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Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. MATERIALS HORIZONS 2024; 11:2355-2371. [PMID: 38477152 PMCID: PMC11104485 DOI: 10.1039/d4mh00153b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.
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Affiliation(s)
- Ampattu R Jayakrishnan
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Ji S Kim
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Markus Hellenbrand
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Luís S Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
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Wang Z, Guan Z, Wang H, Zhou X, Li J, Shen S, Yin Y, Li X. Pure ZrO 2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22122-22130. [PMID: 38626418 DOI: 10.1021/acsami.4c01234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the information storage and processing performances of ferroelectric ZrO2-based nonvolatile devices remain open for further exploration. Here, a ZrO2 (∼8 nm)-based ferroelectric capacitor using RuO2 oxide electrodes is fabricated, and the ferroelectric orthorhombic phase evolution under electric field cycling is studied. A ferroelectric remnant polarization (2Pr) of >30 μC/cm2, leakage current density of ∼2.79 × 10-8 A/cm2 at 1 MV/cm, and estimated polarization retention of >10 years are achieved. When the ferroelectric capacitor is connected with a transistor, a memory window of ∼0.8 V and eight distinct states can be obtained in such a ferroelectric field-effect transistor (FeFET). Through the conductance manipulation of the FeFET, a high object image recognition accuracy of ∼93.32% is achieved on the basis of the CIFAR-10 dataset in the convolutional neural network (CNN) simulation, which is close to the result of ∼94.20% obtained by floating-point-based CNN software. These results demonstrate the potential of ferroelectric ZrO2 devices for nonvolatile memory and artificial neural network computing.
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Affiliation(s)
- Zijian Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zeyu Guan
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - He Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiang Zhou
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jiachen Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shengchun Shen
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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Crema APS, Istrate MC, Silva A, Lenzi V, Domingues L, Hill MO, Teodorescu VS, Ghica C, Gomes MJM, Pereira M, Marques L, MacManus-Driscoll JL, Silva JPB. Ferroelectric Orthorhombic ZrO 2 Thin Films Achieved Through Nanosecond Laser Annealing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207390. [PMID: 36950722 DOI: 10.1002/advs.202207390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 02/22/2023] [Indexed: 05/27/2023]
Abstract
A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiOx /W(14 nm)/ZrO2 (8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm-2 , remnant polarization of 12.7 µC cm-2 and coercive field of 1.2 MV cm-1 . The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 105 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.
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Affiliation(s)
- Anna P S Crema
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Marian C Istrate
- University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Alexandre Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Veniero Lenzi
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Leonardo Domingues
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Megan O Hill
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom
| | - Valentin S Teodorescu
- University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Corneliu Ghica
- National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania
| | - Maria J M Gomes
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Mario Pereira
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Luís Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal
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Liao J, Dai S, Peng RC, Yang J, Zeng B, Liao M, Zhou Y. HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review. FUNDAMENTAL RESEARCH 2023. [DOI: 10.1016/j.fmre.2023.02.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
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Ali F, Abbas A, Wu G, Daaim M, Akhtar A, Kim KH, Yang B. Novel Fluorite-Structured Materials for Solid-State Refrigeration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200133. [PMID: 35445535 DOI: 10.1002/smll.202200133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Revised: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite-based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field-effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite-based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal-oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite-based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2 - and HfO2 -based materials (e.g., relative to conventional perovskite- and polymer-based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.
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Affiliation(s)
- Faizan Ali
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Akmal Abbas
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Guoyi Wu
- Institute of Earthquake Engineering, Faculty of Infrastructure Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
| | - Muhammad Daaim
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Awais Akhtar
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Ki-Hyun Kim
- Department of Civil and Environmental Engineering, Hanyang University, 222 Wangsimni-Ro, Seoul, 04763, Republic of Korea
| | - Boxiong Yang
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
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