research progress and practical applications. Herein, ultrathin Cu-doped Cr7Te8 FMs were successfully prepared and can achieve above-room-temperature ferromagnetism with perpendicular magnetic anisotropy via a facile chemical vapor deposition (CVD) method, which can be controlled down to an atomic thin layer of ∼3.4 nm. STEM-EDX quantitative analysis shows that the proportion of Cu to metal atoms is ∼5%. Moreover, based on the anomalous Hall effect (AHE) measurements in a six-terminal Hall bar device without any encapsulation as well as an out-of-plane magnetic field, the maximum Tc achieved ∼315 K when the thickness of the sample is ∼28.8 nm; even the ultrathin 7.6 nm sample possessed a near-room-temperature Tc of ∼275 K. Meanwhile, theoretical calculations elucidated the mechanism of the ferromagnetic enhancement of Cu-doped Cr7Te8 nanosheets. More importantly, the ferromagnetism of CVD-synthesized Cu-doped CrSe nanosheets can also be maintained above room temperature. Our work broadens the scope on room-temperature ferromagnets and their heterojunctions, promoting fundamental research and practical applications in next-generation spintronics.
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Affiliation(s)
- Zhansheng Gao
- Center for the Physics of Low-Dimensional Materials, Henan Joint International Research Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Baojuan Xin
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Jiabiao Chen
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Zhaochao Liu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Rui Yao
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Wei Ai
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Yuyu He
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Lingyun Xu
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Tong-Huai Cheng
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, College of Electronic Information and Optical Engineering and Engineering Research Center of Thin Film Optoelectronics Technology (MOE), Nankai University, Tianjin 300350, China
| | - Feng Luo
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China
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5
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Li Y, Wang K, Wang Y, Qian Z, Huang W, Wang J, Yang Q, Wang H, Liao J, Hussain S, Xie L, Qi J. Synthesis of component-controllable monolayer Mo xW (1-x)S 2ySe 2(1-y) alloys with continuously tunable band gap and carrier type. RSC Adv 2023; 13:34464-34474. [PMID: 38024984 PMCID: PMC10667966 DOI: 10.1039/d3ra07065d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 11/17/2023] [Indexed: 12/01/2023] Open
Abstract
Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1-x)S2ySe2(1-y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.
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Affiliation(s)
- You Li
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yiwen Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Wenbin Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Junqi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Qichao Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
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6
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Fang M, Yang EH. Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103701. [PMID: 37241328 DOI: 10.3390/ma16103701] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/14/2023] [Accepted: 05/10/2023] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.
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Affiliation(s)
- Mengqi Fang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
| | - Eui-Hyeok Yang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
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7
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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8
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Shen D, Zhao B, Zhang Z, Zhang H, Yang X, Huang Z, Li B, Song R, Jin Y, Wu R, Li B, Li J, Duan X. Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2. ACS NANO 2022; 16:10623-10631. [PMID: 35735791 DOI: 10.1021/acsnano.2c02214] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.
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Affiliation(s)
- Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
- School of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Yejun Jin
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bo Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
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9
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Zhang S, Wu H, Yang L, Zhang G, Xie Y, Zhang L, Zhang W, Chang H. Two-dimensional magnetic atomic crystals. MATERIALS HORIZONS 2022; 9:559-576. [PMID: 34779810 DOI: 10.1039/d1mh01155c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) magnetic crystals show many fascinating physical properties and have potential device applications in many fields. In this paper, the preparation, physical properties and device applications of 2D magnetic atomic crystals are reviewed. First, three preparation methods are presented, including chemical vapor deposition (CVD) molecular beam epitaxy (MBE) and single-crystal exfoliation. Second, physical properties of 2D magnetic atomic crystals, including ferromagnetism, antiferromagnetism, magnetic regulation and anomalous Hall effect are presented. Third, the application of 2D magnetic atomic crystals in heterojunctions reluctance and other aspects are briefly introduced. Finally, the future development direction and possible challenges of 2D magnetic atomic crystals are briefly addressed.
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Affiliation(s)
- Shanfei Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Hao Wu
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Gaojie Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yuanmiao Xie
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Liang Zhang
- School of Microelectronics and Materials Engineering and School of Science, Guangxi University of Science and Technology, Liuzhou, China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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10
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Zhou R, Wu J, Chen Y, Xie L. Polymorph Structures, Rich Physical Properties and Potential Applications of
Two‐Dimensional MoTe
2
,
WTe
2
and Its Alloys. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202100777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Rui Zhou
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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11
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Di B, Zhang P, Yin H, Han P, Wu H, Zhang G, Jin W, Wen X, Zhang W, Chang H. Highly-tunable ferromagnetism in Cr-doped layered van der Waals NiTe 2 crystals with high air stability. CrystEngComm 2022. [DOI: 10.1039/d2ce00734g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.
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Affiliation(s)
- Boyuan Di
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Pengzhen Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hongfei Yin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peng Han
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hao Wu
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gaojie Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wen Jin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaokun Wen
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenfeng Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haixin Chang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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