Dry-Etchable Molecular Layer-Deposited Inhibitor Using Annealed Indicone Film for Nanoscale Area-Selective Deposition

Graphitization of tincone via molecular layer deposition: investigating sulfur's role and structural impacts

This study investigated the synthesis of sp2 carbons using molecular layer deposition (MLD) with tincone, which utilized tetrakis(dimethylamido)tin (TDMASn) as the metal precursor and 4-mercaptophenol (4MP) as the organic linker. Tincone films were deposited at 100 °C without impurities and then subjected to vacuum post-annealing in a tube furnace to induce graphitization. Compositional and structural analyses revealed significant changes as the annealing temperature increased, including the breakdown of the bonds between Sn, O, S, and C. This process led to the reduction of Sn, O, and S and the formation of sp2 carbons. At 400 °C, the film thickness was reduced by 57.5%, and the refractive index increased from 1.8 to 1.97, as confirmed by the emergence of G-band and 2D-band peaks in the Raman spectra. X-ray photoelectron spectroscopy analysis indicated that the residual Sn content decreased to 0.75% at 600 °C. Interestingly, at temperatures above 400 °C, unique behavior was observed: increased C-S bonding disrupted the graphite structure due to the thiol (-SH) groups in 4MP. This disruption led to a reduction in C-C bonding and a decrease in the G-band peak in the Raman spectra. This study provides the first detailed investigation of the role of S in the graphitization of tincone, highlighting its impact on sp2 carbon formation and emphasizing the importance of the careful selection of precursors and linkers in MLD processes.

In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic-Organic Hybrid Thin Films for EUV Resist Platform

The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic-organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150-200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. This study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.

Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications

Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

The combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a state-of-the-art synthesis route for new metal-organic thin-film materials with a multitude of properties by combining those of the inorganic...