1
|
Meng G, She J, Yu H, Li Q, Liu X, Yin Z, Cheng Y. Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS 2 Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10316-10324. [PMID: 38381062 DOI: 10.1021/acsami.3c15533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS2 as the channel and a 10.2 nm thick Al:HfO2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 1011 Jones per nanometer of gating layer (Jones nm-1) and photocurrent on/off ratio >104 nm-1, which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.
Collapse
Affiliation(s)
- Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Junyi She
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Yu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qiang Li
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xin Liu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| |
Collapse
|
2
|
Zhao X, Wang X, Jia R, Lin Y, Guo T, Wu L, Hu X, Zhao T, Yan D, Zhu L, Chen Z, Xu X, Chen X, Song X. High-sensitivity hybrid MoSe 2/AgInGaS quantum dot heterojunction photodetector. RSC Adv 2024; 14:1962-1969. [PMID: 38196903 PMCID: PMC10774710 DOI: 10.1039/d3ra07240a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/04/2024] [Indexed: 01/11/2024] Open
Abstract
Zero-dimensional (0D)-two-dimensional (2D) hybrid photodetectors have received widespread attention due to their outstanding photoelectric performances. However, these devices with high performances mainly employ quantum dots that contain toxic elements as sensitizing layers, which restricts their practical applications. In this work, we used eco-friendly AgInGaS quantum dots (AIGS-QDs) as a highly light-absorbing layer and molybdenum diselenide (MoSe2) as a charge transfer layer to construct a 0D-2D hybrid photodetector. Notably, we observed that MoSe2 strongly quenches the photoluminescence (PL) of AIGS-QDs and decreases the decay time of PL in the MoSe2/AIGS-QDs heterojunction. The MoSe2/AIGS-QDs hybrid photodetector demonstrates a responsivity of 14.3 A W-1 and a high detectivity of 6.4 × 1011 Jones. Moreover, the detectivity of the hybrid phototransistor is significantly enhanced by more than three times compared with that of the MoSe2 photodetector. Our work suggests that 0D-2D hybrid photodetectors with multiplex I-III-VI QDs provide promising potential for future high-sensitivity photodetectors.
Collapse
Affiliation(s)
- Xunjia Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Runmeng Jia
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Yuhai Lin
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - TingTing Guo
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Linxiang Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xudong Hu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Tong Zhao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Danni Yan
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Lin Zhu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Zhanyang Chen
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xinsen Xu
- Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd Weihai 265222 China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| | - Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology Nanjing 210094 China
| |
Collapse
|
3
|
Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
Collapse
Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| |
Collapse
|
4
|
Bhattacharya D, Mukherjee S, Mitra RK, Ray SK. TMDC ternary alloy-based triboelectric nanogenerators with giant photo-induced enhancement. NANOSCALE 2023; 15:17398-17408. [PMID: 37796034 DOI: 10.1039/d3nr02791k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
Multifunctional self-powered energy harvesting devices have attracted significant attention for wearable, portable, IoT and healthcare devices. In this study, we report transition metal dichalcogenide (TMDC) ternary alloy (Mo0.5W0.5S2)-based self-powered photosensitive vertical triboelectric nanogenerator (TENG) devices, where the ternary alloy functions both as a triboelectric layer and as a photoabsorbing material. The scalable synthesis of the highly crystalline Mo0.5W0.5S2 ternary alloy can overcome the limitations of binary TMDCs (MoS2, WS2) by utilizing its superior optical characteristics, enabling this semiconductor-based TENG device to simultaneously exhibit photoelectric and triboelectric properties. Benefiting from visible light absorption, this vertical TENG device generates higher triboelectric outputs and exhibits excellent power harvesting properties under visible light illumination. The open circuit voltage and short circuit currents of the devices under illumination (410 nm, 525 μW cm-2) are enhanced by 62% and 253%, respectively, while in the darkness, a very high photoresponsivity of ∼45.5 V mW-1 (voltage mode) is exhibited, indicating the superior energy harvesting potential under ultralow illumination. Furthermore, the energy harvesting ability from regular human activities and the operation as artificial e-skin expands the multi-functionality of this TENG device, paving a pathway for simultaneous mechanical and photonic energy harvesting with self-powered sensing.
Collapse
Affiliation(s)
- Didhiti Bhattacharya
- S. N. Bose National Centre for Basic Science, Sector III, Block JD, Salt Lake, Kolkata - 700106, India
| | - Shubhrasish Mukherjee
- S. N. Bose National Centre for Basic Science, Sector III, Block JD, Salt Lake, Kolkata - 700106, India
| | - Rajib Kumar Mitra
- S. N. Bose National Centre for Basic Science, Sector III, Block JD, Salt Lake, Kolkata - 700106, India
| | - Samit Kumar Ray
- S. N. Bose National Centre for Basic Science, Sector III, Block JD, Salt Lake, Kolkata - 700106, India
- Indian Institute of Technology Kharagpur, 721302, India.
| |
Collapse
|
5
|
Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
Collapse
Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
| |
Collapse
|
6
|
Moulick S, Alam R, Pal AN. Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51105-51112. [PMID: 36323003 DOI: 10.1021/acsami.2c14499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The substrate plays a crucial role in determining the transport and low-frequency noise behavior of graphene field-effect devices. Typically, a heavily doped Si/SiO2 substrate is used to fabricate these devices for efficient gating. Trapping-detrapping processes close to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuations arising due to any remote charge fluctuations inside the bulk of the substrate are effectively screened by the heavily doped substrate. Here, we present the electronic transport and low-frequency noise characteristics of a large-area CVD graphene field-effect transistor (FET) prepared on a lightly doped Si/SiO2 substrate (NA ≈ 1015 cm-3). Through a systematic characterization of transport, noise, and capacitance at various temperatures, we reveal that the remote Si/SiO2 interface can affect the charge transport in graphene severely and any charge fluctuations inside the bulk of the silicon substrate can be sensed by the graphene channel. The resistance (R) vs back-gate voltage (Vbg) characteristics of the device show a hump around the depletion region formed at the SiO2/Si interface, confirmed by the capacitance (C)-voltage (V) measurement. A low-frequency noise measurement on these fabricated devices shows a peak in the noise amplitude close to the depletion region. This indicates that due to the absence of any charge layer at the Si/SiO2 interface, the screening ability decreases, and as a consequence, any fluctuations in the deep-level Coulomb impurities inside the silicon substrate can be observed as noise in resistance in the graphene channel via mobility fluctuations. The noise behavior on ionic liquid-gated graphene on the same substrate exhibits no such peak in noise and can be explained by the interfacial trapping-detrapping processes close to the graphene channel. Our study will definitely be useful for integrating graphene with the existing silicon technology, in particular, for high-frequency applications.
Collapse
Affiliation(s)
- Shubhadip Moulick
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
| | - Rafiqul Alam
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
| | - Atindra Nath Pal
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
| |
Collapse
|
7
|
Li X, Ruan S, Zhu H. SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2777. [PMID: 36014642 PMCID: PMC9413584 DOI: 10.3390/nano12162777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 08/04/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.
Collapse
Affiliation(s)
- Xiangyang Li
- College of Applied Technology, Shenzhen University, Shenzhen 518060, China
| | - Shuangchen Ruan
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| | - Haiou Zhu
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| |
Collapse
|
8
|
Mukherjee S, Bhattacharya D, Ray SK, Pal AN. High-Performance Broad-Band Photodetection Based on Graphene-MoS 2xSe 2(1-x) Alloy Engineered Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34875-34883. [PMID: 35880297 DOI: 10.1021/acsami.2c08933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS2xSe2(1-x) (x = 0 - 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene-MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>104 A/W), low noise equivalent power (∼10-14 W/Hz0.5), and higher specific detectivity (∼1011 jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS2xSe2(1-x) alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.
Collapse
Affiliation(s)
- Shubhrasish Mukherjee
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Didhiti Bhattacharya
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Samit Kumar Ray
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
- Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India
| | - Atindra Nath Pal
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| |
Collapse
|